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ATP213-TL-H MOSFET N-Channel 60V 50A Equivalent & Substitute Parts
Part Overview
The ATP213-TL-H is an N-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with 50A continuous drain current in surface mount ATPAK packaging. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The part delivers 50W maximum power dissipation and operates at junction temperatures up to 150°C, serving applications requiring moderate-to-high current switching in compact form factors.
Substiute Parts
Key Parameters
| Parameter | ATP213-TL-H |
|---|---|
| Manufacturer | onsemi |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (Vdss) | 60 V |
| Continuous Drain Current (Id) @ 25°C | 50A (Ta) |
| Rds On (Max) @ Id, Vgs | 16 mOhm @ 25A, 10V |
| Gate Charge (Qg) @ Vgs | 58 nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) @ Vds | 3150 pF @ 20V |
| Power Dissipation (Max) | 50W (Tc) |
| Operating Temperature (TJ) | 150°C |
| Mounting Type | Surface Mount |
| Package / Case | ATPAK (2 Leads + Tab) |
| Product Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Substitute Part Grouping Explanation
Substitution of the ATP213-TL-H is determined by the following critical electrical and mechanical parameters:
Primary Substitution Criteria:
- Drain-to-Source Voltage (Vdss): Must equal or exceed 60V
- Continuous Drain Current (Id): Must equal or exceed 50A at rated conditions
- FET Type: N-Channel MOSFET technology
- Mounting Type: Surface Mount
- On-Resistance (Rds On): Lower values indicate improved performance; values within 16 mOhm or better are preferred
- Gate Charge (Qg): Lower values reduce switching losses; 58 nC or lower is acceptable
- Maximum Gate Voltage (Vgs): Must accommodate ±20V or greater
- Input Capacitance (Ciss): Lower values improve switching speed; 3150 pF or lower is acceptable
Secondary Considerations:
- Package compatibility: ATPAK, DPAK, and TO-252-3 packages are mechanically compatible for most applications
- Power Dissipation: 50W or greater capability maintains thermal performance
- Operating Temperature Range: Extended range (-55°C to 175°C) provides design margin over the 150°C maximum of the main part
- Product Status: Active status ensures long-term availability and supply chain stability
The substitute parts listed below meet or exceed the electrical specifications of the ATP213-TL-H while offering improved or equivalent performance characteristics.
Parameter Comparison
| Parameter | ATP213-TL-H (onsemi) | STD35NF06LT4 (STMicroelectronics) | IPD50N06S4L12ATMA2 (Infineon) | IRFR2905ZTRPBF (Infineon) |
|---|---|---|---|---|
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (Vdss) | 60 V | 60 V | 60 V | 55 V |
| Continuous Drain Current (Id) @ 25°C | 50A (Ta) | 35A (Tc) | 50A (Tc) | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 16 mOhm @ 25A, 10V | 17 mOhm @ 17.5A, 10V | 12 mOhm @ 50A, 10V | 14.5 mOhm @ 36A, 10V |
| Gate Charge (Qg) @ Vgs | 58 nC @ 10V | 33 nC @ 4.5V | 40 nC @ 10V | 44 nC @ 10V |
| Vgs (Max) | ±20V | ±16V | ±16V | ±20V |
| Input Capacitance (Ciss) @ Vds | 3150 pF @ 20V | 1700 pF @ 25V | 2890 pF @ 25V | 1380 pF @ 25V |
| Power Dissipation (Max) | 50W (Tc) | 80W (Tc) | 50W (Tc) | 110W (Tc) |
| Operating Temperature (TJ) | 150°C | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | ATPAK (2 Leads + Tab) | TO-252-3, DPAK (2 Leads + Tab) | TO-252-3, DPAK (2 Leads + Tab) | TO-252-3, DPAK (2 Leads + Tab) |
| Product Status | Obsolete | Active | Active | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
| RoHS Status | Not specified | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| REACH Status | REACH Unaffected | REACH Unaffected | REACH Unaffected | REACH Unaffected |
Engineering Selection Recommendations
IPD50N06S4L12ATMA2 (Infineon Technologies)
The IPD50N06S4L12ATMA2 provides the closest electrical match to the ATP213-TL-H. This part maintains the 60V Vdss rating and 50A continuous drain current specification, delivering superior on-resistance performance at 12 mOhm compared to the original 16 mOhm. The device is AEC-Q101 qualified for automotive applications and carries active product status, ensuring long-term availability. ROHS3 compliance and extended operating temperature range (-55°C to 175°C) provide design margin. The TO-252-3 DPAK package is mechanically compatible with standard PCB layouts. Gate charge of 40 nC and input capacitance of 2890 pF remain within acceptable switching performance parameters.
IRFR2905ZTRPBF (Infineon Technologies)
The IRFR2905ZTRPBF operates at 55V Vdss, which is 5V below the ATP213-TL-H specification. This part delivers 42A continuous drain current, below the 50A requirement. However, the device offers superior on-resistance at 14.5 mOhm and significantly lower input capacitance at 1380 pF, enabling faster switching characteristics. Power dissipation capability of 110W exceeds the original specification. Active product status and ROHS3 compliance support long-term procurement. This substitute is suitable for applications where the 55V rating and 42A current are within design margins.
STD35NF06LT4 (STMicroelectronics)
The STD35NF06LT4 maintains the 60V Vdss rating but provides only 35A continuous drain current, representing a 30% reduction from the ATP213-TL-H specification. On-resistance of 17 mOhm is comparable to the original part. Gate charge of 33 nC is significantly lower, improving switching efficiency. Power dissipation of 80W exceeds the original specification. Active product status and ROHS3 compliance ensure availability. This substitute is applicable only to designs where 35A current capacity is sufficient.
Selection Basis:
- Primary Choice: IPD50N06S4L12ATMA2 for full electrical equivalence with improved performance and automotive qualification
- Alternative Choice: IRFR2905ZTRPBF for applications tolerating 55V operation and 42A current with enhanced switching speed
- Limited Scope: STD35NF06LT4 for designs requiring only 35A current capacity
All substitute parts are active products with ROHS3 compliance and REACH unaffected status, supporting regulatory requirements and supply chain continuity.
Frequently Asked Questions (FAQ)
Q: Can the STD35NF06LT4 replace the ATP213-TL-H in all applications?
A: No. The STD35NF06LT4 is rated for 35A continuous drain current, while the ATP213-TL-H is rated for 50A. This substitute is suitable only for applications where the design current requirement does not exceed 35A. The 60V Vdss rating is equivalent.
Q: What is the primary advantage of the IPD50N06S4L12ATMA2 over the ATP213-TL-H?
A: The IPD50N06S4L12ATMA2 provides superior on-resistance performance at 12 mOhm compared to 16 mOhm, reducing conduction losses. It maintains identical voltage and current ratings while offering active product status and AEC-Q101 automotive qualification. Extended operating temperature range (-55°C to 175°C) provides additional design margin.
Q: Is the IRFR2905ZTRPBF a direct replacement for the ATP213-TL-H?
A: The IRFR2905ZTRPBF is not a direct replacement due to reduced voltage and current ratings (55V Vdss and 42A Id versus 60V and 50A). However, it is suitable for applications where these reduced ratings are within design margins. The part offers superior switching characteristics with lower input capacitance and gate charge.
Q: Are all substitute parts compatible with the original ATPAK package footprint?
A: No. The ATP213-TL-H uses ATPAK packaging, while all substitute parts use TO-252-3 DPAK packaging. Although both are surface mount packages with 2 leads plus tab, the physical footprints differ. PCB layout modifications are required for package substitution.
Q: What is the significance of the lower gate charge in the STD35NF06LT4?
A: Lower gate charge (33 nC versus 58 nC) reduces the energy required to switch the device on and off, resulting in lower switching losses and improved efficiency. This is particularly beneficial in high-frequency switching applications.
Q: Do all substitute parts meet ROHS3 compliance?
A: Yes. The IPD50N06S4L12ATMA2, IRFR2905ZTRPBF, and STD35NF06LT4 are all ROHS3 compliant. The ATP213-TL-H compliance status is not specified in the provided data.
Q: What does AEC-Q101 qualification mean for the IPD50N06S4L12ATMA2?
A: AEC-Q101 is an automotive qualification standard that certifies the device for use in automotive applications. This qualification indicates the part has undergone rigorous testing for reliability, temperature cycling, and performance consistency under automotive operating conditions.
Q: Can the ATP213-TL-H be used interchangeably with the IPD50N06S4L12ATMA2 in existing designs?
A: Electrical substitution is possible due to matching voltage and current ratings. However, package differences (ATPAK versus DPAK) require PCB layout modifications. Thermal performance may differ due to package design variations, requiring thermal analysis for high-power applications.
Q: Why is the ATP213-TL-H classified as obsolete?
A: Obsolete status indicates the manufacturer has discontinued production and support for this part. Substitute parts with active status ensure ongoing availability, technical support, and supply chain stability for new designs and production continuity.
Q: What is the impact of input capacitance differences on circuit performance?
A: Input capacitance (Ciss) affects gate drive requirements and switching speed. Lower Ciss values (IRFR2905ZTRPBF at 1380 pF) enable faster switching and reduce gate driver power consumption compared to higher values (ATP213-TL-H at 3150 pF). Selection depends on gate driver capability and switching frequency requirements.
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