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ATP207-TL-H Equivalent & Substitute Parts
Part Overview
The ATP207-TL-H is an N-Channel MOSFET manufactured by onsemi, rated for 40V drain-to-source voltage with 65A continuous drain current in ATPAK surface mount packaging. This device is classified as obsolete, necessitating identification of equivalent substitute components for ongoing design support and procurement. The ATP207-TL-H delivers 50W maximum power dissipation and operates at junction temperatures up to 150°C, making it suitable for power switching applications requiring compact form factors.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | N-Channel | — |
| Drain to Source Voltage (Vdss) | 40 | V |
| Continuous Drain Current (Id) @ 25°C | 65 | A (Ta) |
| Rds On (Max) @ Id, Vgs | 9.1 mOhm @ 33A, 10V | — |
| Gate Charge (Qg) @ Vgs | 54 | nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 2710 | pF @ 20V |
| Power Dissipation (Max) | 50 | W (Tc) |
| Operating Temperature (TJ) | 150 | °C |
| Mounting Type | Surface Mount | — |
| Package / Case | ATPAK (2 Leads+Tab) | — |
| Vgs (Max) | ±20 | V |
| Product Status | Obsolete | — |
Substitute Part Grouping Explanation
Substitution of the ATP207-TL-H is determined by strict electrical and mechanical parameter alignment within the N-Channel MOSFET category. The following parameters establish substitution eligibility:
Electrical Compatibility Criteria:
- Drain-to-Source Voltage (Vdss): Must equal or exceed 40V
- Continuous Drain Current (Id): Must meet or exceed 65A rating
- Gate-Source Voltage (Vgs Max): Must support ±20V operation
- On-State Resistance (Rds On): Lower values indicate improved performance but do not disqualify substitutes
Mechanical Compatibility Criteria:
- Mounting Type: Surface Mount required
- Package Form Factor: Physical dimensions and lead configuration must accommodate existing PCB layouts
Compliance Criteria:
- REACH Status: REACH Unaffected designation required
- ECCN Classification: EAR99 classification required
- Moisture Sensitivity Level: MSL 1 (Unlimited) required
The FDD8445 meets all electrical and mechanical substitution criteria while maintaining active product status and full compliance certifications.
Parameter Comparison
| Parameter | ATP207-TL-H | FDD8445 | Unit |
|---|---|---|---|
| Manufacturer | onsemi | onsemi | — |
| FET Type | N-Channel | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | — |
| Drain to Source Voltage (Vdss) | 40 | 40 | V |
| Continuous Drain Current (Id) @ 25°C | 65 (Ta) | 70 (Tc) | A |
| Rds On (Max) @ Id, Vgs | 9.1 mOhm @ 33A, 10V | 8.7 mOhm @ 50A, 10V | — |
| Gate Charge (Qg) @ Vgs | 54 @ 10V | 59 @ 10V | nC |
| Input Capacitance (Ciss) @ Vds | 2710 @ 20V | 4050 @ 25V | pF |
| Vgs (Max) | ±20 | ±20 | V |
| Power Dissipation (Max) | 50 (Tc) | 79 (Tc) | W |
| Operating Temperature (TJ) | 150 | -55 ~ 175 | °C |
| Mounting Type | Surface Mount | Surface Mount | — |
| Package / Case | ATPAK (2 Leads+Tab) | TO-252-3, DPAK (2 Leads + Tab), SC-63 | — |
| Product Status | Obsolete | Active | — |
| REACH Status | REACH Unaffected | REACH Unaffected | — |
| ECCN | EAR99 | EAR99 | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | — |
Engineering Selection Recommendations
The FDD8445 serves as a direct electrical substitute for the ATP207-TL-H based on equivalent voltage and current ratings. Both devices maintain identical Vdss (40V) and Vgs (±20V) specifications, with the FDD8445 providing superior continuous drain current capability (70A versus 65A) and increased power dissipation headroom (79W versus 50W).
Product Status Advantage: The FDD8445 holds active product status with established supply chain availability (30,400 pieces in stock), whereas the ATP207-TL-H is obsolete with limited remaining inventory (1,300 pieces). This distinction is critical for long-term design support and procurement continuity.
Compliance Alignment: Both devices maintain identical REACH Unaffected status, EAR99 ECCN classification, and MSL 1 moisture sensitivity rating, ensuring regulatory and environmental compliance equivalence.
Package Consideration: The FDD8445 utilizes TO-252-3 (DPAK) packaging, which differs from the ATP207-TL-H ATPAK form factor. PCB layout modifications are required to accommodate the different package geometry and lead configuration. Both packages provide two leads plus tab construction suitable for surface mount assembly.
Thermal Performance: The FDD8445 supports extended operating temperature range (-55°C to 175°C) compared to the ATP207-TL-H (up to 150°C), providing additional thermal margin for demanding applications.
Frequently Asked Questions (FAQ)
Q: Can the FDD8445 directly replace the ATP207-TL-H without circuit modifications?
A: Electrical substitution is valid based on matching Vdss, Id, and Vgs specifications. However, package geometry differs (TO-252-3 DPAK versus ATPAK), requiring PCB layout redesign. Gate charge and input capacitance variations may necessitate gate drive circuit evaluation in high-frequency switching applications.
Q: What is the primary reason for substituting the ATP207-TL-H?
A: The ATP207-TL-H is classified as obsolete. The FDD8445 provides equivalent electrical performance with active product status, ensuring long-term availability and supply chain reliability.
Q: Are there thermal performance differences between these devices?
A: The FDD8445 offers higher maximum power dissipation (79W versus 50W) and extended operating temperature range (-55°C to 175°C versus up to 150°C). These characteristics provide additional thermal headroom in power-limited applications.
Q: Do both devices meet the same regulatory requirements?
A: Yes. Both the ATP207-TL-H and FDD8445 maintain REACH Unaffected status, EAR99 ECCN classification, and MSL 1 moisture sensitivity rating, ensuring equivalent compliance posture.
Q: What on-state resistance characteristics should be considered?
A: The FDD8445 exhibits lower Rds On (8.7 mOhm @ 50A, 10V) compared to the ATP207-TL-H (9.1 mOhm @ 33A, 10V). Lower on-state resistance reduces conduction losses and heat generation, improving overall circuit efficiency.
Q: How do gate charge specifications affect circuit design?
A: Gate charge values are comparable (54 nC for ATP207-TL-H versus 59 nC for FDD8445 at 10V). Minor differences do not typically require gate drive circuit redesign in standard switching applications, though high-frequency designs should evaluate switching speed implications.
Q: What packaging considerations apply to this substitution?
A: The ATP207-TL-H uses ATPAK packaging while the FDD8445 uses TO-252-3 (DPAK) packaging. Both are surface mount with two leads plus tab configuration. Physical footprint and lead spacing differ, requiring PCB artwork modification and component placement adjustment.
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