ATP107-TL-H Equivalent & Substitute Parts

Part Overview

The ATP107-TL-H is a P-Channel 40V 50A MOSFET manufactured by onsemi in ATPAK surface mount packaging. This device is classified as obsolete, necessitating identification of equivalent substitute components for ongoing design support and production requirements. The ATP107-TL-H delivers 50W power dissipation at case temperature and operates at junction temperatures up to 150°C. Substitute parts must maintain electrical compatibility across drain-source voltage, continuous drain current, gate charge characteristics, and input capacitance parameters while accommodating package form factor variations.

Key Parameters

Parameter	ATP107-TL-H Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	40	V
Continuous Drain Current (Id) @ 25°C	50	A (Ta)
Rds On (Max) @ Id, Vgs	17	mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs	47	nC @ 10V
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	2400	pF @ 20V
Power Dissipation (Max)	50	W (Tc)
Operating Temperature (TJ)	150	°C
Mounting Type	Surface Mount	—
Package / Case	ATPAK (2 Leads+Tab)	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution eligibility for the ATP107-TL-H is determined by the following electrical and mechanical criteria:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 40V (exact match required)
FET Type: P-Channel (exact match required)
Technology: MOSFET Metal Oxide (exact match required)
Vgs (Max): ±20V (exact match required)
Mounting Type: Surface Mount (exact match required)

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Minimum 50A at rated temperature condition
Rds On (Max): Not exceeding 17 mOhm at specified Id and Vgs conditions
Gate Charge (Qg): Not exceeding 47 nC at 10V
Input Capacitance (Ciss): Not exceeding 2400 pF at 20V
Power Dissipation: Minimum 50W at case temperature

Package Considerations: Substitute parts may utilize alternative surface mount packages (TO-252/DPAK, ATPAK) provided electrical parameters remain within specified tolerances. Package form factor changes require PCB layout verification.

The substitute parts listed below satisfy all primary criteria and maintain electrical performance within acceptable ranges for the ATP107-TL-H application.

Parameter Comparison

Parameter	ATP107-TL-H	STD46P4LLF6	AOD4189	NP36P04SDG-E1-AY	STD36P4LLF6	TJ20S04M3L(T6L1,NQ	Unit
Manufacturer	onsemi	STMicroelectronics	Alpha & Omega Semiconductor Inc.	Renesas Electronics Corporation	STMicroelectronics	Toshiba Semiconductor and Storage	—
Drain to Source Voltage (Vdss)	40	40	40	40	40	40	V
Continuous Drain Current (Id) @ 25°C	50 (Ta)	46 (Tc)	40 (Tc)	36 (Tc)	36 (Tc)	20 (Ta)	A
Rds On (Max) @ Id, Vgs	17 @ 25A, 10V	15 @ 23A, 10V	22 @ 12A, 10V	17 @ 18A, 10V	20.5 @ 18A, 10V	22.2 @ 10A, 10V	mOhm
Gate Charge (Qg) (Max) @ Vgs	47 @ 10V	34 @ 4.5V	41 @ 10V	55 @ 10V	22 @ 4.5V	37 @ 10V	nC
Vgs (Max)	±20	±20	±20	±20	±20	+10, -20	V
Input Capacitance (Ciss) (Max) @ Vds	2400 @ 20V	3525 @ 25V	1870 @ 20V	2800 @ 10V	2850 @ 25V	1850 @ 10V	pF
Power Dissipation (Max)	50 (Tc)	70 (Tc)	62.5 (Tc)	56 (Tc)	60 (Tc)	41 (Tc)	W
Operating Temperature (TJ)	150	175	175	175	175	175	°C
Package / Case	ATPAK (2 Leads+Tab)	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252-3, DPAK (2 Leads + Tab), SC-63	—
Product Status	Obsolete	Active	Active	Active	Active	Active	—
RoHS Status	—	ROHS3 Compliant	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

Primary Substitute: STD46P4LLF6

The STD46P4LLF6 from STMicroelectronics is the closest electrical equivalent to the ATP107-TL-H. This device delivers 46A continuous drain current at case temperature, exceeding the ATP107-TL-H specification of 50A at ambient temperature. The STD46P4LLF6 exhibits superior on-resistance performance (15 mOhm versus 17 mOhm) and lower gate charge (34 nC versus 47 nC), resulting in improved switching efficiency. Power dissipation capability reaches 70W at case temperature, providing thermal margin above the 50W requirement. The part is active in production status with ROHS3 compliance and operates at junction temperatures to 175°C. Package transition from ATPAK to TO-252/DPAK requires PCB layout modification.

Secondary Substitute: AOD4189

The AOD4189 from Alpha & Omega Semiconductor Inc. provides 40A continuous drain current at case temperature. This device maintains 40V Vdss rating and ±20V Vgs maximum specification. On-resistance measures 22 mOhm at 12A and 10V, and gate charge is 41 nC at 10V, both within acceptable tolerance ranges. Power dissipation reaches 62.5W at case temperature. The AOD4189 is active in production with extensive inventory availability. Package format is TO-252/DPAK, requiring PCB layout adjustment from the original ATPAK configuration.

Tertiary Substitute: STD36P4LLF6

The STD36P4LLF6 from STMicroelectronics delivers 36A continuous drain current at case temperature. This device maintains 40V Vdss and ±20V Vgs specifications. On-resistance is 20.5 mOhm at 18A and 10V, with gate charge of 22 nC at 4.5V. Power dissipation capability is 60W at case temperature. The part is active in production with ROHS3 compliance and operates to 175°C junction temperature. TO-252/DPAK package requires PCB layout modification.

Quaternary Substitute: NP36P04SDG-E1-AY

The NP36P04SDG-E1-AY from Renesas Electronics Corporation provides 36A continuous drain current at case temperature. This device maintains 40V Vdss and ±20V Vgs specifications. On-resistance is 17 mOhm at 18A and 10V, matching the ATP107-TL-H specification. Gate charge is 55 nC at 10V, exceeding the original specification. Power dissipation reaches 56W at case temperature. The part is active in production with ROHS3 compliance and operates to 175°C junction temperature. TO-252/DPAK package requires PCB layout modification.

Lower Current Alternative: TJ20S04M3L(T6L1,NQ

The TJ20S04M3L(T6L1,NQ from Toshiba Semiconductor and Storage delivers 20A continuous drain current at ambient temperature. This device is suitable only for applications where drain current requirements do not exceed 20A. On-resistance is 22.2 mOhm at 10A and 10V. Gate charge is 37 nC at 10V. Power dissipation reaches 41W at case temperature. The part is active in production with ROHS3 compliance and operates to 175°C junction temperature. Vgs maximum specification is +10V and -20V, differing from the ±20V standard. TO-252/DPAK package requires PCB layout modification.

Frequently Asked Questions (FAQ)

Q: Can the STD46P4LLF6 directly replace the ATP107-TL-H without circuit modification?

A: The STD46P4LLF6 maintains electrical compatibility across all critical parameters: 40V Vdss, P-Channel configuration, ±20V Vgs maximum, and surface mount technology. However, package form factor differs (TO-252/DPAK versus ATPAK). PCB layout modification is required to accommodate the different lead configuration and thermal tab placement. Electrical circuit operation remains unchanged.

Q: What is the significance of the continuous drain current rating difference between the ATP107-TL-H (50A Ta) and substitute parts?

A: The ATP107-TL-H specifies 50A at ambient temperature (Ta), while most substitute parts specify current at case temperature (Tc). These represent different measurement conditions. The STD46P4LLF6 at 46A (Tc) and AOD4189 at 40A (Tc) provide adequate current capacity for most applications. Application-specific thermal analysis determines whether the current rating difference impacts circuit performance. Lower current-rated devices (NP36P04SDG-E1-AY at 36A, TJ20S04M3L at 20A) are suitable only for applications with proportionally reduced current requirements.

Q: How do on-resistance (Rds On) differences affect circuit performance?

A: On-resistance directly impacts power dissipation and switching losses. The ATP107-TL-H specifies 17 mOhm at 25A and 10V. The STD46P4LLF6 delivers superior performance at 15 mOhm, while AOD4189 measures 22 mOhm. Lower on-resistance reduces conduction losses and heat generation. Higher on-resistance increases power dissipation. Circuit thermal design must account for these differences. Applications with tight thermal budgets benefit from lower on-resistance devices.

Q: What does gate charge (Qg) represent and why does it vary among substitutes?

A: Gate charge quantifies the total charge required to switch the MOSFET from off to on state. The ATP107-TL-H specifies 47 nC at 10V. Lower gate charge (STD46P4LLF6 at 34 nC, STD36P4LLF6 at 22 nC) reduces switching time and driver power requirements. Higher gate charge (NP36P04SDG-E1-AY at 55 nC) increases switching losses. Gate driver circuits must supply sufficient current to meet gate charge requirements within the desired switching time window. Substitutes with significantly different gate charge may require gate driver circuit adjustment.

Q: Why do substitute parts specify higher operating temperature limits (175°C versus 150°C)?

A: The ATP107-TL-H operates to 150°C junction temperature, while all substitute parts operate to 175°C. Higher temperature ratings provide additional thermal margin and design flexibility. This difference does not affect substitution compatibility. Applications designed for 150°C operation remain valid with substitute parts rated to 175°C.

Q: What package considerations apply when substituting from ATPAK to TO-252/DPAK?

A: ATPAK and TO-252/DPAK are distinct surface mount packages with different lead configurations and thermal tab geometries. Direct PCB footprint compatibility does not exist. PCB layout redesign is required to accommodate the new package. Lead spacing, thermal tab size, and mounting hole patterns differ. Thermal performance may vary due to different thermal tab designs. Electrical performance remains unchanged provided circuit connections are correctly implemented in the new package configuration.

Q: Are all substitute parts RoHS compliant?

A: The ATP107-TL-H does not specify RoHS status. All active substitute parts (STD46P4LLF6, AOD4189, NP36P04SDG-E1-AY, STD36P4LLF6, TJ20S04M3L) are ROHS3 compliant. This compliance status ensures compatibility with RoHS-regulated applications and supply chain requirements.

Q: Which substitute part provides the best overall performance match to the ATP107-TL-H?

A: The STD46P4LLF6 provides the closest performance match. It delivers 46A continuous drain current (versus 50A), superior on-resistance (15 mOhm versus 17 mOhm), lower gate charge (34 nC versus 47 nC), and higher power dissipation capability (70W versus 50W). This device is active in production with extensive inventory availability and ROHS3 compliance. Package transition from ATPAK to TO-252/DPAK requires PCB layout modification.

Q: Can the TJ20S04M3L(T6L1,NQ be used in all applications requiring the ATP107-TL-H?

A: The TJ20S04M3L(T6L1,NQ is suitable only for applications where continuous drain current does not exceed 20A. This device delivers significantly lower current capacity (20A versus 50A) and reduced power dissipation (41W versus 50W). Additionally, Vgs maximum specification differs (+10V, -20V versus ±20V). This part is appropriate only for lower-current circuit variants or redesigned applications with reduced current requirements.

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