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AT88SC0404CA-SH-T Equivalent & Substitute Parts
Part Overview
The AT88SC0404CA-SH-T is a Secure Memory IC manufactured by Microchip Technology in the CryptoMemory® series. This 8-SOIC surface mount device provides secure memory functionality for embedded and smart card applications. The part is active and RoHS3 compliant with unlimited moisture sensitivity rating (MSL 1).
Substitute parts are necessary when the original AT88SC0404CA-SH-T is unavailable, when alternative supply chain sources are required, or when design requirements permit functional equivalents with compatible electrical and mechanical parameters. The substitute parts listed below maintain compatibility through matching memory organization, interface protocols, package specifications, and operating characteristics.
Substiute Parts
Key Parameters
| Parameter | AT88SC0404CA-SH-T |
|---|---|
| Manufacturer | Microchip Technology |
| Series | CryptoMemory® |
| Memory Type | Secure Memory |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Memory Organization | 512 x 8 |
| Memory Interface | I2C |
| Operating Temperature | -40°C ~ 85°C (TA) |
| RoHS Status | RoHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Part Status | Active |
Substitute Part Grouping Explanation
Substitution compatibility for the AT88SC0404CA-SH-T is determined by the following critical parameters:
Primary Compatibility Criteria:
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Mounting Type: Surface Mount
- Memory Organization: 512 x 8
- Memory Interface: I2C
- Operating Temperature Range: -40°C ~ 85°C minimum
- RoHS3 Compliance
- MSL Rating: 1 (Unlimited) or equivalent
Secondary Compatibility Factors:
- Memory Size: 4Kbit
- Memory Format: EEPROM or Secure Memory
- Part Status: Active
The substitute parts listed are EEPROM memory ICs that share the same 8-SOIC package, I2C interface, 512 x 8 memory organization, and operating temperature range. While the AT88SC0404CA-SH-T is a secure memory device and the substitutes are standard EEPROM devices, they maintain electrical and mechanical compatibility for applications where secure memory features are not required or where functional equivalence is acceptable.
Parameter Comparison
| Part Number | Manufacturer | Memory Type | Memory Size | Memory Interface | Clock Frequency | Package / Case | Operating Temperature | Voltage Supply | RoHS Status | MSL | Part Status |
|---|---|---|---|---|---|---|---|---|---|---|---|
| AT88SC0404CA-SH-T | Microchip Technology | Secure Memory | 4Kbit | I2C | N/A | 8-SOIC | -40°C ~ 85°C | N/A | RoHS3 | 1 | Active |
| AT24C04D-SSHM-T | Microchip Technology | EEPROM | 4Kbit | I2C | 1 MHz | 8-SOIC | -40°C ~ 85°C | 1.7V ~ 3.6V | RoHS3 | 1 | Active |
| AT24CS04-SSHM-T | Microchip Technology | EEPROM | 4Kbit | I2C | 1 MHz | 8-SOIC | -40°C ~ 85°C | 1.7V ~ 5.5V | RoHS3 | 1 | Active |
| AT24HC04BN-SH-T | Microchip Technology | EEPROM | 4Kbit | I2C | 1 MHz | 8-SOIC | -40°C ~ 85°C | 1.8V ~ 5.5V | RoHS3 | 3 | Active |
| BR24G04FJ-3GTE2 | Rohm Semiconductor | EEPROM | 4Kbit | I2C | 400 kHz | 8-SOIC | -40°C ~ 85°C | 1.6V ~ 5.5V | RoHS3 | 1 | Active |
| BR24T04FJ-WE2 | Rohm Semiconductor | EEPROM | 4Kbit | I2C | 400 kHz | 8-SOIC | -40°C ~ 85°C | 1.6V ~ 5.5V | RoHS3 | 1 | Active |
| CAT24C04WI-GT3 | Catalyst Semiconductor Inc. | EEPROM | 4Kbit | I2C | N/A | N/A | N/A | N/A | N/A | 1 | Active |
| CAV24C04WE-GT3 | onsemi | EEPROM | 4Kbit | I2C | 400 kHz | 8-SOIC | -40°C ~ 125°C | 2.5V ~ 5.5V | RoHS3 | 1 | Active |
| M24C04-DRMN3TP/K | STMicroelectronics | EEPROM | 4Kbit | I2C | 1 MHz | 8-SOIC | -40°C ~ 125°C | 1.7V ~ 5.5V | RoHS3 | 1 | Active |
| M24C04-DRMN8TP/K | STMicroelectronics | EEPROM | 4Kbit | I2C | 1 MHz | 8-SOIC | -40°C ~ 105°C | 1.8V ~ 5.5V | RoHS3 | 1 | Active |
| M24C04-FMN6TP | STMicroelectronics | EEPROM | 4Kbit | I2C | 400 kHz | 8-SOIC | -40°C ~ 85°C | 1.7V ~ 5.5V | RoHS3 | 1 | Active |
Engineering Selection Recommendations
All listed substitute parts are active products with RoHS3 compliance and MSL 1 rating, matching the environmental and regulatory status of the AT88SC0404CA-SH-T. Selection among substitutes should be based on the following factors:
Microchip Technology Substitutes (AT24C04D-SSHM-T, AT24CS04-SSHM-T, AT24HC04BN-SH-T): These parts maintain manufacturer continuity with the original device. AT24C04D-SSHM-T and AT24CS04-SSHM-T both feature 1 MHz clock frequency and MSL 1 rating. AT24HC04BN-SH-T offers extended voltage supply range (1.8V ~ 5.5V) but carries MSL 3 rating.
STMicroelectronics Substitutes (M24C04-DRMN3TP/K, M24C04-DRMN8TP/K, M24C04-FMN6TP): These parts provide automotive-grade qualification (AEC-Q100) with extended operating temperature ranges. M24C04-DRMN3TP/K and M24C04-DRMN8TP/K support 1 MHz operation. M24C04-FMN6TP operates at 400 kHz with verified programmability status.
Rohm Semiconductor Substitutes (BR24G04FJ-3GTE2, BR24T04FJ-WE2): Both parts operate at 400 kHz with wide voltage supply range (1.6V ~ 5.5V) and MSL 1 rating. These are functionally equivalent alternatives with high inventory availability.
onsemi Substitute (CAV24C04WE-GT3): This part includes automotive-grade qualification (AEC-Q100) with extended operating temperature range (-40°C ~ 125°C) and is suitable for automotive applications.
Catalyst Semiconductor Substitute (CAT24C04WI-GT3): Limited technical parameter data available; use only when other substitutes are unavailable.
Frequently Asked Questions (FAQ)
Q: Can the AT88SC0404CA-SH-T be directly replaced with any of the listed EEPROM substitutes?
A: The listed EEPROM parts share the same 8-SOIC package, I2C interface, 4Kbit memory organization, and operating temperature range. Direct replacement is mechanically and electrically compatible. However, the AT88SC0404CA-SH-T is a secure memory device with cryptographic capabilities, while the substitutes are standard EEPROM devices. Replacement is appropriate only when secure memory features are not required by the application.
Q: What is the significance of the MSL rating difference between AT24HC04BN-SH-T (MSL 3) and other substitutes (MSL 1)?
A: MSL 1 indicates unlimited shelf life and moisture sensitivity, while MSL 3 requires controlled storage conditions with a maximum floor life of 168 hours after moisture exposure. For applications with standard storage and handling practices, MSL 1 parts are preferred. MSL 3 parts require additional moisture control during assembly.
Q: Are there differences in clock frequency among the substitutes?
A: Yes. Microchip AT24C04D-SSHM-T, AT24CS04-SSHM-T, and STMicroelectronics M24C04-DRMN3TP/K and M24C04-DRMN8TP/K operate at 1 MHz. Rohm BR24G04FJ-3GTE2, BR24T04FJ-WE2, STMicroelectronics M24C04-FMN6TP, and onsemi CAV24C04WE-GT3 operate at 400 kHz. The 1 MHz parts provide faster access times (450 ns) compared to 400 kHz parts (900 ns). Selection depends on application timing requirements.
Q: Which substitutes are suitable for automotive applications?
A: STMicroelectronics M24C04-DRMN3TP/K, M24C04-DRMN8TP/K, and onsemi CAV24C04WE-GT3 carry automotive-grade qualification (AEC-Q100). These parts are qualified for automotive temperature and reliability requirements.
Q: What is the difference between AT24C04D-SSHM-T and AT24CS04-SSHM-T?
A: Both parts are Microchip EEPROM devices with 4Kbit capacity and 1 MHz operation. AT24C04D-SSHM-T supports voltage supply 1.7V ~ 3.6V with 450 ns access time. AT24CS04-SSHM-T supports wider voltage supply 1.7V ~ 5.5V with 550 ns access time. Selection depends on system voltage requirements and timing constraints.
Q: Are all substitutes available in the same packaging options as the original part?
A: All substitutes use the 8-SOIC package matching the AT88SC0404CA-SH-T. However, packaging formats (Cut Tape vs. Tape & Reel) vary by part number. Verify specific packaging availability with your supplier for your procurement requirements.
Q: What is the write cycle time for these memory devices?
A: Most substitutes specify 4ms to 5ms write cycle time for word or page operations. STMicroelectronics M24C04-DRMN3TP/K and M24C04-DRMN8TP/K specify 4ms, while other parts specify 5ms. This parameter affects programming speed during device initialization and data storage operations.
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