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AT-41533-TR2G RF Transistor NPN 12V SOT-23 Equivalent & Substitute Parts
Part Overview
The AT-41533-TR2G is an RF Transistor NPN 12V 50mA 225mW Surface Mount SOT-23 manufactured by Broadcom Limited. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement. The AT-41533-TR2G operates across the 900MHz to 2.4GHz frequency range with noise figure specifications of 1dB to 1.6dB and gain characteristics of 9dB to 14.5dB. Surface mount packaging in SOT-23 format enables integration into compact RF applications requiring low-power NPN transistor functionality.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN | — |
| Voltage - Collector Emitter Breakdown (Max) | 12V | V |
| Current - Collector (Ic) (Max) | 50mA | mA |
| Power - Max | 225mW | mW |
| Noise Figure (Typ @ f) | 1dB ~ 1.6dB @ 900MHz ~ 2.4GHz | dB |
| Gain | 9dB ~ 14.5dB | dB |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V | — |
| Operating Temperature (Max) | 150°C | °C |
| Mounting Type | Surface Mount | — |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | — |
| Product Status | Obsolete | — |
Substitute Part Grouping Explanation
Substitution of the AT-41533-TR2G is determined by strict alignment of electrical and mechanical parameters. The following criteria establish valid substitute relationships:
Primary Substitution Criteria:
- Transistor Type: NPN (mandatory match)
- Voltage - Collector Emitter Breakdown (Max): 12V or higher
- Current - Collector (Ic) (Max): 50mA or higher
- Power - Max: 225mW or higher
- Mounting Type: Surface Mount (mandatory match)
- Package / Case: SOT-23-3 or compatible form factor
- Moisture Sensitivity Level: MSL 1 or MSL 3 acceptable
Secondary Considerations:
- Noise Figure and Gain specifications within application tolerance
- DC Current Gain (hFE) characteristics suitable for circuit biasing
- Operating Temperature range encompassing 150°C maximum junction temperature
- Product Status: Active status preferred for long-term availability
Substitute parts are grouped into two categories: Direct Substitutes (matching core electrical and mechanical parameters within SOT-23 packaging) and Upgrade/Alternative Substitutes (enhanced specifications or different packaging that may require circuit redesign validation).
Parameter Comparison
| Part Number | Manufacturer | Vce (Max) [V] | Ic (Max) [mA] | Power (Max) [mW] | Package | Product Status | Noise Figure [dB] | Gain [dB] | hFE (Min) |
|---|---|---|---|---|---|---|---|---|---|
| AT-41533-TR2G | Broadcom Limited | 12 | 50 | 225 | SOT-23-3 | Obsolete | 1 ~ 1.6 @ 900MHz ~ 2.4GHz | 9 ~ 14.5 | 30 @ 5mA, 5V |
| MMBT5179 | onsemi | 12 | 50 | 225 | SOT-23-3 | Active | 5 @ 200MHz | 15 | 25 @ 3mA, 1V |
| MMBTH10-7-F | Diodes Incorporated | 25 | 50 | 300 | SOT-23-3 | Active | — | — | 60 @ 4mA, 10V |
| 2SC5488A-TL-H | onsemi | 10 | 70 | 100 | 3-SSFP | Active | 1 @ 1GHz | 12 | 90 @ 20mA, 5V |
| BFP720ESDH6327XTSA1 | Infineon Technologies | 4.7 | 30 | 100 | SOT-343 | Active | 0.55 ~ 1.55 @ 150MHz ~ 10GHz | 11 ~ 30.5 | 160 @ 15mA, 3V |
| HFA3102BZ96 | Renesas Electronics Corporation | 12 | 30 | 250 | 14-SOIC | Active | 1.8 ~ 2.1 @ 500MHz ~ 1GHz | 12.4 ~ 17.5 | 40 @ 10mA, 3V |
| NSVF4009SG4T1G | onsemi | 3.5 | 40 | 120 | SC-82FL/MCPH4 | Active | 1.1 @ 2GHz | 17 | 50 @ 5mA, 1V |
| PH1090-350L | MACOM Technology Solutions | 80 | 17000 | 350000 | Chassis Mount | Active | — | 8.32 | — |
| MMBT2484LT1G | onsemi | 60 | 100 | 225 | SOT-23-3 | Active | — | — | 250 @ 1mA, 5V |
| MMBT2484LT3G | onsemi | 60 | 100 | 225 | SOT-23-3 | Active | — | — | 250 @ 1mA, 5V |
| MMBT6429LT1G | onsemi | 45 | 200 | 225 | SOT-23-3 | Active | — | — | 500 @ 100µA, 5V |
Engineering Selection Recommendations
Direct Substitute - Recommended for Pin-Compatible Replacement:
MMBT5179 (onsemi) is the primary direct substitute for AT-41533-TR2G. Both parts share identical voltage rating (12V Vce max), collector current rating (50mA max), power dissipation (225mW), and SOT-23-3 packaging. MMBT5179 is Active status with RoHS3 compliance and MSL 1 rating, ensuring long-term availability and environmental compliance. The noise figure specification of 5dB at 200MHz and gain of 15dB are within acceptable tolerance for RF applications in the specified frequency range. This part requires no circuit redesign and provides direct functional equivalence.
Upgrade Substitute - Enhanced Voltage Margin:
MMBTH10-7-F (Diodes Incorporated) offers enhanced voltage rating (25V Vce max versus 12V) and increased power dissipation (300mW versus 225mW) while maintaining 50mA collector current and SOT-23-3 packaging. This part is suitable for applications requiring additional voltage headroom or thermal margin. Active status and RoHS3 compliance confirm production continuity. Circuit validation is recommended to confirm gain and noise figure compatibility.
Alternative Substitutes - Different Packaging or Specifications:
HFA3102BZ96 (Renesas Electronics Corporation) provides 12V Vce rating and 250mW power dissipation in 14-SOIC packaging. This part is a 6 NPN array configuration rather than single transistor, requiring circuit redesign. Active status and RoHS3 compliance are confirmed.
NSVF4009SG4T1G (onsemi) operates at 3.5V Vce max with 40mA collector current in SC-82FL/MCPH4 packaging. This part is AEC-Q101 automotive qualified and suitable for lower-voltage RF applications. Voltage and current ratings are below AT-41533-TR2G specifications and require application validation.
2SC5488A-TL-H (onsemi) operates at 10V Vce max with 70mA collector current in 3-SSFP packaging. This part is suitable for higher-frequency applications (7GHz transition frequency) but requires packaging adaptation and circuit redesign.
Not Recommended for Direct Substitution:
BFP720ESDH6327XTSA1 (Infineon Technologies) has 4.7V Vce max rating, below the 12V requirement, and operates in SOT-343 packaging. This part is unsuitable for 12V circuit operation.
PH1090-350L (MACOM Technology Solutions) is a high-power chassis-mount RF transistor with 80V Vce rating and 17A collector current. This part is not compatible with SOT-23 surface mount applications and is intended for discrete high-power RF amplifier stages.
MMBT2484LT1G and MMBT2484LT3G (onsemi) are general-purpose NPN transistors rated 60V Vce max with 100mA collector current. These parts lack RF-specific noise figure and gain specifications and are not suitable for RF applications requiring the AT-41533-TR2G performance envelope.
MMBT6429LT1G (onsemi) is a general-purpose NPN transistor rated 45V Vce max with 200mA collector current and 700MHz transition frequency. This part lacks RF-specific noise figure specifications and is not optimized for the 900MHz to 2.4GHz frequency range of the original part.
Frequently Asked Questions (FAQ)
Q: Can MMBT5179 be used as a direct replacement for AT-41533-TR2G without circuit modification?
A: Yes. MMBT5179 shares identical voltage rating (12V), collector current (50mA), power dissipation (225mW), and SOT-23-3 packaging. Both parts are NPN RF transistors. No circuit modification is required for pin-compatible substitution. Verify noise figure and gain specifications are acceptable for your specific RF frequency and application requirements.
Q: What is the key difference between MMBT5179 and MMBTH10-7-F?
A: MMBTH10-7-F provides higher voltage rating (25V versus 12V) and increased power dissipation (300mW versus 225mW). Both maintain 50mA collector current and SOT-23-3 packaging. MMBTH10-7-F is suitable when additional voltage margin or thermal headroom is required. Circuit validation is recommended to confirm RF performance compatibility.
Q: Why is HFA3102BZ96 listed as a substitute if it uses different packaging?
A: HFA3102BZ96 is listed as a manufacturer-recommended substitute from the original part specification. However, it is a 6 NPN array in 14-SOIC packaging, not a single transistor in SOT-23. This part requires significant circuit redesign and is not recommended for direct substitution without engineering review.
Q: Can BFP720ESDH6327XTSA1 replace AT-41533-TR2G in a 12V circuit?
A: No. BFP720ESDH6327XTSA1 has maximum Vce rating of 4.7V, which is below the 12V requirement. Operating this part at 12V would exceed its voltage rating and cause device failure. This part is not suitable for 12V circuit applications.
Q: Is NSVF4009SG4T1G suitable for applications requiring 12V operation?
A: No. NSVF4009SG4T1G has maximum Vce rating of 3.5V and maximum collector current of 40mA, both below the AT-41533-TR2G specifications. This part is designed for lower-voltage RF applications and is not compatible with 12V circuit requirements.
Q: What does "Active" product status mean for substitute parts?
A: Active status indicates the part is currently in production and available from the manufacturer. This ensures long-term procurement availability, ongoing technical support, and compliance with current environmental regulations (RoHS3). Obsolete parts like AT-41533-TR2G are no longer manufactured, making Active substitutes necessary for new designs and ongoing production.
Q: Are MMBT2484LT1G and MMBT6429LT1G suitable RF substitutes?
A: No. These are general-purpose NPN transistors without RF-specific noise figure and gain specifications. MMBT2484LT1G is rated 60V with 100mA collector current. MMBT6429LT1G is rated 45V with 200mA collector current and 700MHz transition frequency. Neither part is optimized for the 900MHz to 2.4GHz RF frequency range and lack the noise figure performance required for RF applications.
Q: What is Moisture Sensitivity Level (MSL) and why does it matter?
A: MSL indicates the maximum time a component can be exposed to ambient moisture before soldering without baking. MSL 1 (Unlimited) means the part has no moisture sensitivity restrictions. MSL 3 (168 Hours) requires baking before soldering if exposed to moisture beyond the specified time. Both ratings are acceptable; MSL 1 provides greater handling flexibility in manufacturing environments.
Q: Can PH1090-350L be used in place of AT-41533-TR2G?
A: No. PH1090-350L is a high-power chassis-mount RF transistor with 80V Vce rating, 17A collector current, and 350W power dissipation. This part is designed for discrete high-power RF amplifier stages and is not compatible with SOT-23 surface mount applications or the 50mA collector current requirement of AT-41533-TR2G.
Q: What compliance certifications should I verify when selecting a substitute?
A: Verify RoHS3 compliance for environmental regulation adherence. Confirm REACH status (REACH Unaffected is acceptable). Check ECCN classification for export control compliance if applicable. For automotive applications, verify AEC-Q101 qualification if required. All recommended substitutes listed meet these compliance requirements.
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