AT-41533-TR1 Equivalent & Substitute Parts Reference

Part Overview

The AT-41533-TR1 is an RF transistor NPN manufactured by Broadcom Limited, designed for 12V applications with 50mA collector current and 225mW power dissipation in a surface mount SOT-23 package. This component is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity. The part operates across the 900MHz to 2.4GHz frequency range with noise figure specifications of 1dB to 1.6dB and gain characteristics of 9dB to 14.5dB.

Substiute Parts

AT-41533-TR1
Broadcom LimitedIn Stock: 4639AT-41533-TR1 Datasheet
AT-41533-TR1
Current Part
BFR460L3E6327XTMA1
Infineon TechnologiesIn Stock: 15936BFR460L3E6327XTMA1 Datasheet
BFR460L3E6327XTMA1
Direct
BFR193L3E6327XTMA1
Infineon TechnologiesIn Stock: 990BFR193L3E6327XTMA1 Datasheet
BFR193L3E6327XTMA1
Upgrade
2SC5347AE-TD-E
onsemiIn Stock: 41392SC5347AE-TD-E Datasheet
2SC5347AE-TD-E
MFR Recommended
BFP405H6740XTSA1
Infineon TechnologiesIn Stock: 961BFP405H6740XTSA1 Datasheet
BFP405H6740XTSA1
MFR Recommended
BFP640ESDH6327XTSA1
Infineon TechnologiesIn Stock: 1267BFP640ESDH6327XTSA1 Datasheet
BFP640ESDH6327XTSA1
MFR Recommended
KSP10TA
Fairchild SemiconductorIn Stock: 2174KSP10TA Datasheet
KSP10TA
MFR Recommended
MMBT2484LT1G
onsemiIn Stock: 9298MMBT2484LT1G Datasheet
MMBT2484LT1G
MFR Recommended
MMBT2484LT3G
onsemiIn Stock: 30521MMBT2484LT3G Datasheet
MMBT2484LT3G
MFR Recommended
MMBT6429LT1G
onsemiIn Stock: 155261MMBT6429LT1G Datasheet
MMBT6429LT1G
MFR Recommended

Key Parameters

Parameter AT-41533-TR1 Value Unit
Transistor Type NPN -
Voltage - Collector Emitter Breakdown (Max) 12V V
Current - Collector (Ic) (Max) 50mA mA
Power - Max 225mW mW
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V -
Noise Figure (dB Typ @ f) 1dB ~ 1.6dB @ 900MHz ~ 2.4GHz dB
Gain 9dB ~ 14.5dB dB
Operating Temperature (TJ) 150°C °C
Mounting Type Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 -
Product Status Obsolete -
RoHS Status RoHS non-compliant -

Substitute Part Grouping Explanation

Substitute parts for the AT-41533-TR1 are categorized based on the following substitution criteria:

Direct Substitutes maintain compatibility through matching or exceeding the following parameters:

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): ≥12V
  • Current - Collector (Ic) (Max): ≥50mA
  • Power - Max: ≥225mW
  • Mounting Type: Surface Mount
  • Operating Temperature: ≥150°C (TJ)

Upgrade Substitutes provide enhanced performance while maintaining core electrical compatibility:

  • Higher frequency transition capability
  • Increased power dissipation capacity
  • Improved gain characteristics
  • Active product status with RoHS3 compliance

Alternative Substitutes offer functional equivalence with different package configurations or slightly modified electrical parameters within acceptable operating ranges for RF applications.

The substitution logic prioritizes parts with active product status and RoHS3 compliance where available, while ensuring all critical electrical parameters meet or exceed the original specification.

Parameter Comparison

Part Number Manufacturer Vce (Max) [V] Ic (Max) [mA] Power (Max) [mW] hFE (Min) @ Ic, Vce Frequency [GHz] Package Product Status RoHS Status
AT-41533-TR1 Broadcom Limited 12 50 225 30 @ 5mA, 5V 0.9-2.4 SOT-23-3 Obsolete Non-compliant
BFR460L3E6327XTMA1 Infineon Technologies 5.8 50 200 90 @ 20mA, 3V 22 PG-TSLP-3-1 Active ROHS3 Compliant
BFR193L3E6327XTMA1 Infineon Technologies 12 80 580 70 @ 30mA, 8V 8 PG-TSLP-3-1 Active ROHS3 Compliant
2SC5347AE-TD-E onsemi 12 150 1300 90 @ 50mA, 5V 4.7 PCP Obsolete ROHS3 Compliant
BFP405H6740XTSA1 Infineon Technologies 5 25 75 60 @ 5mA, 4V 25 PG-SOT343-3D Active ROHS3 Compliant
BFP640ESDH6327XTSA1 Infineon Technologies 4.7 50 200 110 @ 30mA, 3V 46 PG-SOT343-4-2 Active ROHS3 Compliant
KSP10TA Fairchild Semiconductor 25 - 350 60 @ 4mA, 10V 0.65 TO-92-3 Active -
MMBT2484LT1G onsemi 60 100 225 250 @ 1mA, 5V - SOT-23-3 Active ROHS3 Compliant
MMBT2484LT3G onsemi 60 100 225 250 @ 1mA, 5V - SOT-23-3 Active ROHS3 Compliant
MMBT6429LT1G onsemi 45 200 225 500 @ 100µA, 5V 0.7 SOT-23-3 Active ROHS3 Compliant

Engineering Selection Recommendations

For Direct Voltage and Current Compatibility (12V, 50mA minimum):

BFR193L3E6327XTMA1 is the primary upgrade substitute. This part maintains the 12V collector-emitter breakdown voltage specification while providing 80mA collector current capacity and 580mW power dissipation. The part is manufactured by Infineon Technologies with active product status and ROHS3 compliance, addressing the obsolescence and compliance limitations of the original AT-41533-TR1.

For Active Product Status with RoHS3 Compliance in SOT-23 Package:

MMBT2484LT3G and MMBT2484LT1G offer the same SOT-23-3 package footprint with 225mW power rating matching the original specification. These onsemi parts are actively produced with ROHS3 compliance. However, the 60V collector-emitter breakdown voltage exceeds the 12V requirement, and frequency transition data is not provided, limiting their use to non-RF applications or lower frequency RF circuits.

MMBT6429LT1G provides 45V collector-emitter breakdown, 200mA collector current, and 700MHz frequency transition in the same SOT-23-3 package with active status and ROHS3 compliance.

For Higher Frequency RF Applications:

BFP640ESDH6327XTSA1 operates at 46GHz with 50mA collector current and 200mW power dissipation. This part is suitable for applications requiring extended frequency range beyond the original 2.4GHz specification. The 4.7V collector-emitter breakdown voltage requires circuit redesign for lower voltage operation.

BFP405H6740XTSA1 provides 25GHz operation in a smaller SOT-343 package with 25mA collector current, suitable for miniaturized RF designs operating at higher frequencies.

For Increased Power Dissipation Requirements:

2SC5347AE-TD-E maintains 12V collector-emitter breakdown voltage with significantly increased power capacity (1.3W) and collector current (150mA). This part uses a different package (PCP) and is classified as obsolete but offers ROHS3 compliance.

For Through-Hole Applications:

KSP10TA is a through-hole alternative with 25V collector-emitter breakdown and 650MHz frequency transition. This part is suitable only for non-surface-mount designs and lower frequency applications.

Frequently Asked Questions (FAQ)

Q: Can BFR193L3E6327XTMA1 directly replace AT-41533-TR1 in existing PCB designs?

A: No. While BFR193L3E6327XTMA1 maintains the 12V collector-emitter breakdown voltage and exceeds the 50mA collector current requirement, it uses a different package (PG-TSLP-3-1) compared to the original SOT-23-3. PCB layout modifications are required. The part is pin-compatible functionally but requires footprint redesign.

Q: What is the primary reason to substitute AT-41533-TR1?

A: The original part is classified as obsolete with RoHS non-compliant status. Substitution is necessary for production continuity and regulatory compliance. BFR193L3E6327XTMA1 provides the closest electrical match with active product status and ROHS3 compliance.

Q: Are MMBT2484LT1G and MMBT2484LT3G suitable RF replacements?

A: These parts maintain the SOT-23-3 package and 225mW power rating but lack frequency transition specifications and are designed for general-purpose switching applications rather than RF. They are suitable only for non-RF or very low frequency applications. The 60V collector-emitter breakdown voltage is significantly higher than the 12V requirement.

Q: What is the difference between MMBT2484LT1G and MMBT2484LT3G?

A: Both parts are electrically identical. The difference is packaging: MMBT2484LT1G is supplied in Cut Tape format, while MMBT2484LT3G is supplied in Tape & Reel format. Selection depends on procurement and assembly requirements.

Q: Can BFP640ESDH6327XTSA1 operate at 12V?

A: No. BFP640ESDH6327XTSA1 has a maximum collector-emitter breakdown voltage of 4.7V. Operating at 12V will exceed the absolute maximum rating and cause device failure. This part requires circuit redesign for lower voltage operation.

Q: Is KSP10TA suitable for RF applications?

A: KSP10TA is a through-hole general-purpose transistor with 650MHz frequency transition. It is not optimized for RF applications and lacks the noise figure and gain specifications required for RF circuits. Use is limited to low-frequency switching applications.

Q: What package considerations apply when substituting AT-41533-TR1?

A: The original part uses SOT-23-3 surface mount package. Direct package-compatible substitutes include MMBT2484LT1G, MMBT2484LT3G, and MMBT6429LT1G. Upgrade substitutes such as BFR193L3E6327XTMA1 use different packages (PG-TSLP-3-1) requiring PCB redesign. High-frequency alternatives like BFP640ESDH6327XTSA1 and BFP405H6740XTSA1 use SOT-343 packages, which are smaller but require different footprints.

Q: Which substitute offers the best compliance profile?

A: All recommended active substitutes (BFR193L3E6327XTMA1, BFP640ESDH6327XTSA1, BFP405H6740XTSA1, MMBT2484LT1G, MMBT2484LT3G, MMBT6429LT1G) carry ROHS3 compliance certification. BFR193L3E6327XTMA1 is recommended for closest electrical compatibility with compliance.

Q: What are the noise figure implications of substitution?

A: The original AT-41533-TR1 specifies 1dB to 1.6dB noise figure at 900MHz to 2.4GHz. BFR193L3E6327XTMA1 provides 1dB to 1.6dB noise figure at 900MHz to 1.8GHz, maintaining specification within the lower frequency range. BFP640ESDH6327XTSA1 specifies 0.6dB to 2dB across 150MHz to 10GHz, providing broader frequency coverage with variable noise performance.

Request Quote (Ships tomorrow)