AT-32032-TR1G RF Transistor NPN Equivalent & Substitute Parts

Part Overview

The AT-32032-TR1G is an RF NPN transistor manufactured by Broadcom Limited, designed for surface mount applications in the SC-70-3 package. This component operates at 5.5V maximum collector-emitter breakdown voltage with a maximum power dissipation of 200mW and collector current of 40mA. The device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity.

Substiute Parts

AT-32032-TR1G

Broadcom LimitedIn Stock: 42478AT-32032-TR1G Datasheet

Current PartRFQ

2SC4774T106S

Rohm SemiconductorIn Stock: 66292SC4774T106S Datasheet

MFR RecommendedRFQ

BFP405FH6327XTSA1

Infineon TechnologiesIn Stock: 3962BFP405FH6327XTSA1 Datasheet

MFR RecommendedRFQ

BFP640ESDH6327XTSA1

Infineon TechnologiesIn Stock: 1267BFP640ESDH6327XTSA1 Datasheet

MFR RecommendedRFQ

BFP720FH6327XTSA1

Infineon TechnologiesIn Stock: 7560BFP720FH6327XTSA1 Datasheet

MFR RecommendedRFQ

BFU660F,115

NXP USA Inc.In Stock: 2114BFU660F,115 Datasheet

MFR RecommendedRFQ

MMBTH10LT3G

onsemiIn Stock: 1163MMBTH10LT3G Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the AT-32032-TR1G is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

• Transistor Type: NPN (mandatory match)
• Voltage - Collector Emitter Breakdown (Max): ≥ 5.5V
• Power - Max: ≥ 200mW
• Current - Collector (Ic) (Max): ≥ 40mA
• Operating Temperature: ≥ 150°C (TJ)
• Mounting Type: Surface Mount
• Package compatibility: SC-70, SOT-323, or equivalent small-outline surface mount packages

Secondary Considerations:

• DC Current Gain (hFE): Minimum 70 @ specified conditions
• Noise Figure and Gain characteristics for RF applications
• Product Status and compliance certifications

The substitute parts listed below satisfy these criteria with varying degrees of parameter overlap. Parts are grouped by their suitability for direct replacement based on electrical performance and package form factor.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: 2SC4774T106S (Rohm Semiconductor)

The 2SC4774T106S provides the closest electrical match to the AT-32032-TR1G with 6V maximum collector-emitter breakdown voltage, 200mW power dissipation, and 50mA maximum collector current. DC current gain of 180 @ 5mA, 5V exceeds the original specification. Operating temperature reaches 150°C (TJ). Package compatibility is maintained with SC-70, SOT-323 form factor. Product status is "Not For New Designs," indicating mature technology suitable for legacy system support. ROHS3 compliance and REACH unaffected status align with regulatory requirements.

Secondary Substitutes: BFP640ESDH6327XTSA1 and BFU660F,115

BFP640ESDH6327XTSA1 (Infineon Technologies) meets electrical requirements with 4.7V breakdown voltage, 200mW power, and 50mA collector current. Active product status and ROHS3 compliance support new design integration. Package is SC-82A, SOT-343, requiring PCB layout verification.

BFU660F,115 (NXP USA Inc.) matches the original 5.5V breakdown voltage specification with 225mW power and 60mA collector current. Active product status and ROHS3 compliance enable direct integration. Package is SOT-343F, compatible with SC-70 footprint requirements.

Limited Substitutes: BFP720FH6327XTSA1 and BFP405FH6327XTSA1

BFP720FH6327XTSA1 (Infineon Technologies) operates at 4.7V breakdown voltage with reduced power dissipation (100mW) and collector current (25mA). Suitable only for applications with lower power requirements. Active product status and ROHS3 compliance are confirmed.

BFP405FH6327XTSA1 (Infineon Technologies) is limited by 75mW power dissipation and 25mA collector current, below the original 200mW and 40mA specifications. Applicable only to reduced-power circuit variants. Active product status and ROHS3 compliance are confirmed.

Conditional Substitute: MMBTH10LT3G (onsemi)

MMBTH10LT3G operates at 25V breakdown voltage, significantly exceeding the 5.5V requirement. Power dissipation (225mW) and thermal range (−55°C ~ 150°C) are adequate. Package is TO-236-3, SOT-23-3, differing from the original SC-70 footprint. Active product status and ROHS3 compliance are confirmed. Substitution requires PCB redesign for package accommodation.

Frequently Asked Questions (FAQ)

Q: Can the 2SC4774T106S directly replace the AT-32032-TR1G without circuit modification?

A: The 2SC4774T106S meets all critical electrical parameters: NPN type, 6V breakdown voltage (exceeds 5.5V requirement), 200mW power dissipation, 50mA collector current (exceeds 40mA), and 150°C operating temperature. Package compatibility with SC-70, SOT-323 enables direct PCB substitution. No circuit modification is required for electrical performance. Verify DC current gain characteristics (180 @ 5mA, 5V) are acceptable for your bias network design.

Q: What is the primary reason the AT-32032-TR1G is obsolete?

A: The AT-32032-TR1G is classified as obsolete by Broadcom Limited. Substitute parts from active manufacturers (Infineon, NXP, onsemi, Rohm) provide equivalent or superior RF performance with modern compliance certifications (ROHS3). Inventory availability of substitute parts is confirmed at multiple distributors.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed (2SC4774T106S, BFP405FH6327XTSA1, BFP640ESDH6327XTSA1, BFP720FH6327XTSA1, BFU660F,115, MMBTH10LT3G) are ROHS3 compliant. The original AT-32032-TR1G compliance status is not specified in available documentation.

Q: Which substitute part is recommended for new design integration?

A: BFU660F,115 (NXP USA Inc.) is recommended for new designs. It matches the original 5.5V breakdown voltage specification, provides 225mW power dissipation and 60mA collector current, maintains SOT-343F package compatibility, and carries active product status with ROHS3 compliance. Infineon BFP640ESDH6327XTSA1 is an alternative active-status option with equivalent electrical performance.

Q: Can BFP720FH6327XTSA1 be used in high-power RF applications?

A: No. BFP720FH6327XTSA1 is limited to 100mW power dissipation and 25mA collector current, below the original 200mW and 40mA specifications. This part is suitable only for low-power RF circuits. For applications requiring the full 200mW power budget, use 2SC4774T106S, BFP640ESDH6327XTSA1, BFU660F,115, or MMBTH10LT3G.

Q: What package considerations apply to MMBTH10LT3G substitution?

A: MMBTH10LT3G uses TO-236-3 (SOT-23-3) package, differing from the original SC-70 (SOT-323) footprint. PCB layout redesign is required. Pin configuration must be verified against schematic requirements. The larger package may impact circuit board space allocation. Thermal performance characteristics differ due to package geometry.

Q: Are noise figure and gain specifications critical for substitution?

A: Noise figure and gain specifications are application-dependent. The original AT-32032-TR1G specifies 1dB ~ 1.3dB noise figure @ 900MHz and 13.5dB ~ 15dB gain. Substitute parts provide varying noise figure and gain characteristics. For RF applications sensitive to noise performance, compare specifications against circuit requirements. BFU660F,115 provides 0.6dB ~ 1.2dB noise figure @ 1.5GHz ~ 5.8GHz, suitable for low-noise RF designs.

Q: What is the moisture sensitivity level (MSL) for all parts?

A: All parts listed, including the original AT-32032-TR1G and all substitutes, have MSL rating of 1 (Unlimited). This indicates unlimited shelf life without moisture exposure controls, simplifying inventory management and storage requirements.

Q: Can multiple substitute parts be used interchangeably in production?

A: Electrical interchangeability is confirmed for 2SC4774T106S, BFP640ESDH6327XTSA1, and BFU660F,115 within the specified parameter ranges. Package form factors differ (SC-70 vs. SOT-343 vs. SOT-343F), requiring PCB design verification for each part. Production qualification testing is recommended before implementing multiple substitutes in the same assembly.