AT-32011-TR2G Equivalent & Substitute Parts

Part Overview

The AT-32011-TR2G is an RF Transistor NPN manufactured by Broadcom Limited, designed for RF applications requiring low-noise amplification at 900MHz. This Surface Mount device operates at 5.5V maximum collector-emitter breakdown voltage with a maximum power dissipation of 200mW and collector current of 32mA. The part is classified as Obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and production continuity. Substitute parts must maintain compatibility with the original electrical specifications and Surface Mount packaging requirements while meeting current availability and compliance standards.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	5.5	V
Current - Collector (Ic) (Max)	32	mA
Power - Max	200	mW
Noise Figure (Typ @ f)	1–1.3	dB @ 900MHz
Gain	12.5–14	dB
DC Current Gain (hFE) (Min)	70	@ 2mA, 2.7V
Operating Temperature (TJ)	150	°C
Mounting Type	Surface Mount	—
Package / Case	TO-253-4, TO-253AA	—
Supplier Device Package	SOT-143	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the AT-32011-TR2G is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Transistor Type: NPN (mandatory match)
Voltage - Collector Emitter Breakdown (Max): Must equal or exceed 5.5V
Current - Collector (Ic) (Max): Must equal or exceed 32mA
Power - Max: Must equal or exceed 200mW
Operating Temperature (TJ): Must equal or exceed 150°C
Mounting Type: Surface Mount (mandatory match)

Secondary Compatibility Factors:

Noise Figure performance at RF frequencies (900MHz and above)
DC Current Gain (hFE) characteristics
Frequency response and gain specifications
Package form factor and pin configuration

The substitute parts listed below satisfy the primary electrical requirements while offering improved or equivalent performance characteristics. Substitutes are grouped by their ability to directly replace the AT-32011-TR2G in RF low-noise amplifier applications.

Parameter Comparison

Parameter	AT-32011-TR2G (Main)	2SC4713KT146R	2SC5347AE-TD-E	BFP640ESDH6327XTSA1	BFP740FESDH6327XTSA1	BFR193L3E6327XTMA1
Transistor Type	NPN	NPN	NPN	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	5.5V	6V	12V	4.7V	4.7V	12V
Current - Collector (Ic) (Max)	32mA	50mA	150mA	50mA	45mA	80mA
Power - Max	200mW	200mW	1.3W	200mW	160mW	580mW
DC Current Gain (hFE) (Min)	70 @ 2mA, 2.7V	180 @ 5mA, 5V	90 @ 50mA, 5V	110 @ 30mA, 3V	160 @ 25mA, 3V	70 @ 30mA, 8V
Frequency - Transition	—	800MHz	4.7GHz	46GHz	47GHz	8GHz
Noise Figure (Typ @ f)	1–1.3dB @ 900MHz	—	1.8dB @ 1GHz	0.6–2dB @ 150MHz–10GHz	0.5–1.45dB @ 150MHz–10GHz	1–1.6dB @ 900MHz–1.8GHz
Gain	12.5–14dB	—	8dB	7–30dB	9–31dB	12.5–19dB
Operating Temperature (TJ)	150°C	150°C	150°C	150°C	150°C	150°C
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-253-4, TO-253AA	TO-236-3, SC-59, SOT-23-3	TO-243AA	SC-82A, SOT-343	4-SMD, Flat Leads	SC-101, SOT-883
Product Status	Obsolete	Active	Obsolete	Active	Active	Active
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

2SC4713KT146R (Rohm Semiconductor)

This part meets all primary electrical substitution criteria with 6V breakdown voltage, 50mA collector current, and 200mW power rating. The device is in Active product status with ROHS3 compliance, ensuring long-term availability and regulatory alignment. The 800MHz transition frequency and higher DC current gain (180 @ 5mA, 5V) provide improved performance margin for RF applications. Package form factor (SOT-23-3) differs from the original SOT-143, requiring PCB layout verification. Inventory availability is high (1745 pcs).

2SC5347AE-TD-E (onsemi)

This part exceeds electrical requirements with 12V breakdown voltage, 150mA collector current, and 1.3W power rating. However, the device is classified as Obsolete, limiting long-term supply assurance. ROHS3 compliance is confirmed. The 4.7GHz transition frequency and 1.8dB noise figure @ 1GHz support higher-frequency RF applications. Package form factor (TO-243AA) differs significantly from the original SOT-143. Use only when higher power and voltage margins are required and supply continuity can be verified.

BFP640ESDH6327XTSA1 (Infineon Technologies)

This part meets primary electrical criteria with 4.7V breakdown voltage, 50mA collector current, and 200mW power rating. The device is in Active product status with ROHS3 compliance. Superior RF performance is provided with 46GHz transition frequency and noise figure of 0.6–2dB across 150MHz–10GHz. DC current gain of 110 @ 30mA, 3V supports stable biasing. Package form factor (SOT-343) differs from the original SOT-143, requiring PCB layout verification. Inventory availability is high (1225 pcs).

BFP740FESDH6327XTSA1 (Infineon Technologies)

This part meets primary electrical criteria with 4.7V breakdown voltage, 45mA collector current, and 160mW power rating. The device is in Active product status with ROHS3 compliance. Exceptional RF performance is provided with 47GHz transition frequency and noise figure of 0.5–1.45dB across 150MHz–10GHz. DC current gain of 160 @ 25mA, 3V supports stable biasing. Package form factor (4-TSFP) differs from the original SOT-143, requiring PCB layout verification. Inventory availability is highest among substitutes (6007 pcs).

BFR193L3E6327XTMA1 (Infineon Technologies)

This part exceeds electrical requirements with 12V breakdown voltage, 80mA collector current, and 580mW power rating. The device is in Active product status with ROHS3 compliance. RF performance is suitable with 8GHz transition frequency and noise figure of 1–1.6dB @ 900MHz–1.8GHz, closely matching the original specification. DC current gain of 70 @ 30mA, 8V matches the original hFE characteristic. Package form factor (SOT-883) differs from the original SOT-143, requiring PCB layout verification. Use when higher voltage and power margins are required. Inventory availability is moderate (882 pcs).

Frequently Asked Questions (FAQ)

Q: Can I directly replace AT-32011-TR2G with any of these substitute parts without PCB modification?

A: No. While all substitute parts meet the electrical specifications, they use different package form factors (SOT-23-3, TO-243AA, SOT-343, 4-TSFP, SOT-883) compared to the original SOT-143. PCB layout modifications are required, including pad repositioning and trace routing adjustments. Verify pin assignments and mechanical dimensions before implementation.

Q: Which substitute part provides the closest electrical match to the AT-32011-TR2G?

A: BFR193L3E6327XTMA1 provides the closest electrical match with identical DC current gain (hFE) of 70 and noise figure performance (1–1.6dB) in the 900MHz–1.8GHz range. However, it exceeds the original voltage and power ratings (12V, 580mW vs. 5.5V, 200mW), which may introduce design margin considerations.

Q: Are all substitute parts RoHS compliant?

A: Yes. All substitute parts listed are ROHS3 compliant. The original AT-32011-TR2G does not specify RoHS status. All substitutes meet current environmental and regulatory requirements for commercial and industrial applications.

Q: What is the difference between Active and Obsolete product status?

A: Active products are in current production with guaranteed long-term availability and supply continuity. Obsolete products are no longer manufactured and have limited remaining inventory. 2SC5347AE-TD-E is Obsolete; all other substitutes are Active. For new designs, prioritize Active parts.

Q: Can I use BFP740FESDH6327XTSA1 in place of AT-32011-TR2G for 900MHz RF applications?

A: Yes. BFP740FESDH6327XTSA1 meets all primary electrical criteria and provides superior RF performance with 47GHz transition frequency and 0.5–1.45dB noise figure. The 4.7V breakdown voltage is slightly lower than the original 5.5V; verify circuit design margins. Package form factor (4-TSFP) requires PCB modification.

Q: What are the key differences between the Infineon RF transistors (BFP640, BFP740, BFR193)?

A: BFP640ESDH6327XTSA1 and BFP740FESDH6327XTSA1 are optimized for ultra-high-frequency applications (46–47GHz) with lower noise figures (0.6–1.45dB). BFR193L3E6327XTMA1 is optimized for lower-frequency RF applications (8GHz) with higher power handling (580mW) and voltage rating (12V). Select based on target frequency range and power requirements.

Q: Is moisture sensitivity a concern when substituting these parts?

A: No. All parts, including the original AT-32011-TR2G, have Moisture Sensitivity Level (MSL) of 1 (Unlimited), indicating no moisture sensitivity. Standard handling and storage procedures apply.

Q: Which substitute part has the highest inventory availability?

A: BFP740FESDH6327XTSA1 has the highest inventory availability with 6007 pcs in stock, followed by 2SC4713KT146R (1745 pcs) and BFP640ESDH6327XTSA1 (1225 pcs). Inventory levels support immediate procurement for production requirements.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message