AT25DN256-SSHF-T Equivalent & Substitute Parts

Part Overview

The AT25DN256-SSHF-T is a 256Kbit FLASH memory IC manufactured by Renesas Electronics Corporation, designed for SPI serial interface applications. This non-volatile memory device operates at 104 MHz and is housed in an 8-SOIC surface mount package. The part is currently in active production status with 905 units available in inventory. Substitute parts are identified when equivalent electrical specifications and mechanical compatibility allow direct replacement in circuit designs without functional degradation.

Substiute Parts

AT25DN256-SSHF-T

Renesas Electronics CorporationIn Stock: 956AT25DN256-SSHF-T Datasheet

Current PartRFQ

AT25DF256-SSHN-T

Renesas Electronics CorporationIn Stock: 8169AT25DF256-SSHN-T Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

The AT25DF256-SSHN-T qualifies as a direct substitute based on the following critical parameters:

• Memory capacity: 256Kbit (identical)
• Memory organization: 32K x 8 (identical)
• Serial interface: SPI (identical)
• Clock frequency: 104 MHz (identical)
• Package type: 8-SOIC with 0.154" width, 3.90mm (identical)
• Surface mount configuration (identical)
• Operating temperature range: -40°C ~ 85°C (identical)
• RoHS3 compliance (identical)
• Moisture sensitivity level: 1 (Unlimited) (identical)

Both parts are manufactured by Renesas Electronics Corporation and maintain active product status. The substitute part operates across an extended supply voltage range (1.65V ~ 3.6V versus 2.3V ~ 3.6V), providing broader compatibility in low-voltage applications.

Parameter Comparison

Engineering Selection Recommendations

Both the AT25DN256-SSHF-T and AT25DF256-SSHN-T are active production parts from Renesas Electronics Corporation with identical RoHS3 compliance and REACH unaffected status. The AT25DF256-SSHN-T provides extended supply voltage range capability (1.65V minimum versus 2.3V minimum), making it suitable for low-voltage system designs. The page write cycle time difference (1.75ms versus 2.5ms) is within acceptable tolerance for most SPI FLASH memory applications. Both parts maintain identical package geometry, pinout, and thermal operating range, ensuring direct PCB compatibility without layout modifications.

Frequently Asked Questions (FAQ)

Q: Can AT25DF256-SSHN-T replace AT25DN256-SSHF-T in existing designs?

A: Yes. Both parts share identical memory capacity (256Kbit), organization (32K x 8), SPI interface, clock frequency (104 MHz), 8-SOIC package dimensions, and operating temperature range (-40°C ~ 85°C). The substitute part operates across a wider supply voltage range (1.65V ~ 3.6V), providing enhanced compatibility with low-voltage applications.

Q: What is the difference in write cycle performance?

A: The page write cycle time differs: AT25DN256-SSHF-T requires 1.75ms per page, while AT25DF256-SSHN-T requires 2.5ms per page. Word write cycle time remains identical at 8µs for both parts. This difference does not affect functional compatibility in standard SPI FLASH applications.

Q: Are the packages physically identical?

A: Yes. Both parts use 8-SOIC surface mount packages with 0.154" width and 3.90mm body dimensions. No PCB layout or footprint modifications are required for substitution.

Q: Do both parts meet the same compliance standards?

A: Yes. Both AT25DN256-SSHF-T and AT25DF256-SSHN-T are ROHS3 compliant, REACH unaffected, classified as EAR99, and share identical HTSUS code 8542.32.0071. Moisture sensitivity level is 1 (Unlimited) for both parts.

Q: Which part should be selected for new designs?

A: Selection depends on supply voltage requirements. For systems operating at 2.3V or higher, either part is suitable. For systems requiring operation below 2.3V, the AT25DF256-SSHN-T is the appropriate choice due to its 1.65V minimum supply voltage specification.