AT25DF512C-SSHN-T Equivalent & Substitute Parts

Part Overview

The AT25DF512C-SSHN-T is a 512Kbit Serial Peripheral Interface (SPI) FLASH memory IC manufactured by Renesas Electronics Corporation. This non-volatile memory device operates at 104 MHz and is housed in an 8-SOIC surface mount package. The part is currently in active production status with verified programmability through DiGi-Electronics. Finding equivalent or substitute parts may be necessary due to inventory constraints, supply chain considerations, or specific application requirements while maintaining electrical and mechanical compatibility.

Substiute Parts

AT25DF512C-SSHN-T

Renesas Electronics CorporationIn Stock: 4491AT25DF512C-SSHN-T Datasheet

Current PartRFQ

AT25XE512C-SSHN-T

Renesas Electronics CorporationIn Stock: 5037AT25XE512C-SSHN-T Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the AT25DF512C-SSHN-T is permissible with parts that maintain identical or compatible specifications across the following critical parameters:

• Memory capacity: 512Kbit
• Memory organization: 64K x 8
• Interface protocol: SPI
• Clock frequency: 104 MHz
• Supply voltage range: 1.65V ~ 3.6V
• Operating temperature range: -40°C ~ 85°C
• Package configuration: 8-SOIC with 0.154" (3.90mm) width
• Mounting technology: Surface Mount

The AT25XE512C-SSHN-T meets these substitution criteria. Both parts share the same base product family (Renesas AT25 series), identical memory specifications, and compatible electrical characteristics. Variations in write cycle timing do not preclude substitution, as these parameters define performance characteristics rather than functional compatibility.

Parameter Comparison

Engineering Selection Recommendations

Both the AT25DF512C-SSHN-T and AT25XE512C-SSHN-T are active production parts from Renesas Electronics Corporation with full RoHS3 and REACH compliance. The primary distinction between these parts is write cycle timing: the AT25DF512C-SSHN-T offers faster word write performance at 8µs compared to the AT25XE512C-SSHN-T at 12µs, while page write times differ marginally (4.6ms versus 3ms respectively).

Selection between these parts should be based on application-specific write performance requirements. Applications requiring maximum write speed should prioritize the AT25DF512C-SSHN-T. Applications where write cycle timing is non-critical may utilize either part interchangeably. Both parts maintain identical memory capacity, interface protocol, voltage specifications, and thermal operating range, ensuring functional compatibility in standard SPI memory applications.

Frequently Asked Questions (FAQ)

Q: Can AT25XE512C-SSHN-T replace AT25DF512C-SSHN-T in existing designs?

A: Yes. Both parts are electrically and mechanically compatible. They share identical memory capacity (512Kbit), organization (64K x 8), SPI interface, clock frequency (104 MHz), supply voltage range (1.65V ~ 3.6V), operating temperature range (-40°C ~ 85°C), and 8-SOIC package configuration. Write cycle timing differences do not affect functional compatibility.

Q: What are the key differences between these substitute parts?

A: The AT25DF512C-SSHN-T provides faster word write cycles at 8µs versus 12µs for the AT25XE512C-SSHN-T. Page write times are 4.6ms and 3ms respectively. All other electrical and mechanical specifications are identical.

Q: Are both parts suitable for the same PCB layout?

A: Yes. Both parts use identical 8-SOIC surface mount packaging with 0.154" (3.90mm) width. No PCB layout modifications are required for substitution.

Q: Do both parts meet the same compliance standards?

A: Yes. Both AT25DF512C-SSHN-T and AT25XE512C-SSHN-T are RoHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements.

Q: Which part should be selected for new designs?

A: Selection depends on write performance requirements. For applications requiring maximum write speed, use AT25DF512C-SSHN-T. For applications where write timing is not performance-critical, either part is acceptable based on availability and cost considerations.