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AT25DF512C-MAHNGU-T Equivalent & Substitute Parts
Part Overview
The AT25DF512C-MAHNGU-T is a 512Kbit FLASH memory IC manufactured by Renesas Electronics Corporation, designed for SPI interface applications requiring non-volatile data storage. This device operates at 104 MHz clock frequency with a supply voltage range of 1.65V to 3.6V and is housed in an 8-UDFN (2x3) surface mount package with exposed pad. The part is currently in active production status with ROHS3 compliance and unlimited moisture sensitivity level (MSL 1). Substitute parts are identified when equivalent electrical and mechanical specifications are required due to inventory availability, packaging format differences, or specific application constraints.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Memory Size | 512Kbit |
| Memory Organization | 64K x 8 |
| Memory Interface | SPI |
| Clock Frequency | 104 MHz |
| Voltage Supply Range | 1.65V ~ 3.6V |
| Operating Temperature Range | -40°C ~ 85°C |
| Package Type | 8-UDFN (2x3) Exposed Pad |
| Mounting Type | Surface Mount |
| RoHS Status | ROHS3 Compliant |
| MSL Rating | 1 (Unlimited) |
Substitute Part Grouping Explanation
Substitution eligibility for the AT25DF512C-MAHNGU-T is determined by strict equivalence across the following critical parameters: memory capacity (512Kbit), memory organization (64K x 8), interface protocol (SPI), supply voltage range (1.65V ~ 3.6V), operating temperature range (-40°C ~ 85°C), package type (8-UDFN with exposed pad), and compliance certifications (ROHS3, MSL 1).
The identified substitute parts maintain identical memory specifications, interface characteristics, and package geometry. Variations in write cycle timing and packaging format (Tape & Reel versus individual packaging) do not affect functional interchangeability in standard applications. All substitute parts are manufactured by Renesas Electronics Corporation and carry equivalent compliance and reliability ratings.
Parameter Comparison
| Parameter | AT25DF512C-MAHNGU-T | AT25DF512C-MAHN-T | AT25XE512C-MAHN-T |
|---|---|---|---|
| Manufacturer | Renesas Electronics Corporation | Renesas Electronics Corporation | Renesas Electronics Corporation |
| Memory Size | 512Kbit | 512Kbit | 512Kbit |
| Memory Organization | 64K x 8 | 64K x 8 | 64K x 8 |
| Memory Interface | SPI | SPI | SPI |
| Clock Frequency | 104 MHz | 104 MHz | 104 MHz |
| Write Cycle Time - Word | 8µs | 8µs | 12µs |
| Write Cycle Time - Page | 4.6ms | 4.6ms | 3ms |
| Voltage Supply Range | 1.65V ~ 3.6V | 1.65V ~ 3.6V | 1.65V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C | -40°C ~ 85°C | -40°C ~ 85°C |
| Package Type | 8-UDFN (2x3) Exposed Pad | 8-UDFN (2x3) Exposed Pad | 8-UDFN (2x3) Exposed Pad |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| MSL Rating | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
| Product Status | Active | Active | Active |
Engineering Selection Recommendations
All three parts—AT25DF512C-MAHNGU-T, AT25DF512C-MAHN-T, and AT25XE512C-MAHN-T—are active production devices from Renesas Electronics Corporation with ROHS3 compliance and MSL 1 ratings. Selection between these parts should be based on packaging format availability and write cycle performance requirements. The AT25DF512C-MAHNGU-T and AT25DF512C-MAHN-T offer identical write cycle timing (8µs word, 4.6ms page), with the primary difference being packaging format. The AT25XE512C-MAHN-T provides slightly extended word write cycle time (12µs) and reduced page write cycle time (3ms), which may be advantageous in applications with specific timing constraints. All parts maintain equivalent electrical specifications, thermal performance, and compliance certifications.
Frequently Asked Questions (FAQ)
Q: Can AT25DF512C-MAHN-T be used as a direct replacement for AT25DF512C-MAHNGU-T?
A: Yes. Both parts are electrically and mechanically equivalent. The primary difference is packaging format: AT25DF512C-MAHNGU-T uses individual packaging while AT25DF512C-MAHN-T is supplied in Tape & Reel format. PCB footprint and electrical performance are identical.
Q: What are the differences between AT25DF512C-MAHN-T and AT25XE512C-MAHN-T?
A: Both parts share identical memory capacity, organization, interface, voltage range, and temperature specifications. The AT25XE512C-MAHN-T has a longer word write cycle time (12µs versus 8µs) but shorter page write cycle time (3ms versus 4.6ms). Selection depends on application timing requirements.
Q: Are all substitute parts ROHS3 compliant?
A: Yes. All three parts carry ROHS3 compliance certification and MSL 1 (unlimited) moisture sensitivity rating.
Q: Can these parts be used interchangeably in existing designs?
A: Yes, provided the PCB layout accommodates the 8-UDFN (2x3) package with exposed pad. All parts are pin-compatible and electrically equivalent for standard SPI FLASH memory applications.
Q: What is the significance of the exposed pad in the 8-UDFN package?
A: The exposed pad provides thermal and electrical grounding, improving heat dissipation and signal integrity. All substitute parts include this feature.
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