AS4PJ-M3/86A Equivalent & Substitute Parts

Part Overview

The AS4PJ-M3/86A is an avalanche diode manufactured by Vishay General Semiconductor - Diodes Division, operating at 600V DC reverse voltage with 2.4A average rectified current. This component belongs to the eSMP® series and is classified as an active product with ROHS3 compliance. The diode is packaged in TO-277A (SMPC) surface mount configuration and is suitable for applications requiring avalanche protection characteristics with standard recovery speed performance.

Equivalent and substitute parts are identified to address inventory availability, supply chain continuity, or specific application requirements where alternative electrical and mechanical parameters remain within acceptable operating ranges.

Substiute Parts

AS4PJ-M3/86A
Vishay General Semiconductor - Diodes DivisionIn Stock: 1899AS4PJ-M3/86A Datasheet
AS4PJ-M3/86A
Current Part
STTH3R06U
STMicroelectronicsIn Stock: 10135STTH3R06U Datasheet
STTH3R06U
MFR Recommended

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 2.4 A
Voltage - Forward (Vf) (Max) @ If 962 mV @ 2 A mV
Reverse Recovery Time (trr) 1.8 µs
Current - Reverse Leakage @ Vr 10 µA @ 600 V
Operating Temperature - Junction -55 to 175 °C
Mounting Type Surface Mount
Package / Case TO-277, 3-PowerDFN
Technology Avalanche
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the AS4PJ-M3/86A is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The substitute part must maintain a DC reverse voltage (Vr) rating of 600V or greater to ensure equivalent or superior voltage protection capability.

Current Rating Compatibility: The substitute part must support an average rectified current (Io) rating equal to or exceeding 2.4A to handle the intended load without derating.

Forward Voltage Characteristics: Forward voltage drop (Vf) at rated current must be evaluated for thermal and efficiency considerations in the target application.

Recovery Speed Classification: The AS4PJ-M3/86A operates with standard recovery characteristics (>500ns). Substitute parts with faster recovery speeds (≤500ns) are electrically compatible and provide improved switching performance.

Reverse Leakage Current: Leakage current specifications must be reviewed for applications sensitive to standby power consumption or precision circuit requirements.

Mounting and Package Compatibility: Surface mount technology is maintained across all substitute options. Package form factor differences (TO-277A versus SMB) require PCB layout verification.

Compliance and Environmental Status: All substitute parts must maintain ROHS3 compliance and equivalent environmental certifications (REACH Unaffected, EAR99 classification).

Parameter Comparison

Parameter AS4PJ-M3/86A (Main Part) STTH3R06U (Substitute) Notes
Manufacturer Vishay General Semiconductor - Diodes Division STMicroelectronics
Voltage - DC Reverse (Vr) (Max) 600 V 600 V Equivalent rating
Current - Average Rectified (Io) 2.4 A 3 A Substitute rated higher
Voltage - Forward (Vf) (Max) @ If 962 mV @ 2 A 1.7 V @ 3 A Different test conditions
Reverse Recovery Time (trr) 1.8 µs 35 ns Substitute has faster recovery
Current - Reverse Leakage @ Vr 10 µA @ 600 V 3 µA @ 600 V Substitute has lower leakage
Operating Temperature - Junction (Max) 175°C 175°C Equivalent maximum rating
Mounting Type Surface Mount Surface Mount Both surface mount
Package / Case TO-277, 3-PowerDFN DO-214AA, SMB Different package form factors
Technology Avalanche Standard Different diode technology
RoHS Status ROHS3 Compliant ROHS3 Compliant Equivalent compliance
Product Status Active Active Both actively manufactured

Engineering Selection Recommendations

Electrical Compatibility: The STTH3R06U substitute meets the 600V reverse voltage requirement and exceeds the 2.4A current specification with a 3A rating. Both components maintain ROHS3 compliance and equivalent environmental certifications (REACH Unaffected, EAR99 classification).

Technology Consideration: The AS4PJ-M3/86A employs avalanche diode technology, while the STTH3R06U is a standard recovery diode. This technology difference results in significantly faster reverse recovery time (35 ns versus 1.8 µs) and lower reverse leakage current (3 µA versus 10 µA). These characteristics make the STTH3R06U suitable for applications where switching speed and leakage performance are beneficial.

Package Form Factor: The main part uses TO-277A (SMPC) packaging, while the substitute uses SMB (DO-214AA) packaging. PCB layout and thermal management considerations must account for this package difference. Both are surface mount technologies with equivalent moisture sensitivity levels (MSL 1 - Unlimited).

Product Status and Availability: Both components are active products with current manufacturing status, ensuring long-term supply chain viability and technical support availability.

Thermal Performance: Both components specify a maximum junction operating temperature of 175°C, providing equivalent thermal design margins.

Frequently Asked Questions (FAQ)

Q: Can the STTH3R06U directly replace the AS4PJ-M3/86A in my circuit?

A: Electrical substitution is supported based on voltage and current ratings. The 600V reverse voltage and 3A current capability of the STTH3R06U exceed the AS4PJ-M3/86A requirements. However, the different package form factors (TO-277A versus SMB) require PCB layout modification. The faster recovery speed and lower leakage current of the STTH3R06U may improve circuit performance in switching applications.

Q: What is the difference between avalanche and standard recovery diode technology?

A: The AS4PJ-M3/86A uses avalanche technology with standard recovery characteristics (1.8 µs reverse recovery time). The STTH3R06U uses standard diode technology with fast recovery characteristics (35 ns reverse recovery time). Avalanche diodes provide voltage clamping protection, while standard fast recovery diodes prioritize switching speed. Application requirements determine which technology is appropriate.

Q: Are there thermal management differences between these packages?

A: The TO-277A (SMPC) and SMB (DO-214AA) packages have different thermal characteristics and PCB footprints. Thermal design calculations must account for the specific package geometry and thermal resistance values provided in component datasheets.

Q: Do both parts meet the same compliance standards?

A: Yes. Both the AS4PJ-M3/86A and STTH3R06U are ROHS3 compliant, REACH Unaffected, and classified as EAR99 for export control purposes. Both components carry MSL 1 (Unlimited) moisture sensitivity ratings.

Q: What is the impact of the lower reverse leakage current in the STTH3R06U?

A: The STTH3R06U exhibits 3 µA reverse leakage at 600V compared to 10 µA for the AS4PJ-M3/86A. Lower leakage current reduces standby power consumption and is beneficial for precision analog circuits, battery-powered applications, and high-impedance measurement circuits.

Q: Can I use the STTH3R06U in an application designed for avalanche protection?

A: The STTH3R06U is a standard recovery diode without avalanche protection characteristics. If the original design specifically requires avalanche voltage clamping functionality, the STTH3R06U is not suitable. If the application requires only rectification and reverse voltage blocking at 600V with 2.4A or higher current capability, the STTH3R06U is electrically compatible.

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