AS3PM-M3/86A Equivalent & Substitute Parts

Part Overview

The AS3PM-M3/86A is an avalanche diode manufactured by Vishay General Semiconductor - Diodes Division, rated for 1000 V DC reverse voltage with 2.1 A average rectified current. This component is part of the eSMP® series and is designed for surface mount applications in the TO-277A (SMPC) package. The device is currently in active production status with RoHS3 compliance and unlimited moisture sensitivity level (MSL 1).

Equivalent and substitute parts are identified based on matching or exceeding the electrical performance parameters while maintaining compatibility with surface mount assembly processes and thermal operating ranges.

Substiute Parts

AS3PM-M3/86A
Vishay General Semiconductor - Diodes DivisionIn Stock: 781AS3PM-M3/86A Datasheet
AS3PM-M3/86A
Current Part
STTH310S
STMicroelectronicsIn Stock: 17330STTH310S Datasheet
STTH310S
MFR Recommended

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 1000 V
Current - Average Rectified (Io) 2.1 A
Voltage - Forward (Vf) (Max) @ If 920 mV @ 1.5 A mV @ A
Reverse Recovery Time (trr) 1.2 µs
Current - Reverse Leakage @ Vr 10 µA @ 1000 V
Operating Temperature - Junction -55 to 175 °C
Mounting Type Surface Mount -
RoHS Status ROHS3 Compliant -

Substitute Part Grouping Explanation

Substitution of the AS3PM-M3/86A is determined by the following critical electrical and mechanical parameters:

Voltage Rating: The substitute must maintain a minimum DC reverse voltage rating of 1000 V to ensure equivalent circuit protection and reliability in the intended application.

Current Rating: The substitute must support a minimum average rectified current of 2.1 A. Substitutes with higher current ratings (such as 3 A) are acceptable as they provide additional design margin without compromising circuit function.

Forward Voltage: The substitute forward voltage drop must be compatible with circuit design requirements. Variations in forward voltage affect power dissipation and thermal management.

Recovery Characteristics: Recovery speed (standard or fast recovery) and reverse recovery time affect switching performance and electromagnetic interference (EMI) characteristics.

Package and Mounting: Surface mount packages (TO-277A, SMC, DO-214AB) are interchangeable when physical board layout permits. Pin configuration and thermal characteristics must be verified for specific applications.

Compliance and Status: Both the main part and substitute must maintain active product status and equivalent regulatory compliance (RoHS3, REACH, ECCN).

Parameter Comparison

Parameter AS3PM-M3/86A (Main) STTH310S (Substitute) Notes
Manufacturer Vishay General Semiconductor STMicroelectronics Different manufacturers
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V Equivalent
Current - Average Rectified (Io) 2.1 A 3 A Substitute rated higher
Voltage - Forward (Vf) (Max) @ If 920 mV @ 1.5 A 1.7 V @ 3 A Different test conditions
Technology Avalanche Standard Different recovery characteristics
Reverse Recovery Time (trr) 1.2 µs 75 ns Substitute is faster recovery
Current - Reverse Leakage @ Vr 10 µA @ 1000 V 10 µA @ 1000 V Equivalent
Operating Temperature - Junction -55 to 175 °C -40 to 175 °C Main part has lower minimum
Package / Case TO-277, 3-PowerDFN DO-214AB, SMC Different package styles
Product Status Active Active Both in production
RoHS Status ROHS3 Compliant ROHS3 Compliant Equivalent compliance
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) Equivalent

Engineering Selection Recommendations

Voltage and Current Compatibility: The STTH310S substitute meets the 1000 V reverse voltage requirement and exceeds the 2.1 A current requirement with a 3 A rating. This provides additional design margin for transient conditions and thermal cycling.

Recovery Speed Consideration: The STTH310S operates as a fast recovery diode (75 ns trr) compared to the AS3PM-M3/86A standard recovery characteristic (1.2 µs trr). Fast recovery reduces switching losses and EMI generation, which is beneficial in most applications. However, circuit design must account for the different recovery behavior if the application specifically depends on standard recovery characteristics.

Forward Voltage Drop: The STTH310S exhibits higher forward voltage (1.7 V @ 3 A) compared to the AS3PM-M3/86A (920 mV @ 1.5 A). These measurements are taken at different current levels. Circuit designers must evaluate power dissipation impact at the actual operating current of the application.

Package Transition: The AS3PM-M3/86A uses TO-277A (SMPC) packaging while the STTH310S uses SMC (DO-214AB) packaging. Physical board layout modifications may be required. Thermal performance characteristics differ between packages and must be verified for thermal management adequacy.

Temperature Range: The AS3PM-M3/86A supports operation from -55°C to 175°C, while the STTH310S operates from -40°C to 175°C. Applications requiring operation below -40°C junction temperature must retain the AS3PM-M3/86A.

Regulatory Compliance: Both parts maintain ROHS3 compliance, REACH unaffected status, and EAR99 ECCN classification, ensuring equivalent regulatory standing for procurement and deployment.

Frequently Asked Questions (FAQ)

Q: Can the STTH310S directly replace the AS3PM-M3/86A without circuit modification?

A: Electrical substitution is feasible based on voltage and current ratings. However, physical package differences (TO-277A versus SMC) require board layout verification. The faster recovery time (75 ns versus 1.2 µs) and higher forward voltage drop must be evaluated for the specific circuit application to confirm functional equivalence.

Q: What is the significance of the different recovery speeds between these diodes?

A: The AS3PM-M3/86A is a standard recovery diode (1.2 µs), while the STTH310S is a fast recovery diode (75 ns). Fast recovery reduces switching losses and EMI in high-frequency applications. Standard recovery diodes are preferred in low-frequency rectification circuits where recovery speed is not critical. The application frequency and EMI requirements determine which recovery characteristic is appropriate.

Q: Are there thermal management differences between the TO-277A and SMC packages?

A: Yes. The TO-277A (3-PowerDFN) and SMC (DO-214AB) packages have different thermal resistance characteristics and board footprints. Thermal analysis specific to the application circuit board layout is required to ensure adequate heat dissipation at the maximum operating current and ambient temperature.

Q: Does the higher current rating of the STTH310S (3 A versus 2.1 A) affect circuit performance?

A: A higher current rating provides additional design margin and does not negatively affect circuit performance. The diode will operate within its rated specifications at the 2.1 A design current. The higher rating accommodates transient overcurrent conditions and thermal cycling stress without degradation.

Q: What is the impact of the forward voltage difference on power dissipation?

A: Forward voltage drop directly affects power dissipation (P = Vf × I). The STTH310S exhibits higher forward voltage (1.7 V @ 3 A) compared to the AS3PM-M3/86A (920 mV @ 1.5 A). At the application's actual operating current, the power dissipation difference must be calculated to verify thermal management adequacy. Higher dissipation may require enhanced heat sinking or thermal design review.

Q: Can the AS3PM-M3/86A be used in applications requiring operation below -40°C?

A: Yes. The AS3PM-M3/86A supports junction temperatures down to -55°C, while the STTH310S minimum is -40°C. Applications with low-temperature requirements must use the AS3PM-M3/86A or identify alternative substitutes with equivalent low-temperature ratings.

Q: Are both parts equally available for procurement?

A: Inventory levels differ. The STTH310S has significantly higher stock availability (17,310 pcs) compared to the AS3PM-M3/86A (682 pcs). Supply chain considerations may favor the STTH310S for high-volume production or time-sensitive procurement.

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