AS358AP-E1 Equivalent & Substitute Parts

Part Overview

The AS358AP-E1 is a general-purpose operational amplifier manufactured by Diodes Incorporated, configured as a dual-channel integrated circuit in an 8-DIP package. This device is classified as Active product status and is RoHS3 compliant. The AS358AP-E1 serves applications requiring low-cost, general-purpose amplification across industrial and consumer electronics. Substitute parts are identified when equivalent functional performance, package compatibility, and electrical specifications align with application requirements, enabling design flexibility and supply chain alternatives.

Key Parameters

Parameter	Value
Manufacturer Part Number	AS358AP-E1
Manufacturer	Diodes Incorporated
Category	Linear, Amplifiers
Amplifier Type	General Purpose
Number of Circuits	2
Package / Case	8-DIP (0.300", 7.62mm)
Mounting Type	Through Hole
Current - Input Bias	20 nA
Voltage - Input Offset	2 mV
Current - Supply	700µA (x2 Channels)
Current - Output / Channel	40 mA
Voltage - Supply Span (Min)	3 V
Voltage - Supply Span (Max)	36 V
Operating Temperature	-40°C ~ 85°C (TA)
Product Status	Active
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the AS358AP-E1 is determined by alignment across the following critical parameters:

Package Compatibility: All substitute parts must use the 8-DIP (0.300", 7.62mm) through-hole package to ensure direct PCB footprint compatibility.

Dual-Channel Configuration: All substitutes maintain a 2-circuit operational amplifier topology, preserving functional equivalence in dual-channel applications.

Supply Voltage Range: Substitute parts must operate within overlapping supply voltage specifications. The AS358AP-E1 operates from 3 V to 36 V. Substitutes with narrower ranges (such as 5 V to 30 V or 10 V to 30 V) remain compatible in applications utilizing the overlapping voltage window.

Output Current Capability: All substitutes provide minimum 38 mA output current per channel, meeting or exceeding the AS358AP-E1 specification of 40 mA.

Operating Temperature Range: The AS358AP-E1 operates from -40°C to 85°C. Substitutes with identical or extended temperature ranges maintain thermal compatibility.

Electrical Characteristics: Input bias current, input offset voltage, and supply current specifications are provided for each substitute to enable application-specific selection based on noise, precision, and power consumption requirements.

Parameter Comparison

Parameter	AS358AP-E1	LT1208CN8#PBF	MUSES02	SA5532P	TL072BCP
Manufacturer	Diodes Incorporated	Linear Technology	Nisshinbo Micro Devices Inc.	Texas Instruments	Texas Instruments
Amplifier Type	General Purpose	General Purpose	Audio	General Purpose	J-FET
Number of Circuits	2	2	2	2	2
Package / Case	8-DIP (0.300", 7.62mm)	8-DIP (0.300", 7.62mm)	8-DIP (0.300", 7.62mm)	8-DIP (0.300", 7.62mm)	8-DIP (0.300", 7.62mm)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Current - Input Bias	20 nA	4 µA	100 nA	200 nA	65 pA
Voltage - Input Offset	2 mV	1 mV	300 µV	500 µV	2 mV
Current - Supply	700µA (x2 Channels)	7mA (x2 Channels)	8mA	8mA (x2 Channels)	1.4mA (x2 Channels)
Current - Output / Channel	40 mA	40 mA	50 mA	38 mA	Not Specified
Voltage - Supply Span (Min)	3 V	5 V	7 V	10 V	10 V
Voltage - Supply Span (Max)	36 V	30 V	32 V	30 V	30 V
Operating Temperature	-40°C ~ 85°C (TA)	0°C ~ 70°C	-40°C ~ 85°C	-40°C ~ 85°C (TA)	0°C ~ 70°C (TA)
Product Status	Active	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	Not Specified	RoHS Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

LT1208CN8#PBF (Linear Technology): This substitute is suitable for applications requiring higher slew rate (400V/µs) and gain bandwidth product (45 MHz) compared to the AS358AP-E1. The LT1208CN8#PBF operates within a narrower supply voltage range (5 V to 30 V) and reduced operating temperature range (0°C to 70°C), limiting deployment in extended temperature environments. This device is recommended for high-speed signal processing applications where the AS358AP-E1 bandwidth is insufficient.

MUSES02 (Nisshinbo Micro Devices Inc.): This substitute is classified as an audio amplifier and maintains the full operating temperature range of the AS358AP-E1 (-40°C to 85°C). The MUSES02 provides superior output current capability (50 mA per channel) and lower input offset voltage (300 µV). The minimum supply voltage requirement (7 V) restricts use in low-voltage applications below 7 V. This device is suitable for audio and precision signal conditioning applications.

SA5532P (Texas Instruments): This substitute is a general-purpose amplifier with operating temperature range matching the AS358AP-E1 (-40°C to 85°C) and RoHS3 compliance. The SA5532P requires a minimum supply voltage of 10 V, restricting deployment in applications utilizing the AS358AP-E1's 3 V minimum specification. The SA5532P is suitable for applications operating at 10 V or higher supply voltages where general-purpose amplification is required.

TL072BCP (Texas Instruments): This substitute employs J-FET input architecture, providing exceptionally low input bias current (65 pA) compared to the AS358AP-E1 (20 nA). The TL072BCP operates within a narrower supply voltage range (10 V to 30 V) and reduced operating temperature range (0°C to 70°C). This device is recommended for precision instrumentation and low-bias-current applications where the AS358AP-E1 bias current specification is insufficient.

Frequently Asked Questions (FAQ)

Q: Can the LT1208CN8#PBF replace the AS358AP-E1 in a 3 V supply application?

A: No. The LT1208CN8#PBF requires a minimum supply voltage of 5 V and cannot operate at the AS358AP-E1's minimum specification of 3 V. Alternative substitutes must be evaluated for 3 V applications.

Q: Is the MUSES02 suitable for general-purpose amplification applications?

A: The MUSES02 is classified as an audio amplifier. While it maintains dual-channel configuration and 8-DIP package compatibility, applications requiring general-purpose amplification characteristics should prioritize SA5532P or LT1208CN8#PBF.

Q: What is the primary advantage of the TL072BCP over the AS358AP-E1?

A: The TL072BCP provides significantly lower input bias current (65 pA versus 20 nA), making it suitable for high-impedance signal sources and precision instrumentation. However, the TL072BCP requires minimum 10 V supply voltage and operates only to 70°C maximum temperature.

Q: Are all substitute parts RoHS3 compliant?

A: The AS358AP-E1, SA5532P, and TL072BCP are RoHS3 compliant. The MUSES02 is RoHS compliant. The LT1208CN8#PBF RoHS status is not specified in available documentation.

Q: Can substitute parts be used interchangeably on existing PCBs designed for the AS358AP-E1?

A: All substitute parts use identical 8-DIP (0.300", 7.62mm) through-hole packaging and pin configuration, enabling direct PCB footprint compatibility. However, electrical parameter differences (supply voltage range, operating temperature, input bias current, and slew rate) must be evaluated against application requirements before substitution.

Q: Which substitute part provides the lowest power consumption?

A: The TL072BCP provides the lowest supply current at 1.4 mA (x2 Channels), compared to the AS358AP-E1 at 700µA (x2 Channels). For applications prioritizing power efficiency, the TL072BCP is suitable when supply voltage and temperature range requirements are met.

Q: What is the operating temperature limitation for the LT1208CN8#PBF and TL072BCP?

A: Both the LT1208CN8#PBF and TL072BCP operate only to 70°C maximum temperature, compared to the AS358AP-E1 specification of 85°C. Applications requiring operation above 70°C must use the AS358AP-E1, MUSES02, or SA5532P.

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