APT84M50L Equivalent & Substitute Parts Reference

Part Overview

The APT84M50L, manufactured by Microchip Technology, is an N-Channel Power MOSFET in a TO-264 package, specified at 500 V Drain to Source Voltage (Vdss), 84A continuous current (Id), and 65mΩ maximum Rds(on). This device is designed for high-power, through-hole applications. It is currently listed as active and RoHS3 compliant. Identifying alternative models is essential for ensuring supply chain flexibility, design maintenance, and mitigating risks related to stock availability.

Substiute Parts

APT84M50L
Microchip TechnologyIn Stock: 1071APT84M50L Datasheet
APT84M50L
Current Part
IXFK78N50P3
IXYSIn Stock: 985IXFK78N50P3 Datasheet
IXFK78N50P3
Direct
IXFK80N50P
IXYSIn Stock: 3863IXFK80N50P Datasheet
IXFK80N50P
Direct
FDL100N50F
onsemiIn Stock: 6209FDL100N50F Datasheet
FDL100N50F
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IXFB100N50Q3
IXYSIn Stock: 1050IXFB100N50Q3 Datasheet
IXFB100N50Q3
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IXFK80N50Q3
IXYSIn Stock: 944IXFK80N50Q3 Datasheet
IXFK80N50Q3
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Key Parameters

ParameterValue
Manufacturer Part NumberAPT84M50L
CategoryTransistors, FETs, MOSFETs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Vdss (Drain to Source Voltage)500 V
Id (Continuous Drain Current @ 25°C)84A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds(on) (Max) @ Id, Vgs65mΩ @ 42A, 10V
Vgs(th) (Max) @ Id5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs340 nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds13500 pF @ 25V
Power Dissipation (Max)1135W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-264-3, TO-264AA
RoHS StatusROHS3 Compliant
Product StatusActive

Substitute Part Grouping Explanation

Substitute and equivalent parts are grouped strictly by matching product status, category, FET type, technology, voltage and current ratings, drive and gate specifications, power dissipation, thermal operation, package/case, mounting type, and compliance. All compared MOSFETs are N-Channel, 500 V Vdss devices in through-hole TO-264 packages, with comparable Id, Rds(on), Qg, Vgs(max), and power dissipation ratings.

Parameter Comparison

Parameter APT84M50L IXFK78N50P3 IXFK80N50P FDL100N50F IXFB100N50Q3 IXFK80N50Q3
Manufacturer Microchip Technology IXYS IXYS onsemi IXYS IXYS
Category Transistors, FETs, MOSFETs Transistors, FETs, MOSFETs Transistors, FETs, MOSFETs Transistors, FETs, MOSFETs Transistors, FETs, MOSFETs Transistors, FETs, MOSFETs
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vdss (Drain to Source Voltage) 500 V 500 V 500 V 500 V 500 V 500 V
Id (Cont. @ 25°C) 84A (Tc) 78A (Tc) 80A (Tc) 100A (Tc) 100A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds(on) (Max) 65mΩ @ 42A, 10V 68mΩ @ 500mA, 10V 65mΩ @ 40A, 10V 55mΩ @ 50A, 10V 49mΩ @ 50A, 10V 65mΩ @ 40A, 10V
Vgs(th) (Max) 5V @ 2.5mA 5V @ 4mA 5V @ 8mA 5V @ 250µA 6.5V @ 8mA 6.5V @ 8mA
Gate Charge (Qg) (Max) 340 nC @ 10V 147 nC @ 10V 197 nC @ 10V 238 nC @ 10V 255 nC @ 10V 200 nC @ 10V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 13500 pF @ 25V 9900 pF @ 25V 12700 pF @ 25V 12000 pF @ 25V 13800 pF @ 25V 10000 pF @ 25V
Power Dissipation (Max) 1135W (Tc) 1130W (Tc) 1040W (Tc) 2500W (Tc) 1560W (Tc) 1250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-264-3, TO-264AA TO-264-3, TO-264AA TO-264-3, TO-264AA TO-264-3, TO-264AA TO-264-3, TO-264AA TO-264-3, TO-264AA
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Product Status Active Active Active Active Active Active

Engineering Selection Recommendations

All listed alternative N-Channel MOSFETs are active and ROHS3 compliant. Each device offers through-hole mounting with a TO-264-3 or TO-264AA case, and supports international regulatory requirements. For selection in safety- or compliance-critical applications, verify the product status is "Active" and RoHS certification aligns with relevant directives.

Frequently Asked Questions (FAQ)

Q1: What are the primary criteria for selecting a substitute for APT84M50L?
A1: Substitute selection is based on exact or closest matching voltage (Vdss), current (Id), Rds(on), gate parameters, package type, mounting style, and RoHS status.

Q2: Which package types are suitable for substituting APT84M50L?
A2: Only TO-264-3 and TO-264AA through-hole packages, as specified for both APT84M50L and substitute parts.

Q3: Are all substitute parts RoHS compliant and active?
A3: Yes, each listed substitute is ROHS3 Compliant and maintains active product status per provided data.

Q4: Is it required for the mounting type to match between the main part and any substitute?
A4: Yes, mounting type must match exactly as through hole for compatibility.

Q5: How important are electrical parameters such as Rds(on), Id, and Vdss when selecting a substitute?
A5: These are primary selection criteria. Substitute models must present suitable values within the use case limits.

Q6: Are there differences in compliance or certifications between the main and substitute parts?
A6: No differences; all parts listed are ROHS3 compliant and have an "Active" status in the product portfolio.

Q7: Can package variations (TO-264-3 vs TO-264AA) be considered equivalent for mounting?
A7: Only TO-264-3 and TO-264AA are accepted package/case options as per provided parameters for the APT84M50L and substitutes.

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