Equivalent & Substitute Parts Reference for APT80M60J

Part Overview

APT80M60J is an active N-Channel MOSFET manufactured by Microchip Technology, categorized under Transistors, FETs, MOSFETs. It features a 600 V drain-to-source voltage and 84A continuous drain current, optimized for high-power switching applications. The package type is SOT-227-4, miniBLOC (ISOTOP®). It is ROHS3 compliant and available in new, original stock. Identifying equivalent and substitute models is necessary in scenarios involving cross-referencing, supply chain constraints, or multi-sourcing requirements.

Key Parameters

Parameter	APT80M60J
Category	Transistors, FETs, MOSFETs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	84A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	55mOhm @ 60A, 10V
Vgs(th) (Max) @ Id	5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs	600 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	24000 pF @ 25 V
Power Dissipation (Max)	960W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	ISOTOP®
Package / Case	SOT-227-4, miniBLOC
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095

Substitute Part Grouping Explanation

Substitute parts are identified strictly based on matching electrical and mechanical parameters within the same product category. For the APT80M60J MOSFET, the following parameters must align for direct substitution: FET type (N-Channel), Technology (MOSFET), Drain to Source Voltage (Vdss), Drive Voltage, Maximum Rds On, Maximum Gate Charge, Maximum Vgs, Package / Case, RoHS status, MSL, REACH Status, ECCN, and mounting type. Only the provided substitute part IXFN110N60P3 meets these criteria within the parameters supplied in the input.

Parameter Comparison

Parameter	APT80M60J (Microchip)	IXFN110N60P3 (IXYS)
Category	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V	600 V
Current - Continuous Drain (Id) @ 25°C	84A (Tc)	90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	10V
Rds On (Max) @ Id, Vgs	55mOhm @ 60A, 10V	56mOhm @ 55A, 10V
Vgs(th) (Max) @ Id	5V @ 5mA	5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs	600 nC @ 10 V	245 nC @ 10 V
Vgs (Max)	±30V	±30V
Input Capacitance (Ciss) (Max) @ Vds	24000 pF @ 25 V	18000 pF @ 25 V
Power Dissipation (Max)	960W (Tc)	1500W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Chassis Mount	Chassis Mount
Supplier Device Package	ISOTOP®	SOT-227B
Package / Case	SOT-227-4, miniBLOC	SOT-227-4, miniBLOC
RoHS Status	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected
ECCN	EAR99	EAR99
HTSUS	8541.29.0095	8541.29.0095

Engineering Selection Recommendations

Both APT80M60J and IXFN110N60P3 are classified as active components and are RoHS3 compliant, REACH unaffected, with an MSL rating of 1 (Unlimited). Both models conform to the same ECCN and HTSUS codes. Selection should be based on current product status (Active) and regulatory compliance as provided.

Frequently Asked Questions (FAQ)

Q1: What are the key substitution criteria for APT80M60J MOSFETs?
A1: Substitute suitability is determined by identical FET type, technology, drain-to-source voltage, drive voltage, maximum Rds On, Vgs (max), operating temperature range, chassis mount type, package compatibility, and compliance statuses.

Q2: Is IXFN110N60P3 compatible with SOT-227-4, miniBLOC packages?
A2: Based on the provided parameters, both APT80M60J and IXFN110N60P3 use the SOT-227-4, miniBLOC case style.

Q3: Are both devices compliant with RoHS3 and REACH?
A3: According to the supplied information, both APT80M60J and IXFN110N60P3 are RoHS3 compliant and REACH unaffected.

Q4: What must be considered regarding mounting type during substitution?
A4: Both components are designated for chassis mount, per the provided data.

Q5: What is the allowed operating temperature range for these substitutes?
A5: Both MOSFETs are rated for an operating junction temperature of -55°C to 150°C (TJ), meeting the requirement for similar application environments.

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