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Equivalent & Substitute Parts Reference for APT80F60J
Part Overview
The Microchip Technology APT80F60J is an N-Channel Power MOSFET specified for 600 V drain-source voltage and a continuous drain current of 84A (Tc). The device is presented in a chassis-mount ISOTOP® (SOT-227-4, miniBLOC) package, with a maximum power dissipation of 961W. APT80F60J is classified in the Transistors, FETs, MOSFETs category, and its product status is Active with ROHS3 compliance. When selecting alternative or equivalent models, strict matching of electrical and mechanical parameters is necessary to maintain compatibility and system reliability.
Substiute Parts
Key Parameters
| Parameter | APT80F60J |
|---|---|
| Manufacturer | Microchip Technology |
| Category | Transistors, FETs, MOSFETs |
| Description | MOSFET N-CH 600V 84A ISOTOP |
| Series | POWER MOS 8™ |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 84A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 60A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 598 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 23994 pF @ 25 V |
| Power Dissipation (Max) | 961W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Supplier Device Package | ISOTOP® |
| Package / Case | SOT-227-4, miniBLOC |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
Substitute Part Grouping Explanation
Substitution logic is based solely on the parameters explicitly provided for APT80F60J and its listed substitute IXFN110N60P3. Parts in this category must match in FET type (N-Channel MOSFET), voltage rating (Vdss), current rating (Id @ 25°C), Rds On, gate threshold voltage (Vgs(th)), maximum gate charge (Qg), maximum gate-source voltage (Vgs), input capacitance (Ciss), maximum power dissipation, operating temperature range, mounting type, and supplied package/case. Compliance data including RoHS and REACH status, as well as product status (Active), must also align for valid substitutions.
Key substitution parameters:
- MOSFET type: N-Channel
- Voltage and current ratings
- Rds On, Vgs(th), and Qg
- Package/case compatibility
- Mounting type
- Compliance and product status
Parameter Comparison
| Parameter | APT80F60J | IXFN110N60P3 |
|---|---|---|
| Manufacturer | Microchip Technology | IXYS |
| Category | Transistors, FETs, MOSFETs | Transistors, FETs, MOSFETs |
| Description | MOSFET N-CH 600V 84A ISOTOP | MOSFET N-CH 600V 90A SOT227B |
| Product Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 84A (Tc) | 90A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 60A, 10V | 56mOhm @ 55A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA | 5V @ 8mA |
| Gate Charge (Qg) (Max) @ Vgs | 598 nC @ 10 V | 245 nC @ 10 V |
| Vgs (Max) | ±30V | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 23994 pF @ 25 V | 18000 pF @ 25 V |
| Power Dissipation (Max) | 961W (Tc) | 1500W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount | Chassis Mount |
| Supplier Device Package | ISOTOP® | SOT-227B |
| Package / Case | SOT-227-4, miniBLOC | SOT-227-4, miniBLOC |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
| REACH Status | REACH Unaffected | REACH Unaffected |
| ECCN | EAR99 | EAR99 |
Engineering Selection Recommendations
Selection between APT80F60J and IXFN110N60P3 can be made according to the indicated product status (Active) and compliance information (ROHS3 Compliant, REACH Unaffected, MSL 1). Both parts are categorized under ECCN EAR99 and share identical mounting type and package/case specifications. All relevant provided certifications are met for both parts.
Frequently Asked Questions (FAQ)
Q1: What electrical parameters must match for substituting MOSFETs in this category?
A1: Substitution is based strictly on FET type, voltage rating (Vdss), current rating (Id), Rds On, gate threshold voltage (Vgs(th)), gate charge (Qg), input capacitance (Ciss), and operating temperature range.
Q2: Is package compatibility a requirement for substitution?
A2: Yes. Both APT80F60J and IXFN110N60P3 share the SOT-227-4, miniBLOC package type and chassis mount configuration, which is required for mechanical compatibility.
Q3: What compliance information is necessary for selection?
A3: For engineering substitution, both parts must be ROHS3 Compliant, REACH Unaffected, and have an ECCN of EAR99 with identical moisture sensitivity levels.
Q4: Can product status affect substitute selection?
A4: Only Active product status is considered suitable for direct substitution based on the provided data.
Q5: How do I compare substitute parts for system compatibility?
A5: Review and match all key electrical, mechanical, and compliance parameters provided, as summarized in the parameter comparison table. Package, voltage, current, and regulatory compliance must be strictly matched as per the input data.
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