Equivalent & Substitute Parts for APT8030LVRG

Part Overview

APT8030LVRG is a power MOSFET from Microchip Technology, classified under Transistors, FETs, MOSFETs. It is an N-Channel device rated at 800 V and 27A (Tc), offered in a through-hole TO-264 package. The product status is Active, with inventory available. Engineers seek alternative or equivalent models to ensure continued production flexibility, maintain inventory reliability, and support qualification processes for designs requiring these specific electrical and mechanical characteristics.

Key Parameters

Manufacturer Part Number	Category	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Supplier Device Package	Package / Case	RoHS Status	Moisture Sensitivity Level (MSL)	REACH Status	Product Status
APT8030LVRG	Transistors, FETs, MOSFETs	N-Channel	800 V	27A (Tc)	300mOhm @ 500mA, 10V	4V @ 2.5mA	510 nC @ 10 V	7900 pF @ 25 V	Through Hole	TO-264 [L]	TO-264-3, TO-264AA	ROHS3 Compliant	1 (Unlimited)	REACH Unaffected	Active

Substitute Part Grouping Explanation

Substitute parts for APT8030LVRG must strictly match the key electrical and mechanical parameters: FET Type (N-Channel), category, Drain to Source Voltage (800V), Continuous Drain Current (27A), Rds On (≤ 320 mOhm at 500mA, 10V), package type (TO-264-3, TO-264AA, Through Hole), ROHS status, and MSL rating. Only devices meeting these specified parameters without deviation are included as substitutes.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Category	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Supplier Device Package	Package / Case	RoHS Status	Moisture Sensitivity Level (MSL)	REACH Status	Product Status
APT8030LVRG	Microchip Technology	Transistors, FETs, MOSFETs	N-Channel	800 V	27A (Tc)	300mOhm @ 500mA, 10V	4V @ 2.5mA	510 nC @ 10 V	7900 pF @ 25 V	Through Hole	TO-264 [L]	TO-264-3, TO-264AA	ROHS3 Compliant	1 (Unlimited)	REACH Unaffected	Active
IXFK27N80Q	IXYS	Transistors, FETs, MOSFETs	N-Channel	800 V	27A (Tc)	320mOhm @ 500mA, 10V	4.5V @ 4mA	170 nC @ 10 V	7600 pF @ 25 V	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA	ROHS3 Compliant	1 (Unlimited)	REACH Unaffected	Active

Engineering Selection Recommendations

Both APT8030LVRG and IXFK27N80Q are marked as Active and have current ROHS3 and REACH compliance, with an unlimited Moisture Sensitivity Level (MSL 1). Package and category alignment allow direct mechanical and compliance substitution when required by inventory or qualification constraints.

Frequently Asked Questions (FAQ)

Q1: What parameters ensure substitute compatibility for these MOSFETs?
A1: Substitute compatibility is ensured by matching FET Type, Drain to Source Voltage, Continuous Drain Current, Rds On, package style, mounting type, RoHS compliance, MSL rating, and product status.

Q2: Is the package/case of IXFK27N80Q equivalent to APT8030LVRG for board layout?
A2: Both models offer TO-264-3, TO-264AA package/case types and through-hole mounting, enabling equivalent mechanical fit.

Q3: Are there differences in regulatory compliance between the listed substitutes?
A3: Both parts are ROHS3 Compliant, REACH Unaffected, and classified with MSL 1 (Unlimited), aligning compliance requirements.

Q4: Can the substitute be used without changes to the PCB footprint?
A4: Each part specifies TO-264 package compatibility with through-hole mounting. Verify mechanical datasheet dimensions to confirm footprint alignment.

Q5: How is electrical compatibility maintained between these substitute MOSFETs?
A5: Electrical compatibility is maintained by matching Drain to Source Voltage, Continuous Drain Current, maximum Rds On, and FET Type as specified in the parameter table.

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