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APT8024LFLLG Equivalent & Substitute Parts Reference
Part Overview
The APT8024LFLLG is an N-Channel MOSFET manufactured by Microchip Technology, categorized under Transistors, FETs, MOSFETs. It features an 800 V drain-to-source voltage, 31A continuous drain current, and comes in a TO-264 [L] package for through-hole mounting. The device is designated as active and compliant with ROHS3 and REACH standards. Sourcing alternative models is necessary to ensure design flexibility, ongoing supply, and to meet requirements for identical function, electrical capability, and package compatibility within the same product category.
Substiute Parts
Key Parameters
| Parameter | APT8024LFLLG |
|---|---|
| Manufacturer | Microchip Technology |
| Category | Transistors, FETs, MOSFETs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 260mOhm @ 15.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 4670 pF @ 25 V |
| Power Dissipation (Max) | 565W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-264-3, TO-264AA |
| RoHS Status | ROHS3 Compliant |
| REACH Status | REACH Unaffected |
| MSL | 1 (Unlimited) |
Substitute Part Grouping Explanation
Substitute selection is strictly determined by a match in the following key parameters: FET type, technology, drain-to-source voltage (Vdss), continuous drain current (Id), maximum Rds(on), gate threshold voltage range (Vgs(th)), maximum gate charge (Qg), maximum gate-source voltage (Vgs), input capacitance (Ciss), power dissipation, operating temperature, mounting type, and package/case. Substitutes must also match compliance certifications (ROHS, REACH) and moisture sensitivity level.
Parameter Comparison
| Parameter | APT8024LFLLG (Microchip Technology) | IXFK32N80Q3 (IXYS) |
|---|---|---|
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 260mOhm @ 15.5A, 10V | 270mOhm @ 16A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA | 6.5V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V | 140 nC @ 10 V |
| Vgs (Max) | ±30V | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 4670 pF @ 25 V | 6940 pF @ 25 V |
| Power Dissipation (Max) | 565W (Tc) | 1000W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Package / Case | TO-264-3, TO-264AA | TO-264-3, TO-264AA |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
| REACH Status | REACH Unaffected | REACH Unaffected |
| MSL | 1 (Unlimited) | 1 (Unlimited) |
Engineering Selection Recommendations
Both APT8024LFLLG and IXFK32N80Q3 are designated as active, are ROHS3 compliant, have unaffected REACH status, and are classified as moisture sensitivity level 1 (unlimited). The substitute part IXFK32N80Q3 is therefore eligible for selection under compliance and product status considerations.
Frequently Asked Questions (FAQ)
Q1: What criteria are used to determine if a substitute MOSFET is compatible with APT8024LFLLG?
A1: Only MOSFETs with matching FET type, technology, drain-to-source voltage, continuous drain current, maximum Rds(on), gate-source voltage range, input capacitance, power dissipation, thermal range, mounting type, package, and compliance status are considered compatible.
Q2: Is the package for IXFK32N80Q3 identical to APT8024LFLLG?
A2: Both parts utilize a TO-264-3, TO-264AA package and support through-hole mounting; this ensures mechanical and assembly compatibility.
Q3: Are the compliance and product lifecycle statuses the same between the main part and substitute?
A3: Both APT8024LFLLG and IXFK32N80Q3 are active products, are ROHS3 compliant, have REACH unaffected status, and meet MSL 1 requirements.
Q4: Why is matching input capacitance (Ciss) and gate charge (Qg) relevant in substitutions?
A4: These parameters ensure similar gate drive requirements and switching characteristics, which is essential for functional equivalency in MOSFET applications.
Q5: Can the substitute part be used in applications with the same thermal and mechanical constraints?
A5: Both devices are rated for -55°C to 150°C operating temperature and have compatible power dissipation and package dimensions, permitting use in identical environmental and mounting scenarios based on provided data.
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