APT7M120S Equivalent & Substitute Parts

Part Overview

The APT7M120S is an N-Channel 1200 V MOSFET manufactured by Microchip Technology, rated for 8A continuous drain current at 25°C with a maximum power dissipation of 335W. This device is housed in a D3Pak surface mount package and is classified as Active product status. The APT7M120S is part of the POWER MOS 8™ series and is ROHS3 compliant with unlimited moisture sensitivity level (MSL 1).

Equivalent and substitute parts are identified when alternative MOSFETs share the same critical electrical specifications—specifically drain-to-source voltage rating, gate drive voltage, operating temperature range, and mounting technology—while maintaining functional compatibility in circuit applications. Substitutes may differ in continuous drain current, on-state resistance, or power dissipation within acceptable design margins.

Substiute Parts

APT7M120S

Microchip TechnologyIn Stock: 911APT7M120S Datasheet

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IXTT6N120

IXYSIn Stock: 1377IXTT6N120 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the APT7M120S are identified based on the following critical electrical and mechanical parameters:

Primary Matching Criteria:

• Drain to Source Voltage (Vdss): 1200 V (exact match required)
• Gate Drive Voltage: 10 V (standard drive voltage)
• Operating Temperature Range: -55°C to 150°C (exact match required)
• Mounting Type: Surface Mount
• Technology: N-Channel MOSFET (Metal Oxide)

Secondary Compatibility Parameters:

• Continuous Drain Current (Id): Substitutes may operate at lower current ratings if circuit design permits
• On-State Resistance (Rds On): Substitutes with higher Rds On values are acceptable if thermal and power dissipation requirements are met
• Gate Charge (Qg): Variations acceptable within switching frequency constraints
• Input Capacitance (Ciss): Variations acceptable within gate drive circuit design limits
• Maximum Gate Voltage (Vgs): Substitutes with lower Vgs (Max) ratings are acceptable if gate drive voltage remains within limits

The IXTT6N120 qualifies as a substitute based on matching Vdss (1200 V), gate drive voltage (10 V), operating temperature range (-55°C to 150°C), and surface mount technology. The IXTT6N120 operates at 6A continuous drain current compared to the APT7M120S at 8A, and exhibits higher Rds On (2.6 Ohm vs. 2.1 Ohm) and lower power dissipation (300W vs. 335W).

Parameter Comparison

Engineering Selection Recommendations

APT7M120S (Primary Selection)

The APT7M120S is the primary component specification. It is Active product status with ROHS3 compliance, REACH unaffected status, and unlimited moisture sensitivity level (MSL 1). This device provides 8A continuous drain current at 25°C with 2.1 Ohm maximum on-state resistance and 335W maximum power dissipation. The APT7M120S supports ±30V maximum gate voltage and operates across the full -55°C to 150°C temperature range.

IXTT6N120 (Substitute Selection)

The IXTT6N120 is a qualified substitute for applications where the reduced continuous drain current rating (6A vs. 8A) and increased on-state resistance (2.6 Ohm vs. 2.1 Ohm) are acceptable within circuit design constraints. The IXTT6N120 is Active product status with ROHS3 compliance, REACH unaffected status, and unlimited moisture sensitivity level (MSL 1). Both devices share identical drain-to-source voltage (1200 V), gate drive voltage (10 V), and operating temperature range (-55°C to 150°C).

Substitution Constraints:

The IXTT6N120 exhibits lower maximum gate voltage (±20V vs. ±30V) and lower input capacitance (1950 pF vs. 2565 pF). Gate charge is reduced (56 nC vs. 80 nC), resulting in faster switching characteristics. Power dissipation is lower (300W vs. 335W), which may require thermal design review in high-power applications.

Both devices are surface mount technology with compatible D3Pak/D2PAK and TO-268AA/D³Pak package families, enabling direct footprint compatibility in most circuit layouts.

Frequently Asked Questions (FAQ)

Q: Can the IXTT6N120 directly replace the APT7M120S in all applications?

A: The IXTT6N120 is a functional substitute when circuit design accommodates the reduced continuous drain current (6A vs. 8A) and increased on-state resistance (2.6 Ohm vs. 2.1 Ohm). Applications operating below 6A continuous current and tolerating higher conduction losses are suitable for substitution. Thermal analysis is required for high-power applications due to lower maximum power dissipation (300W vs. 335W).

Q: What are the key electrical differences between these devices?

A: Both devices share 1200 V drain-to-source voltage rating, 10 V gate drive voltage, and -55°C to 150°C operating temperature range. The APT7M120S provides higher continuous drain current (8A vs. 6A), lower on-state resistance (2.1 Ohm vs. 2.6 Ohm), and higher power dissipation capability (335W vs. 300W). The IXTT6N120 features lower gate charge (56 nC vs. 80 nC) and lower input capacitance (1950 pF vs. 2565 pF), enabling faster switching response.

Q: Are the packages physically compatible?

A: Both devices use surface mount D3Pak/D2PAK technology. The APT7M120S is specified as TO-263-3 D2PAK, while the IXTT6N120 is specified as TO-268-3 D³Pak. These package families are mechanically and electrically compatible for PCB footprint purposes, though pin-to-pin verification is required for specific circuit board layouts.

Q: What compliance certifications apply to both devices?

A: Both the APT7M120S and IXTT6N120 are ROHS3 compliant, REACH unaffected, and classified under ECCN EAR99. Both devices carry unlimited moisture sensitivity level (MSL 1), eliminating bake-out requirements for standard storage and handling conditions.

Q: How does gate charge affect circuit performance?

A: The IXTT6N120 exhibits lower gate charge (56 nC vs. 80 nC), requiring less charge transfer from the gate driver circuit. This results in faster switching transitions and reduced gate drive power consumption. Gate driver circuits designed for the APT7M120S will operate the IXTT6N120 with improved switching speed characteristics.

Q: What thermal considerations apply when substituting these devices?

A: The APT7M120S supports higher maximum power dissipation (335W vs. 300W). Applications requiring sustained high-power operation should evaluate thermal management requirements when substituting the IXTT6N120. On-state resistance difference (2.1 Ohm vs. 2.6 Ohm) results in approximately 24% higher conduction losses at equivalent current levels.

Q: Are gate voltage ratings compatible?

A: The APT7M120S supports ±30V maximum gate voltage, while the IXTT6N120 supports ±20V maximum gate voltage. Gate driver circuits must remain within ±20V for IXTT6N120 substitution. Standard gate drive circuits operating at ±15V or lower are compatible with both devices.