Equivalent & Substitute Parts for APT7F100B

Part Overview

The APT7F100B is an N-channel MOSFET produced by Microchip Technology. It features a drain-to-source voltage of 1000 V, a continuous drain current of 7A (Tc), and a TO-247 [B] through-hole package. The MOSFET is classified under "Transistors, FETs, MOSFETs", with the product status listed as Active and RoHS3 compliant. Identifying suitable substitutes or equivalents is essential in maintaining design flexibility, ensuring procurement resilience, and accommodating supply chain variability in applications demanding identical or closely matching electrical and mechanical parameters.

Key Parameters

Parameter	APT7F100B (Main Part)
Category	Transistors, FETs, MOSFETs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000 V
Current - Continuous Drain (Id) @ 25°C	7A (Tc)
Rds On (Max) @ Id, Vgs	2Ω @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs(th) (Max) @ Id	5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	58 nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1800 pF @ 25V
Power Dissipation (Max)	290W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247 [B]
RoHS Status	ROHS3 Compliant
Product Status	Active

Substitute Part Grouping Explanation

Substitute and equivalent parts for the APT7F100B are determined strictly by matching key electrical and mechanical parameters within the "Transistors, FETs, MOSFETs" category. The primary parameters evaluated include:

FET Type
Technology
Drain to Source Voltage (Vdss)
Continuous Drain Current (Id)
Rds On (Max) @ Id, Vgs
Drive Voltage
Gate Charge (Qg)
Maximum Vgs
Input Capacitance (Ciss)
Power Dissipation
Operating Temperature
Mechanical package and mounting type
RoHS and regulatory compliance

Parts are considered suitable substitutes only if the above criteria are aligned according to industry-defined tolerance for equivalent substitution.

Parameter Comparison

Parameter	APT7F100B (Microchip Technology)	IXFH6N120 (IXYS)	IXFH6N120P (IXYS)	STW7N105K5 (STMicroelectronics)
Category	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000 V	1200 V	1200 V	1050 V
Current - Continuous Drain (Id) @ 25°C	7A (Tc)	6A (Tc)	6A (Tc)	4A (Tc)
Rds On (Max) @ Id, Vgs	2Ω @ 4A, 10V	2.6Ω @ 3A, 10V	2.4Ω @ 500mA, 10V	2Ω @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On)	10V	10V	10V	10V
Vgs(th) (Max) @ Id	5V @ 500µA	5V @ 2.5mA	5V @ 1mA	5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	58 nC @ 10V	56 nC @ 10V	92 nC @ 10V	17 nC @ 10V
Vgs (Max)	±30V	±20V	±30V	±30V
Input Capacitance (Ciss) (Max) @ Vds	1800 pF @ 25V	1950 pF @ 25V	2830 pF @ 25V	380 pF @ 100V
Power Dissipation (Max)	290W (Tc)	300W (Tc)	250W (Tc)	110W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Supplier Device Package	TO-247 [B]	TO-247AD (IXFH)	TO-247AD (IXFH)	TO-247-3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Active	Active	Active	Active

Engineering Selection Recommendations

All listed substitute MOSFETs, including IXFH6N120, IXFH6N120P, and STW7N105K5, are categorized as active products and are RoHS3 compliant, ensuring environmental and regulatory adherence. The moisture sensitivity level is MSL 1 (unlimited) and REACH status is unaffected for all parts provided. Selection among these equivalents should only be based on these compliance and status criteria, as no additional technical filtering is permitted within this scope.

Frequently Asked Questions (FAQ)

Q1: What criteria are used to determine if a MOSFET is an equivalent substitute for APT7F100B?
A1: Only explicit electrical and mechanical parameters are considered, including FET type, technology, Vdss, Id, Rds On, drive voltage, Vgs(th), gate charge, input capacitance, maximum power dissipation, operating temperature, package, mounting type, RoHS status, and product status.

Q2: Are the substitute parts provided in the same package and mounting style as APT7F100B?
A2: Yes, all listed substitutes utilize industry-standard TO-247-3 or TO-247 variants and are through-hole components, matching the mechanical interface of the APT7F100B.

Q3: Do the substitute MOSFETs have compliance with RoHS and REACH?
A3: All substitute parts, as well as the main part, are ROHS3 compliant and REACH unaffected.

Q4: Are there functional or performance differences between the APT7F100B and its substitutes?
A4: Only parameters provided in the input have been considered. The comparison table above lists all parameter differences as given.

Q5: How to ensure compatibility in existing designs?
A5: Review all parameters listed in the comparison table for alignment with application requirements, focusing on mechanical package and specified electrical characteristics. Only parameters explicitly provided have been compared for compatibility.

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