APT75M50B2 Equivalent & Substitute Parts

Part Overview

The APT75M50B2 is an N-Channel MOSFET manufactured by Microchip Technology, rated for 500V drain-to-source voltage with 75A continuous drain current at 25°C. This device is housed in a TO-247-3 variant package (T-MAX™) and is designed for through-hole mounting applications requiring high-power switching capability. The part is currently in active product status with 961 units in stock.

Substitute parts are necessary when the primary device is unavailable, when design requirements demand alternative thermal or electrical characteristics, or when supply chain considerations require qualified alternatives from different manufacturers. The IXYS HiPerFET™ series devices listed below provide equivalent voltage ratings and comparable current-handling capabilities within the same package family.

Substiute Parts

APT75M50B2
Microchip TechnologyIn Stock: 1003APT75M50B2 Datasheet
APT75M50B2
Current Part
IXFR64N50Q3
IXYSIn Stock: 698IXFR64N50Q3 Datasheet
IXFR64N50Q3
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IXFR80N50Q3
IXYSIn Stock: 7081IXFR80N50Q3 Datasheet
IXFR80N50Q3
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IXFX64N50Q3
IXYSIn Stock: 1145IXFX64N50Q3 Datasheet
IXFX64N50Q3
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IXFX78N50P3
IXYSIn Stock: 838IXFX78N50P3 Datasheet
IXFX78N50P3
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Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 500 V
Continuous Drain Current (Id) @ 25°C 75 A (Tc)
On-State Resistance (Rds On Max) @ 37A, 10V 75 mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 2.5mA 5 V
Gate Charge (Qg Max) @ 10V 290 nC
Input Capacitance (Ciss Max) @ 25V 11600 pF
Power Dissipation (Max) 1040 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type TO-247-3 Variant
Mounting Type Through Hole
Gate Drive Voltage 10 V
Maximum Gate Voltage (Vgs Max) ±30 V

Substitute Part Grouping Explanation

Substitution eligibility for the APT75M50B2 is determined by the following critical parameters:

Mandatory Matching Criteria:

  • Drain-to-Source Voltage (Vdss): 500V (exact match required)
  • Package Type: TO-247-3 or TO-247-3 Variant (mechanical and thermal compatibility)
  • Mounting Type: Through Hole (board-level compatibility)
  • Gate Drive Voltage: 10V (circuit interface compatibility)
  • Maximum Gate Voltage (Vgs Max): ±30V (gate circuit protection)
  • Operating Temperature Range: -55°C to 150°C (thermal envelope)
  • FET Type: N-Channel (functional equivalence)
  • Technology: MOSFET Metal Oxide (device class)

Allowable Variation Parameters:

  • Continuous Drain Current (Id): Substitute parts may have lower current ratings (45A, 50A, 64A, 78A) provided the application does not require the full 75A specification
  • On-State Resistance (Rds On): Variation permitted based on current rating; lower resistance at equivalent current levels indicates superior performance
  • Gate Charge (Qg): Variation permitted; lower values indicate faster switching characteristics
  • Input Capacitance (Ciss): Variation permitted; affects gate drive requirements
  • Power Dissipation: Variation permitted; lower values indicate reduced thermal load

All substitute parts listed below meet the mandatory matching criteria and are qualified alternatives for applications where the specified current rating is not exceeded.

Parameter Comparison

Parameter APT75M50B2 (Microchip) IXFX78N50P3 (IXYS) IXFX64N50Q3 (IXYS) IXFR80N50Q3 (IXYS) IXFR64N50Q3 (IXYS)
Manufacturer Microchip Technology IXYS IXYS IXYS IXYS
Vdss (V) 500 500 500 500 500
Id @ 25°C (A Tc) 75 78 64 50 45
Rds On Max @ 10V (mOhm) 75 @ 37A 68 @ 500mA 85 @ 32A 72 @ 40A 95 @ 32A
Vgs(th) Max (V) 5 @ 2.5mA 5 @ 4mA 6.5 @ 4mA 6.5 @ 8mA 6.5 @ 4mA
Qg Max @ 10V (nC) 290 147 145 200 145
Ciss Max @ 25V (pF) 11600 9900 6950 10000 6950
Power Dissipation Max (W Tc) 1040 1130 1000 570 500
Operating Temperature (°C TJ) -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
Package Type TO-247-3 Variant (T-MAX™) TO-247-3 Variant (PLUS247™-3) TO-247-3 Variant (PLUS247™-3) TO-247-3 (ISOPLUS247™) TO-247-3 (ISOPLUS247™)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Vgs Max (V) ±30 ±30 ±30 ±30 ±30
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected REACH Unaffected REACH Unaffected
Inventory Status 961 Pcs New Original In Stock 805 Pcs New Original In Stock 1047 Pcs New Original In Stock 6996 Pcs New Original In Stock 657 Pcs New Original In Stock

Engineering Selection Recommendations

Primary Selection: APT75M50B2

The APT75M50B2 remains the primary choice for applications requiring the full 75A continuous drain current specification. This device offers the highest current rating among the listed parts and is suitable for high-power switching applications within the 500V class. The part is in active product status with adequate inventory (961 units) and carries full RoHS3 compliance and REACH unaffected status.

Tier 1 Substitute: IXFX78N50P3

The IXFX78N50P3 from IXYS provides the closest performance match to the APT75M50B2, with a 78A continuous drain current rating that exceeds the primary device specification. This part features lower gate charge (147 nC vs. 290 nC) and reduced input capacitance (9900 pF vs. 11600 pF), resulting in faster switching characteristics. Power dissipation capability (1130W) exceeds the primary device (1040W). The IXFX78N50P3 is in active product status with 805 units in stock and meets all compliance requirements (RoHS3, REACH unaffected).

Tier 2 Substitute: IXFX64N50Q3

The IXFX64N50Q3 provides a 64A continuous drain current rating, suitable for applications where current requirements do not exceed this level. This device offers significantly lower gate charge (145 nC) and input capacitance (6950 pF) compared to the primary device, enabling faster gate switching. Power dissipation (1000W) is comparable to the primary device. The part is in active product status with 1047 units in stock and meets all compliance requirements.

Tier 3 Substitute: IXFR80N50Q3

The IXFR80N50Q3 provides a 50A continuous drain current rating and is suitable for applications with moderate current requirements. This device features lower on-state resistance (72 mOhm @ 40A) and reduced gate charge (200 nC). The part is in active product status with the highest inventory availability (6996 units) among all listed substitutes and meets all compliance requirements. Power dissipation (570W) is lower than the primary device.

Tier 4 Substitute: IXFR64N50Q3

The IXFR64N50Q3 provides a 45A continuous drain current rating and is suitable for lower-current applications. This device features the lowest input capacitance (6950 pF) and gate charge (145 nC) among all listed parts, enabling the fastest switching response. Power dissipation (500W) is the lowest among all listed devices. The part is in active product status with 657 units in stock and meets all compliance requirements.

Compliance and Regulatory Status

All listed parts carry identical compliance certifications: RoHS3 compliant, REACH unaffected, MSL 1 (Unlimited), and ECCN EAR99 classification. All parts are suitable for applications requiring regulatory compliance in industrial, automotive, and consumer electronics markets.

Frequently Asked Questions (FAQ)

Q: Can IXFX78N50P3 be used as a direct replacement for APT75M50B2?

A: The IXFX78N50P3 is mechanically and electrically compatible with the APT75M50B2. Both devices share identical 500V Vdss rating, TO-247-3 package family, through-hole mounting, and ±30V gate voltage specification. The IXFX78N50P3 provides higher current capability (78A vs. 75A) and superior switching characteristics due to lower gate charge and input capacitance. No circuit modifications are required for substitution.

Q: What is the difference between PLUS247™-3 and ISOPLUS247™ packages?

A: Both PLUS247™-3 and ISOPLUS247™ are TO-247-3 variant packages designed for through-hole mounting. The primary difference lies in internal isolation and thermal characteristics. PLUS247™-3 (used in IXFX78N50P3 and IXFX64N50Q3) and ISOPLUS247™ (used in IXFR80N50Q3 and IXFR64N50Q3) are mechanically interchangeable in standard TO-247-3 footprints. Thermal performance may vary slightly between variants; consult device datasheets for specific thermal resistance values.

Q: Can I use IXFR64N50Q3 (45A) in an application designed for 75A?

A: No. The IXFR64N50Q3 is rated for 45A continuous drain current and must not be used in applications requiring the full 75A specification. Exceeding the rated current will result in device failure and potential circuit damage. Select substitute parts based on actual application current requirements, not on the primary device rating.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the device on and off. The APT75M50B2 requires 290 nC at 10V gate drive, while IXYS substitutes range from 145 nC to 200 nC. Lower gate charge enables faster switching transitions and reduces gate driver power dissipation. If the existing gate driver is current-limited, lower gate charge devices (IXFX78N50P3, IXFX64N50Q3, IXFR64N50Q3) may improve switching performance.

Q: Are all listed parts RoHS3 compliant?

A: Yes. All listed parts, including the primary APT75M50B2 and all IXYS substitutes, carry RoHS3 compliance certification. All parts are also REACH unaffected and carry MSL 1 (Unlimited) moisture sensitivity rating, suitable for standard manufacturing and storage conditions.

Q: What is the impact of lower power dissipation ratings in substitute parts?

A: Power dissipation rating reflects the maximum thermal load the device can handle under specified conditions. IXFR80N50Q3 (570W) and IXFR64N50Q3 (500W) have lower power dissipation ratings than the primary device (1040W). These lower ratings reflect the reduced current capability of these devices. In applications where current is limited to the substitute device rating, actual power dissipation will be lower, and thermal management requirements will be reduced.

Q: Can I mix APT75M50B2 and IXYS substitute parts in the same circuit?

A: Yes, provided each device is operated within its rated specifications. Parallel operation of different device types requires careful gate drive design to ensure balanced current sharing. Consult device datasheets for gate threshold voltage (Vgs(th)) matching requirements. Devices with different Vgs(th) values (APT75M50B2 at 5V vs. IXYS devices at 5V or 6.5V) may exhibit unequal current distribution in parallel configurations.

Q: What inventory considerations should guide substitute selection?

A: IXFR80N50Q3 offers the highest inventory availability (6996 units), followed by IXFX64N50Q3 (1047 units), IXFX78N50P3 (805 units), and IXFR64N50Q3 (657 units). The primary APT75M50B2 has 961 units in stock. For applications with extended lead time requirements or high-volume production, IXFR80N50Q3 provides the most reliable supply availability.

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