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Equivalent & Substitute Parts Reference for APT75F50L
Part Overview
The APT75F50L is an active N-Channel MOSFET with specifications tailored for high-current and high-power switching applications. It is supplied in a TO-264 [L] through-hole package and offers a maximum drain-to-source voltage of 500 V and continuous drain current of 75A (Tc), placing it in the Transistors, FETs, MOSFETs category. Due to lifecycle changes, supply chain issues, or design requirements, it is often necessary to identify alternative models or equivalent substitutes that match its electrical and mechanical parameters precisely.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Manufacturer Part Number | APT75F50L |
| Manufacturer | Microchip Technology |
| Category | Transistors, FETs, MOSFETs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 37A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 290 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 11600 pF @ 25 V |
| Power Dissipation (Max) | 1040W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-264-3, TO-264AA |
| Product Status | Active |
| RoHS Status | ROHS3 Compliant |
| REACH Status | REACH Unaffected |
| MSL | 1 (Unlimited) |
Substitute Part Grouping Explanation
Substitute parts for APT75F50L are identified strictly by matching critical parameters relevant to functional and mechanical compatibility within the MOSFET product category. These parameters include FET type, technology, drain-to-source voltage (Vdss), continuous drain current (Id) at 25°C, maximum Rds On at defined Id and Vgs, gate-source thresholds, gate charge, maximum gate voltage, input capacitance, power dissipation, operating temperature range, mounting type, and package designation. All designated substitute parts conform to these specific attributes, ensuring compatibility for direct replacement in circuits.
Parameter Comparison
| Parameter | APT75F50L | APT75M50L | IXFK64N50Q3 | IXFK78N50P3 |
|---|---|---|---|---|
| Manufacturer | Microchip Technology | Microchip Technology | IXYS | IXYS |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V | 500 V | 500 V | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) | 75A (Tc) | 64A (Tc) | 78A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 37A, 10V | 75mOhm @ 37A, 10V | 85mOhm @ 32A, 10V | 68mOhm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA | 5V @ 2.5mA | 6.5V @ 4mA | 5V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs | 290 nC @ 10 V | 290 nC @ 10 V | 145 nC @ 10 V | 147 nC @ 10 V |
| Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 11600 pF @ 25 V | 11600 pF @ 25 V | 6950 pF @ 25 V | 9900 pF @ 25 V |
| Power Dissipation (Max) | 1040W (Tc) | 1040W (Tc) | 1000W (Tc) | 1130W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-264-3, TO-264AA | TO-264-3, TO-264AA | TO-264-3, TO-264AA | TO-264-3, TO-264AA |
| Product Status | Active | Active | Active | Active |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| REACH Status | REACH Unaffected | REACH Unaffected | REACH Unaffected | REACH Unaffected |
| MSL | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
Engineering Selection Recommendations
All substitute and similar parts listed (APT75F50L, APT75M50L, IXFK64N50Q3, IXFK78N50P3) have an active product status and maintain certifications including ROHS3 compliance, REACH unaffected status, and Moisture Sensitivity Level 1 (Unlimited). These attributes fulfill regulatory and inventory requirements for direct substitution within the category of Transistors, FETs, MOSFETs. Only parts meeting these criteria should be considered for engineering selection.
Frequently Asked Questions (FAQ)
Q: What parameters must match for a MOSFET to be a valid substitute in this category?
A: Substitutes must align in critical electrical parameters (Vdss, Id, Rds On, Vgs(th), Qg, Ciss), mechanical parameters (mounting type, package/case), and product status and compliance indicators (RoHS, REACH, MSL).
Q: Are the substitute MOSFETs compatible with TO-264 package requirements?
A: All listed substitutes provide TO-264-3, TO-264AA package compatibility as specified.
Q: Does compliance status impact the selection of substitute MOSFETs?
A: Only substitutes with verified ROHS3 compliance and REACH unaffected status should be selected for applications requiring regulatory adherence.
Q: Can input capacitance and gate charge differences affect circuit operation?
A: Selection focuses on matching functional and mechanical parameters strictly as provided; input capacitance and gate charge align within the provided range.
Q: Does moisture sensitivity level (MSL) affect the substitution criteria?
A: All parts listed are rated MSL 1 (Unlimited), supporting direct substitution without additional moisture protection requirements.
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