APT66M60L Equivalent & Substitute Parts Reference

Part Overview

The APT66M60L by Microchip Technology is an N-channel 600 V, 70A (Tc) power MOSFET, featuring a maximum Rds On of 190mOhm and power dissipation up to 1135W (Tc) in a TO-264 [L] through-hole package. This model is part of the POWER MOS 8™ series and has an active product status. Finding alternative MOSFET models may be required due to availability, sourcing constraints, or design compatibility aligned with electrical and mechanical parameters.

Key Parameters

Parameter	Value
Category	Transistors, FETs, MOSFETs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	190mOhm @ 33A, 10V
Vgs(th) (Max) @ Id	5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs	330 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	13190 pF @ 25 V
Power Dissipation (Max)	1135W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-264 [L]
RoHS Status	ROHS3 Compliant
REACH Status	REACH Unaffected

Substitute Part Grouping Explanation

Substitute MOSFETs for the APT66M60L are grouped strictly according to the following key parameters: FET category (Transistors, FETs, MOSFETs), N-channel type, 600 V Drain to Source Voltage (Vdss), through-hole mounting, and Rds On, Id, and package similarity. Only those components meeting these criteria are included as substitutes.

Parameter Comparison

Part Number	Manufacturer	Category	FET Type	Technology	Vdss (V)	Id @ 25°C (A)	Drive Voltage	Rds On (Max)	Vgs(th) (Max)	Gate Charge (Qg) (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	RoHS Status	REACH Status
APT66M60L	Microchip Technology	Transistors, FETs, MOSFETs	N-Channel	MOSFET (Metal Oxide)	600	70	10V	190mOhm @ 33A, 10V	5V @ 2.5mA	330 nC @ 10V	±30V	13190 pF @ 25V	1135W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-264 [L]	ROHS3 Compliant	REACH Unaffected
FCH104N60	onsemi	Transistors, FETs, MOSFETs	N-Channel	MOSFET (Metal Oxide)	600	37	10V	104mOhm @ 18.5A, 10V	3.5V @ 250µA	82 nC @ 10V	±20V	4165 pF @ 380V	357W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	ROHS3 Compliant	REACH Unaffected
FCH104N60F-F085	onsemi	Transistors, FETs, MOSFETs	N-Channel	MOSFET (Metal Oxide)	600	37	10V	104mOhm @ 18.5A, 10V	5V @ 250µA	139 nC @ 10V	±20V	4302 pF @ 100V	357W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	ROHS3 Compliant	REACH Unaffected
STW48N60M2	STMicroelectronics	Transistors, FETs, MOSFETs	N-Channel	MOSFET (Metal Oxide)	600	42	10V	70mOhm @ 21A, 10V	4V @ 250µA	70 nC @ 10V	±25V	3060 pF @ 100V	300W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	ROHS3 Compliant	REACH Unaffected

Engineering Selection Recommendations

Selection of APT66M60L substitute MOSFETs should consider product status, RoHS/REACH compliance, and device package. The APT66M60L and all listed substitute parts are ROHS3 Compliant and REACH Unaffected. Check product status for availability: APT66M60L and STW48N60M2 are active, FCH104N60 is obsolete, and FCH104N60F-F085 is not for new designs. Mounting type for all parts is through-hole, with package variations (TO-264 [L] for APT66M60L; TO-247 variants for substitutes).

Frequently Asked Questions (FAQ)

Q1: What are the main criteria for selecting an equivalent to APT66M60L?
A: Equivalent selection is based strictly on N-channel MOSFET type, 600V Vdss, similar or compatible mounting type (through-hole), and parameters including Id, Rds On, package, and environmental compliance.

Q2: Can substitute MOSFETs with different package types be used?
A: Substitute devices listed use TO-247-3 packages, which differ in size compared to TO-264 [L]. Dimensional compatibility must be verified based on design constraints.

Q3: Are all listed substitute MOSFETs environmentally compliant?
A: All parts are designated ROHS3 Compliant and REACH Unaffected based on provided information.

Q4: How is continuous drain current (Id) considered in substitution?
A: Substitute devices show a range of Id values; it is essential to verify that the operational requirements of the application do not exceed the Id rating of the selected device.

Q5: Why does product status affect engineering substitution choice?
A: Product status determines supply and lifecycle. Active parts (APT66M60L, STW48N60M2) are current for design-in, while obsolete or not-for-new-designs (FCH104N60, FCH104N60F-F085) may be more suitable for maintenance or legacy applications.

Q6: Must all electrical parameters match exactly?
A: Substitution is determined by a match or close similarity across the key listed parameters: category, FET type, Vdss, Id, Rds On, package, and compliance fields.

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