APT66F60L Equivalent & Substitute Parts Reference

Part Overview

The APT66F60L from Microchip Technology is an N-Channel MOSFET with a voltage rating of 600 V and a continuous drain current of 70A, packaged in a TO-264 [L] through-hole case. It belongs to the POWER MOS 8™ series and is currently an active status product with RoHS3 compliance and unlimited moisture sensitivity level (MSL 1). Engineers may require alternative or substitute models for reasons such as multiple source qualification, matching electrical/mechanical fit for existing designs, supply risk mitigation, inventory status differences, or approved component cross-references.

Key Parameters

Parameter	APT66F60L
Category	Transistors, FETs, MOSFETs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	90mOhm @ 33A, 10V
Vgs(th) (Max) @ Id	5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs	330 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	13190 pF @ 25 V
Power Dissipation (Max)	1135W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-264 [L]
Package / Case	TO-264-3, TO-264AA
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected

Substitute Part Grouping Explanation

Substitute MOSFETs for the APT66F60L are determined solely based on the following parameters: FET type (N-Channel), technology (MOSFET), drain to source voltage (Vdss), continuous drain current (Id), maximum Rds On at defined Vgs and Id, gate threshold voltage (Vgs(th)), maximum gate charge (Qg), maximum Vgs, maximum input capacitance (Ciss), power dissipation (Pd), and matching through-hole packages. Only parts matching these electrical and mechanical key parameters within the same product category are included. Compliance status (RoHS, REACH, MSL) is also maintained as part of substitution matching.

Parameter Comparison

Part Number	Manufacturer	Vdss	Id (Tc)	Rds On (Max)	Vgs(th) (Max)	Qg (Max)	Vgs (Max)	Ciss (Max)	Pd (Max)	Operating Temp	Package / Case	RoHS	MSL	Status
APT66F60L	Microchip	600 V	70A	90mOhm @ 33A, 10V	5V @ 2.5mA	330 nC @ 10 V	±30V	13190 pF @ 25 V	1135W	-55°C~150°C	TO-264-3, TO-264AA	ROHS3	1	Active
FCH104N60	onsemi	600 V	37A	104mOhm @ 18.5A, 10V	3.5V @ 250µA	82 nC @ 10 V	±20V	4165 pF @ 380 V	357W	-55°C~150°C	TO-247-3	ROHS3	Not Applicable	Obsolete
FCH104N60F-F085	onsemi	600 V	37A	104mOhm @ 18.5A, 10V	5V @ 250µA	139 nC @ 10 V	±20V	4302 pF @ 100 V	357W	-55°C~150°C	TO-247-3	ROHS3	Not Applicable	Not For New Designs
IXFB82N60P	IXYS	600 V	82A	75mOhm @ 41A, 10V	5V @ 8mA	240 nC @ 10 V	±30V	23000 pF @ 25 V	1250W	-55°C~150°C	TO-264-3, TO-264AA	ROHS3	1	Active
IXFB82N60Q3	IXYS	600 V	82A	75mOhm @ 41A, 10V	6.5V @ 8mA	275 nC @ 10 V	±30V	13500 pF @ 25 V	1560W	-55°C~150°C	TO-264-3, TO-264AA	ROHS3	1	Active
IXFK64N60P3	IXYS	600 V	64A	95mOhm @ 32A, 10V	5V @ 4mA	145 nC @ 10 V	±30V	9900 pF @ 25 V	1130W	-55°C~150°C	TO-264-3, TO-264AA	ROHS3	1	Active
IXFK64N60Q3	IXYS	600 V	64A	95mOhm @ 32A, 10V	6.5V @ 4mA	190 nC @ 10 V	±30V	9930 pF @ 25 V	1250W	-55°C~150°C	TO-264-3, TO-264AA	ROHS3	1	Active
IXFK80N60P3	IXYS	600 V	80A	70mOhm @ 500mA, 10V	5V @ 8mA	190 nC @ 10 V	±30V	13100 pF @ 25 V	1300W	-55°C~150°C	TO-264-3, TO-264AA	ROHS3	1	Active
IXFL82N60P	IXYS	600 V	55A	78mOhm @ 41A, 10V	5V @ 8mA	240 nC @ 10 V	±30V	23000 pF @ 25 V	625W	-55°C~150°C	TO-264-3, TO-264AA	ROHS3	1	Active
STW48N60M2	STMicroelectronics	600 V	42A	70mOhm @ 21A, 10V	4V @ 250µA	70 nC @ 10 V	±25V	3060 pF @ 100 V	300W	-55°C~150°C	TO-247-3	ROHS3	1	Active

Engineering Selection Recommendations

All listed substitute MOSFETs are RoHS-compliant and REACH unaffected, consistent with the compliance of the main part number APT66F60L. Moisture Sensitivity Level (MSL) of 1 is maintained where specified. Substitute parts with active status provide supply continuity and long-term availability advantages over obsolete or not-for-new-designs items. Automotive qualification or additional product-grade information is specified when provided. Substitute MOSFETs with matching package types (TO-264-3, TO-264AA, or equivalent through-hole packages) are suitable where physical board constraints apply.

Frequently Asked Questions (FAQ)

Q1: What key parameters determine if a MOSFET is a suitable substitute for APT66F60L?
A1: A suitable substitute must match the FET type (N-Channel), technology (MOSFET), drain to source voltage (Vdss), current capability (Id), Rds On, gate threshold voltage (Vgs(th)), gate charge (Qg), Vgs (Max), power dissipation (Pd), package type, mounting method, and regulatory compliance (RoHS, REACH, MSL).

Q2: How do I interpret package/case differences for substitutes?
A2: Package compatibility is governed by mechanical and layout constraints. TO-264-3, TO-264AA, and through-hole compatible packages are included as interchangeable within the same mounting type and pinout specification.

Q3: Why are parts with “Obsolete” or “Not For New Designs” status included?
A3: These are listed only as strictly parameter-matching substitutes for critical supply continuity, design validation, legacy repair, or manufacturer-verified cross-compatibility. For ongoing production, prioritize substitutes with “Active” status.

Q4: What do RoHS, REACH, and MSL indicate in the parameter table?
A4: RoHS and REACH indicate material compliance and environmental safety status. MSL (Moisture Sensitivity Level) of 1 indicates that the part is not moisture-sensitive and has unlimited shelf life under standard operating conditions.

Q5: Are all substitutes interchangeable without additional validation?
A5: Interchangeability is defined here exclusively by the listed electrical and mechanical parameters. Further system validation, assembly fit, and testing may be governed by user-specific requirements outside the scope of provided parameters.

Q6: Is automotive qualification relevant to all substitutes?
A6: Automotive qualification (such as AEC-Q101) is indicated in the parameter list only for substitute part numbers where this is specified and may be a consideration in automotive or high-reliability applications.

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