APT60M75L2FLLG Equivalent & Substitute Parts

Part Overview

The APT60M75L2FLLG is an N-Channel 600V 73A MOSFET manufactured by Microchip Technology in the POWER MOS 7® series. This device is packaged in a TO-264-3 (264 MAX™ [L2]) through-hole configuration and is rated for 893W maximum power dissipation at case temperature. The part is currently Active in product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to inventory constraints, design flexibility, or application-specific requirements. The following substitute devices maintain the critical 600V drain-source voltage rating and comparable current handling capabilities within the specified parameter ranges.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	73	A
Rds On (Max) @ 36.5A, 10V	75	mOhm
Gate Charge (Qg) @ 10V	195	nC
Power Dissipation (Max)	893	W
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package	TO-264-3, TO-264AA	—
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution eligibility for the APT60M75L2FLLG is determined by the following critical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 600V (exact match required)
FET Type: N-Channel (exact match required)
Technology: MOSFET Metal Oxide (exact match required)
Mounting Type: Through Hole (exact match required)
Operating Temperature Range: -55°C to 150°C (minimum requirement)

Secondary Compatibility Parameters:

Continuous Drain Current (Id): 73A or greater
Rds On (Max): 75mOhm or lower (at comparable test conditions)
Package: TO-264-3 or TO-264AA compatible footprints
Gate Charge (Qg): Comparable switching characteristics
Power Dissipation: 893W or greater thermal capability

Substitute parts are grouped into two categories based on current rating alignment:

Category A - Direct Current Rating Match (73A to 82A): IXFB82N60P, IXFB82N60Q3. These devices provide equal or superior current handling with matching or superior Rds On specifications and are packaged in compatible PLUS264™ (TO-264-3/TO-264AA) configurations.

Category B - Reduced Current Rating (55A to 64A): IXFL82N60P, IXFK64N60P3, IXFK64N60Q3, IXFK80N60P3. These devices operate within acceptable current ranges for applications where the full 73A rating is not required, with compatible packaging and thermal performance.

Category C - Significantly Reduced Current Rating (37A to 42A): FCH104N60, FCH104N60F-F085, STW48N60M2. These devices are suitable only for applications with reduced current demands and are provided for reference in legacy or alternative design scenarios.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Qg @ 10V (nC)	Pd Max (W)	Package	Status
APT60M75L2FLLG	Microchip	600	73	75	195	893	TO-264-3	Active
IXFB82N60P	IXYS	600	82	75	240	1250	PLUS264™	Active
IXFB82N60Q3	IXYS	600	82	75	275	1560	PLUS264™	Active
IXFK80N60P3	IXYS	600	80	70	190	1300	TO-264AA	Active
IXFK64N60P3	IXYS	600	64	95	145	1130	TO-264AA	Active
IXFK64N60Q3	IXYS	600	64	95	190	1250	TO-264AA	Active
IXFL82N60P	IXYS	600	55	78	240	625	ISOPLUS264™	Active
FCH104N60	onsemi	600	37	104	82	357	TO-247-3	Obsolete
FCH104N60F-F085	onsemi	600	37	104	139	357	TO-247-3	Not For New Designs
STW48N60M2	STMicroelectronics	600	42	70	70	300	TO-247-3	Active

Engineering Selection Recommendations

Recommended Primary Substitutes (Active Status, Full Compatibility):

IXFB82N60P and IXFB82N60Q3 are the preferred substitutes for the APT60M75L2FLLG. Both devices are Active in product status, provide equal or superior continuous drain current (82A), maintain the 75mOhm Rds On specification, and are packaged in PLUS264™ (TO-264-3/TO-264AA) configurations with identical through-hole mounting. Both are RoHS3 compliant with unlimited moisture sensitivity rating. IXFB82N60Q3 provides enhanced thermal performance (1560W vs. 1250W) and is suitable for high-reliability applications.

IXFK80N60P3 is an alternative substitute offering 80A continuous drain current with superior Rds On performance (70mOhm) and Active product status. This device is packaged in TO-264AA configuration and provides 1300W power dissipation capability.

Secondary Substitutes (Active Status, Reduced Current Rating):

IXFK64N60P3 and IXFK64N60Q3 are Active devices suitable for applications where 64A continuous drain current is sufficient. Both maintain TO-264AA packaging compatibility and provide 1130W to 1250W power dissipation. IXFK64N60Q3 offers enhanced thermal performance.

IXFL82N60P is an Active device with 55A continuous drain current, packaged in ISOPLUS264™ configuration. This device is suitable for reduced-current applications with 625W power dissipation capability.

Not Recommended for New Designs:

FCH104N60 (Obsolete status) and FCH104N60F-F085 (Not For New Designs status) are provided for reference only. These onsemi devices provide only 37A continuous drain current and 357W power dissipation, significantly below the APT60M75L2FLLG specification. FCH104N60F-F085 includes AEC-Q101 automotive qualification.

STW48N60M2 (STMicroelectronics, Active status) provides 42A continuous drain current and 300W power dissipation in TO-247-3 packaging. This device is suitable only for applications with substantially reduced current requirements.

Frequently Asked Questions (FAQ)

Q: Can IXFB82N60P or IXFB82N60Q3 be used as direct replacements for APT60M75L2FLLG?

A: Yes. Both IXFB82N60P and IXFB82N60Q3 meet all critical substitution criteria: 600V Vdss rating, N-Channel MOSFET technology, through-hole mounting, and TO-264-3/TO-264AA compatible packaging. Both provide equal or superior continuous drain current (82A vs. 73A) and maintain the 75mOhm Rds On specification. Both are Active in product status with RoHS3 compliance and unlimited moisture sensitivity rating.

Q: What is the difference between IXFB82N60P and IXFB82N60Q3?

A: Both devices share identical electrical specifications (82A, 75mOhm Rds On, 600V Vdss). IXFB82N60Q3 is designated as Q3 Class and provides enhanced power dissipation (1560W vs. 1250W), making it suitable for higher thermal stress applications. IXFB82N60P is designated as Polar series. Both are Active in product status.

Q: Why are FCH104N60 and FCH104N60F-F085 listed as substitutes if they have lower current ratings?

A: These devices are listed because they maintain the 600V Vdss rating and N-Channel MOSFET technology. However, their 37A continuous drain current and 357W power dissipation are substantially below the APT60M75L2FLLG specification. FCH104N60 is Obsolete and FCH104N60F-F085 is Not For New Designs. These are provided for reference in legacy design scenarios only.

Q: Is packaging compatibility between TO-264-3 and TO-264AA critical?

A: TO-264-3 and TO-264AA are mechanically and electrically compatible through-hole packages with identical pin configurations and footprints. Devices specified in either package designation are suitable for applications designed for the APT60M75L2FLLG.

Q: What is the significance of the PLUS264™ and ISOPLUS264™ package designations?

A: PLUS264™ and ISOPLUS264™ are proprietary package designations by IXYS that are mechanically and electrically compatible with standard TO-264-3 and TO-264AA footprints. These packages provide enhanced thermal performance and are suitable for direct substitution in applications designed for TO-264-3 mounting.

Q: Can IXFK64N60P3 or IXFK64N60Q3 be used if the application does not require 73A continuous drain current?

A: Yes. If the application design requires only 64A or less continuous drain current, IXFK64N60P3 and IXFK64N60Q3 are suitable substitutes. Both are Active in product status, maintain 600V Vdss rating, and provide TO-264AA compatible packaging. IXFK64N60Q3 offers enhanced power dissipation (1250W vs. 1130W).

Q: What compliance certifications are relevant for substitute part selection?

A: All listed substitute parts maintain RoHS3 compliance and REACH Unaffected status, matching the APT60M75L2FLLG compliance profile. FCH104N60F-F085 includes AEC-Q101 automotive qualification for applications requiring automotive-grade components. All parts are classified under ECCN EAR99 and HTSUS 8541.29.0095.

Q: How does gate charge (Qg) affect substitute part selection?

A: Gate charge determines switching speed and drive circuit requirements. The APT60M75L2FLLG specifies 195nC @ 10V. Substitute parts range from 70nC to 275nC. Higher gate charge requires more drive current but may provide improved switching stability. Lower gate charge enables faster switching but requires more precise drive circuit design. Selection depends on application-specific switching frequency and drive circuit capability.

Q: Is thermal performance a critical factor in substitute selection?

A: Yes. The APT60M75L2FLLG is rated for 893W power dissipation. Substitute parts range from 300W to 1560W. Applications requiring the full 893W dissipation capability must select substitutes rated at 893W or higher. IXFB82N60Q3 (1560W) and IXFK80N60P3 (1300W) provide enhanced thermal margin for high-power applications.

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