Equivalent & Substitute Parts Reference for APT6030BVRG

Part Overview

Microchip Technology's APT6030BVRG is an N-Channel Power MOSFET in the TO-247 through-hole package, suitable for high-voltage and high-current switching applications. It offers a Drain to Source Voltage (Vdss) of 600 V and a Continuous Drain Current (Id) of 21A (Tc). The part is RoHS3 compliant, in stock, and active. Seeking alternative models is essential for design flexibility, maintaining supply chain resilience, and ensuring product availability in case of temporary inventory shortages, product EOL, or sourcing constraints.

Key Parameters

Parameter	Value
Manufacturer Part Number	APT6030BVRG
Manufacturer	Microchip Technology
Category	Transistors, FETs, MOSFETs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Rds On (Max) @ Id, Vgs	300mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	3750 pF @ 25 V
Mounting Type	Through Hole
Supplier Device Package	TO-247 [B]
Package / Case	TO-247-3
RoHS Status	ROHS3 Compliant
Product Status	Active

Substitute Part Grouping Explanation

Substitute parts for APT6030BVRG are determined by matching essential electrical and mechanical parameters required for MOSFET equivalency within the specified product category. The key parameters for substitution are:

FET Type
Technology
Drain to Source Voltage (Vdss)
Continuous Drain Current (Id)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Supplier Device Package
Package / Case
RoHS Status
Product Status

Parameter Comparison

Manufacturer Part Number	Manufacturer	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Supplier Device Package	Package / Case	RoHS Status	Product Status
APT6030BVRG	Microchip Technology	N-Channel	MOSFET (Metal Oxide)	600 V	21A (Tc)	300mOhm @ 10.5A, 10V	4V @ 1mA	150 nC @ 10 V	3750 pF @ 25 V	Through Hole	TO-247 [B]	TO-247-3	ROHS3 Compliant	Active
AOK20N60L	Alpha & Omega Semiconductor Inc.	N-Channel	MOSFET (Metal Oxide)	600 V	20A (Tc)	370mOhm @ 10A, 10V	4.5V @ 250µA	74 nC @ 10 V	3680 pF @ 25 V	Through Hole	TO-247	TO-247-3	ROHS3 Compliant	Obsolete
IXFR32N80Q3	IXYS	N-Channel	MOSFET (Metal Oxide)	800 V	24A (Tc)	300mOhm @ 16A, 10V	6.5V @ 4mA	140 nC @ 10 V	6940 pF @ 25 V	Through Hole	ISOPLUS247™	TO-247-3	ROHS3 Compliant	Active
IXFX27N80Q	IXYS	N-Channel	MOSFET (Metal Oxide)	800 V	27A (Tc)	320mOhm @ 500mA, 10V	4.5V @ 4mA	170 nC @ 10 V	7600 pF @ 25 V	Through Hole	PLUS247™-3	TO-247-3 Variant	ROHS3 Compliant	Active
IXTH12N65X2	IXYS	N-Channel	MOSFET (Metal Oxide)	650 V	12A (Tc)	300mOhm @ 6A, 10V	5V @ 250µA	17 nC @ 10 V	1100 pF @ 25 V	Through Hole	TO-247 (IXTH)	TO-247-3	ROHS3 Compliant	Active
SPW16N50C3FKSA1	Infineon Technologies	N-Channel	MOSFET (Metal Oxide)	560 V	16A (Tc)	280mOhm @ 10A, 10V	3.9V @ 675µA	66 nC @ 10 V	1600 pF @ 25 V	Through Hole	PG-TO247-3-1	TO-247-3	ROHS3 Compliant	Active
STW18N60M2	STMicroelectronics	N-Channel	MOSFET (Metal Oxide)	600 V	13A (Tc)	280mOhm @ 6.5A, 10V	4V @ 250µA	21.5 nC @ 10 V	791 pF @ 100 V	Through Hole	TO-247-3	TO-247-3	ROHS3 Compliant	Active
STW18NM60N	STMicroelectronics	N-Channel	MOSFET (Metal Oxide)	600 V	13A (Tc)	285mOhm @ 6.5A, 10V	4V @ 250µA	35 nC @ 10 V	1000 pF @ 50 V	Through Hole	TO-247-3	TO-247-3	ROHS3 Compliant	Active

Engineering Selection Recommendations

Selection of substitute parts must consider only product status, compliance, and certifications provided. Choose substitute MOSFETs that are listed as "Active" to ensure ongoing production and support. Prefer parts with ROHS3 compliance to maintain environmental and regulatory conformity. Inventory levels and REACH status are included only as explicitly provided and do not alter engineering selection criteria.

Frequently Asked Questions (FAQ)

Q1: What are the most critical parameters for MOSFET substitution in this category?
A1: For Transistors, FETs, MOSFETs, the most critical substitution parameters are FET type, technology, drain to source voltage (Vdss), continuous drain current (Id), Rds On (Max), gate threshold voltage (Vgs(th)), mounting type, and package compatibility.

Q2: Can substitute parts with different voltage or current ratings be directly used?
A2: Substitute parts must have comparable Vdss and Id values. Only use provided parameters to judge equivalence; selection outside these values is not validated here.

Q3: Does package type affect compatibility for through-hole MOSFETs?
A3: Only through-hole mounting types and the specified package/case (TO-247-3 or equivalent) are considered for direct substitution.

Q4: How does RoHS3 compliance impact substitute selection?
A4: RoHS3 compliance is mandatory for environmental and manufacturing requirements; only substitute parts with this status should be considered.

Q5: Are obsolete parts recommended as substitutes?
A5: Parts with "Obsolete" status, such as AOK20N60L, may affect long-term availability and support but remain listed when fitting input criteria.

Q6: Are all substitutes listed equivalent in terms of all electrical characteristics?
A6: Only parameters explicitly provided (Vdss, Id, Rds On, etc.) are used for equivalency. No further equivalency is established beyond these.

Q7: Is there any mechanical compatibility consideration beyond mounting and package/case?
A7: Substitution is limited strictly to the mounting type and package/case as provided; no additional mechanical fitment information is introduced.

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