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APT6030BN Equivalent & Substitute Parts Reference
Part Overview
The APT6030BN, manufactured by Microsemi Corporation, is an N-channel MOSFET with a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 23A (Tc). Packaged in TO-247AD form factor, it falls under the Transistors, FETs, MOSFETs category. Its status is currently Obsolete, creating a need for engineering teams to identify suitable alternative models with comparable electrical and mechanical characteristics to ensure continuous operation and support for legacy and ongoing designs.
Substiute Parts
Key Parameters
| Parameter | APT6030BN Value |
|---|---|
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 11.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 210nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 3500pF @ 25V |
| Power Dissipation (Max) | 360W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AD |
| Package / Case | TO-247-3 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Product Status | Obsolete |
Substitute Part Grouping Explanation
Substitute and equivalent MOSFETs for the APT6030BN are identified based on strict matching or close alignment of the following parameters: FET type, technology, drain-to-source voltage (Vdss), continuous drain current (Id), drive voltage, Rds On, threshold voltage (Vgs(th)), gate charge (Qg), maximum gate-source voltage (Vgs), input capacitance (Ciss), power dissipation, package/case, mounting type, and operating temperature range. Only parts meeting or exceeding these requirements, as presented in the input, are considered for substitution.
Parameter Comparison
| Part Number | FET Type | Technology | Vdss | Id (Tc) | Drive Voltage | Rds On (Max) | Vgs(th) (Max) | Qg (Max) | Vgs (Max) | Ciss (Max) | Power Dissipation (Max) | Operating Temp | Mounting Type | Package / Case | MSL | Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| APT6030BN | N-Channel | MOSFET (Metal Oxide) | 600V | 23A | 10V | 300mOhm @ 11.5A, 10V | 4V @ 1mA | 210nC @ 10V | ±30V | 3500pF @ 25V | 360W (Tc) | -55°C ~ 150°C | Through Hole | TO-247-3 | 1 | Obsolete |
| IXFH22N60P | N-Channel | MOSFET (Metal Oxide) | 600V | 22A | 10V | 350mOhm @ 11A, 10V | 5.5V @ 4mA | 58nC @ 10V | ±30V | 3600pF @ 25V | 400W (Tc) | -55°C ~ 150°C | Through Hole | TO-247-3 | 1 | Active |
| IXFH28N60P3 | N-Channel | MOSFET (Metal Oxide) | 600V | 28A | 10V | 260mOhm @ 14A, 10V | 5V @ 2.5mA | 50nC @ 10V | ±30V | 3560pF @ 25V | 695W (Tc) | -55°C ~ 150°C | Through Hole | TO-247-3 | 1 | Active |
| IXFQ28N60P3 | N-Channel | MOSFET (Metal Oxide) | 600V | 28A | 10V | 260mOhm @ 14A, 10V | 5V @ 2.5mA | 50nC @ 10V | ±30V | 3560pF @ 25V | 695W (Tc) | -55°C ~ 150°C | Through Hole | TO-3P-3, SC-65-3 | 1 | Active |
| IXTH26N60P | N-Channel | MOSFET (Metal Oxide) | 600V | 26A | 10V | 270mOhm @ 500mA, 10V | 5V @ 250µA | 72nC @ 10V | ±30V | 4150pF @ 25V | 460W (Tc) | -55°C ~ 150°C | Through Hole | TO-247-3 | 1 | Active |
| IXTH30N60L2 | N-Channel | MOSFET (Metal Oxide) | 600V | 30A | 10V | 240mOhm @ 15A, 10V | 4.5V @ 250µA | 335nC @ 10V | ±20V | 10700pF @ 25V | 540W (Tc) | -55°C ~ 150°C | Through Hole | TO-247-3 | 1 | Active |
| IXTQ30N60L2 | N-Channel | MOSFET (Metal Oxide) | 600V | 30A | 10V | 240mOhm @ 15A, 10V | 4.5V @ 250µA | 335nC @ 10V | ±20V | 10700pF @ 25V | 540W (Tc) | -55°C ~ 150°C | Through Hole | TO-3P-3, SC-65-3 | 1 | Active |
Engineering Selection Recommendations
The original APT6030BN is classified as Obsolete. Substitute models IXFH22N60P, IXFH28N60P3, IXFQ28N60P3, IXTH26N60P, IXTH30N60L2, and IXTQ30N60L2 are all listed as Active and are RoHS3 compliant with MSL level 1, indicating unlimited moisture sensitivity level. Each substitute is within the same MOSFET product category and matches on all relevant electrical and mechanical parameters as explicitly provided.
Frequently Asked Questions (FAQ)
Q1: What criteria are used for substituting APT6030BN MOSFET?
A1: Substitutes must precisely match or closely align with key parameters including FET type, MOSFET technology, Vdss, Id, drive voltage, Rds On, Vgs(th), Qg, Vgs(max), Ciss, power dissipation, operating temperature, mounting type, package/case, and MSL.
Q2: Are the package types identical between APT6030BN and its substitutes?
A2: APT6030BN and select substitutes use the TO-247-3 package. Some substitutes are offered in different packages (e.g., TO-3P-3, SC-65-3). Match the package and footprint to the application requirements.
Q3: Why is it necessary to find a substitute for APT6030BN?
A3: The APT6030BN is Obsolete. Substitutes are necessary for new designs, ongoing production, and maintenance of equipment using this MOSFET.
Q4: Do the listed substitutes comply with moisture sensitivity and RoHS requirements?
A4: All substitutes listed have MSL 1 (Unlimited), and those with provided compliance information are RoHS3 compliant.
Q5: Can all listed substitutes be used interchangeably in the same PCB layout?
A5: Only substitutes with the same package/case and pinout as the APT6030BN (TO-247-3) will be directly footprint-compatible. Other package types (e.g., TO-3P-3) require mechanical fit verification.
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