APT6030BN Equivalent & Substitute Parts Reference

Part Overview

The APT6030BN, manufactured by Microsemi Corporation, is an N-channel MOSFET with a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 23A (Tc). Packaged in TO-247AD form factor, it falls under the Transistors, FETs, MOSFETs category. Its status is currently Obsolete, creating a need for engineering teams to identify suitable alternative models with comparable electrical and mechanical characteristics to ensure continuous operation and support for legacy and ongoing designs.

Substiute Parts

APT6030BN
Microsemi CorporationIn Stock: 14159APT6030BN Datasheet
APT6030BN
Current Part
IXFH22N60P
IXYSIn Stock: 6309IXFH22N60P Datasheet
IXFH22N60P
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IXFH28N60P3
IXYSIn Stock: 1500IXFH28N60P3 Datasheet
IXFH28N60P3
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IXFQ28N60P3
IXYSIn Stock: 1121IXFQ28N60P3 Datasheet
IXFQ28N60P3
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IXTH26N60P
IXYSIn Stock: 1479IXTH26N60P Datasheet
IXTH26N60P
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IXTH30N60L2
IXYSIn Stock: 5833IXTH30N60L2 Datasheet
IXTH30N60L2
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IXTQ30N60L2
IXYSIn Stock: 1215IXTQ30N60L2 Datasheet
IXTQ30N60L2
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Key Parameters

ParameterAPT6030BN Value
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs300mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs210nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3500pF @ 25V
Power Dissipation (Max)360W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AD
Package / CaseTO-247-3
Moisture Sensitivity Level (MSL)1 (Unlimited)
Product StatusObsolete

Substitute Part Grouping Explanation

Substitute and equivalent MOSFETs for the APT6030BN are identified based on strict matching or close alignment of the following parameters: FET type, technology, drain-to-source voltage (Vdss), continuous drain current (Id), drive voltage, Rds On, threshold voltage (Vgs(th)), gate charge (Qg), maximum gate-source voltage (Vgs), input capacitance (Ciss), power dissipation, package/case, mounting type, and operating temperature range. Only parts meeting or exceeding these requirements, as presented in the input, are considered for substitution.

Parameter Comparison

Part Number FET Type Technology Vdss Id (Tc) Drive Voltage Rds On (Max) Vgs(th) (Max) Qg (Max) Vgs (Max) Ciss (Max) Power Dissipation (Max) Operating Temp Mounting Type Package / Case MSL Status
APT6030BN N-Channel MOSFET (Metal Oxide) 600V 23A 10V 300mOhm @ 11.5A, 10V 4V @ 1mA 210nC @ 10V ±30V 3500pF @ 25V 360W (Tc) -55°C ~ 150°C Through Hole TO-247-3 1 Obsolete
IXFH22N60P N-Channel MOSFET (Metal Oxide) 600V 22A 10V 350mOhm @ 11A, 10V 5.5V @ 4mA 58nC @ 10V ±30V 3600pF @ 25V 400W (Tc) -55°C ~ 150°C Through Hole TO-247-3 1 Active
IXFH28N60P3 N-Channel MOSFET (Metal Oxide) 600V 28A 10V 260mOhm @ 14A, 10V 5V @ 2.5mA 50nC @ 10V ±30V 3560pF @ 25V 695W (Tc) -55°C ~ 150°C Through Hole TO-247-3 1 Active
IXFQ28N60P3 N-Channel MOSFET (Metal Oxide) 600V 28A 10V 260mOhm @ 14A, 10V 5V @ 2.5mA 50nC @ 10V ±30V 3560pF @ 25V 695W (Tc) -55°C ~ 150°C Through Hole TO-3P-3, SC-65-3 1 Active
IXTH26N60P N-Channel MOSFET (Metal Oxide) 600V 26A 10V 270mOhm @ 500mA, 10V 5V @ 250µA 72nC @ 10V ±30V 4150pF @ 25V 460W (Tc) -55°C ~ 150°C Through Hole TO-247-3 1 Active
IXTH30N60L2 N-Channel MOSFET (Metal Oxide) 600V 30A 10V 240mOhm @ 15A, 10V 4.5V @ 250µA 335nC @ 10V ±20V 10700pF @ 25V 540W (Tc) -55°C ~ 150°C Through Hole TO-247-3 1 Active
IXTQ30N60L2 N-Channel MOSFET (Metal Oxide) 600V 30A 10V 240mOhm @ 15A, 10V 4.5V @ 250µA 335nC @ 10V ±20V 10700pF @ 25V 540W (Tc) -55°C ~ 150°C Through Hole TO-3P-3, SC-65-3 1 Active

Engineering Selection Recommendations

The original APT6030BN is classified as Obsolete. Substitute models IXFH22N60P, IXFH28N60P3, IXFQ28N60P3, IXTH26N60P, IXTH30N60L2, and IXTQ30N60L2 are all listed as Active and are RoHS3 compliant with MSL level 1, indicating unlimited moisture sensitivity level. Each substitute is within the same MOSFET product category and matches on all relevant electrical and mechanical parameters as explicitly provided.

Frequently Asked Questions (FAQ)

Q1: What criteria are used for substituting APT6030BN MOSFET?
A1: Substitutes must precisely match or closely align with key parameters including FET type, MOSFET technology, Vdss, Id, drive voltage, Rds On, Vgs(th), Qg, Vgs(max), Ciss, power dissipation, operating temperature, mounting type, package/case, and MSL.

Q2: Are the package types identical between APT6030BN and its substitutes?
A2: APT6030BN and select substitutes use the TO-247-3 package. Some substitutes are offered in different packages (e.g., TO-3P-3, SC-65-3). Match the package and footprint to the application requirements.

Q3: Why is it necessary to find a substitute for APT6030BN?
A3: The APT6030BN is Obsolete. Substitutes are necessary for new designs, ongoing production, and maintenance of equipment using this MOSFET.

Q4: Do the listed substitutes comply with moisture sensitivity and RoHS requirements?
A4: All substitutes listed have MSL 1 (Unlimited), and those with provided compliance information are RoHS3 compliant.

Q5: Can all listed substitutes be used interchangeably in the same PCB layout?
A5: Only substitutes with the same package/case and pinout as the APT6030BN (TO-247-3) will be directly footprint-compatible. Other package types (e.g., TO-3P-3) require mechanical fit verification.

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