APT6029BLLG Equivalent & Substitute Parts

Part Overview

The APT6029BLLG is an N-Channel 600V 21A MOSFET manufactured by Microchip Technology in the POWER MOS 7® series. This through-hole TO-247 device is rated for 300W power dissipation and operates across the temperature range of -55°C to 150°C. The part is currently active and in stock with 1,072 units available. Substitute parts are necessary when the primary device is unavailable, when higher current or power dissipation requirements exist, or when alternative manufacturer sourcing is required for supply chain continuity.

Substiute Parts

APT6029BLLG

Microchip TechnologyIn Stock: 1085APT6029BLLG Datasheet

Current PartRFQ

IXFH28N60P3

IXYSIn Stock: 1500IXFH28N60P3 Datasheet

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IXTH26N60P

IXYSIn Stock: 1479IXTH26N60P Datasheet

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IXTH30N60L2

IXYSIn Stock: 5833IXTH30N60L2 Datasheet

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IXTH30N60P

IXYSIn Stock: 1442IXTH30N60P Datasheet

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SPW16N50C3FKSA1

Infineon TechnologiesIn Stock: 1082SPW16N50C3FKSA1 Datasheet

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STW18N60M2

STMicroelectronicsIn Stock: 1362STW18N60M2 Datasheet

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STW18NM60N

STMicroelectronicsIn Stock: 1804STW18NM60N Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of N-Channel 600V MOSFETs is determined by the following critical parameters:

Primary Compatibility Criteria:

• Drain to Source Voltage (Vdss) must equal or exceed 600V
• Package type must be TO-247-3 (through-hole mounting)
• Operating temperature range must encompass -55°C to 150°C
• FET type must be N-Channel MOSFET technology
• RoHS3 compliance and REACH unaffected status required

Secondary Selection Criteria:

• Continuous drain current (Id) at 25°C
• On-state resistance (Rds On)
• Gate charge (Qg)
• Power dissipation capability
• Gate threshold voltage (Vgs(th))

Substitute parts are grouped into two categories: direct replacements with equivalent or superior current ratings, and alternative devices with reduced current ratings for lower-power applications. All listed substitutes maintain the 600V voltage rating and TO-247-3 package format.

Parameter Comparison

Engineering Selection Recommendations

Higher Current Capacity Substitutes:

The IXFH28N60P3, IXTH26N60P, IXTH30N60L2, and IXTH30N60P devices provide current ratings of 28A, 26A, 30A, and 30A respectively, exceeding the APT6029BLLG's 21A rating. These parts are suitable for applications requiring higher continuous drain current or improved thermal performance. All maintain 600V Vdss rating and TO-247-3 packaging. The IXFH28N60P3 offers the highest power dissipation at 695W. The IXTH30N60L2 and IXTH30N60P both deliver 540W dissipation with identical Rds On values of 240mOhm.

Equivalent Current Capacity Substitute:

The SPW16N50C3FKSA1 from Infineon Technologies provides 16A continuous drain current with a Vdss rating of 560V. This device operates within the same temperature range and maintains TO-247-3 packaging. The 560V rating is below the 600V specification and should be selected only when application voltage requirements do not exceed 560V.

Lower Current Capacity Substitutes:

The STW18N60M2 and STW18NM60N devices from STMicroelectronics provide 13A continuous drain current with 600V Vdss rating. These parts are suitable for lower-power applications or as alternatives when higher-current devices are unavailable. Both maintain the required operating temperature range and TO-247-3 package format.

All substitute parts listed are active products with RoHS3 compliance and REACH unaffected status, matching the regulatory requirements of the primary device.

Frequently Asked Questions (FAQ)

Q: Can the IXFH28N60P3 directly replace the APT6029BLLG?

A: The IXFH28N60P3 is a direct substitute. It maintains the 600V Vdss rating, TO-247-3 package, and -55°C to 150°C operating temperature range. The higher 28A current rating and 695W power dissipation provide superior performance margins. Pin configuration is compatible with the TO-247-3 standard.

Q: What is the difference between IXTH30N60L2 and IXTH30N60P?

A: Both devices provide 30A continuous drain current, 600V Vdss, and 540W power dissipation in TO-247-3 packaging. The IXTH30N60L2 is part of the Linear L2™ series with a gate charge of 335nC and input capacitance of 10700pF. The IXTH30N60P is part of the Polar series with a gate charge of 82nC and input capacitance of 5050pF. Selection depends on circuit requirements for gate drive characteristics.

Q: Can the SPW16N50C3FKSA1 be used in place of the APT6029BLLG?

A: The SPW16N50C3FKSA1 has a Vdss rating of 560V, which is below the 600V specification of the APT6029BLLG. This device is suitable only for applications where the maximum drain-source voltage does not exceed 560V. The 16A current rating is also lower than the primary device.

Q: Are the STW18N60M2 and STW18NM60N interchangeable?

A: Both devices provide identical voltage and current ratings (600V, 13A) in TO-247-3 packaging. The STW18N60M2 is part of the MDmesh™ II Plus series, while the STW18NM60N is part of the MDmesh™ II series. Gate charge and input capacitance differ slightly. Selection should be based on specific circuit requirements and availability.

Q: What packaging considerations apply to these substitutes?

A: All listed substitute parts use TO-247-3 through-hole packaging, identical to the APT6029BLLG. Pin assignments follow the standard TO-247-3 configuration. PCB layout and thermal management considerations remain consistent across all substitutes.

Q: Do all substitutes meet the same compliance requirements?

A: All substitute parts listed are RoHS3 compliant and REACH unaffected, matching the regulatory status of the APT6029BLLG. Moisture sensitivity level is 1 (Unlimited) for all devices. ECCN and HTSUS classifications are identical across all parts.

Q: Which substitute offers the best on-state resistance performance?

A: The IXTH30N60L2 and IXTH30N60P both provide the lowest Rds On value of 240mOhm at 15A and 10V gate voltage, compared to the APT6029BLLG's 290mOhm at 10.5A and 10V. Lower on-state resistance reduces conduction losses in switching applications.