APT6025BLLG N-Channel 600V 24A MOSFET Equivalent & Substitute Parts

Part Overview

The APT6025BLLG is an N-Channel 600V 24A (Tc) power MOSFET manufactured by Microchip Technology in the POWER MOS 7® series. This device is housed in a Through Hole TO-247-3 package and is classified as Active product status. The APT6025BLLG serves applications requiring high-voltage switching with moderate current handling in industrial power conversion, motor control, and switching power supply circuits.

Equivalent and substitute parts are identified based on matching or exceeding critical electrical parameters while maintaining compatible mechanical packaging. Substitution becomes necessary when the primary part experiences supply constraints, obsolescence risk, or when design flexibility permits selection from multiple qualified sources.

Key Parameters

Parameter	Value	Specification
Drain to Source Voltage (Vdss)	600 V	Maximum voltage rating between drain and source
Continuous Drain Current (Id) @ 25°C	24 A (Tc)	Maximum continuous current at case temperature
On-State Resistance (Rds On) @ Id, Vgs	250 mOhm @ 12A, 10V	Drain-source on-state resistance at specified conditions
Gate Threshold Voltage (Vgs(th)) @ Id	5 V @ 1 mA	Gate voltage required for conduction
Gate Charge (Qg) @ Vgs	65 nC @ 10 V	Total gate charge for switching
Input Capacitance (Ciss) @ Vds	2910 pF @ 25 V	Input capacitance at specified drain-source voltage
Mounting Type	Through Hole	PCB connection method
Package / Case	TO-247-3	Industry standard three-lead through-hole package
RoHS Status	ROHS3 Compliant	Environmental compliance certification
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Moisture handling classification

Substitute Part Grouping Explanation

Substitute parts for the APT6025BLLG are qualified based on the following substitution criteria:

Primary Matching Parameters:

Drain to Source Voltage (Vdss): 600 V or higher
Continuous Drain Current (Id): 24 A or higher
Package / Case: TO-247-3 (mechanical compatibility)
Mounting Type: Through Hole
RoHS Status: ROHS3 Compliant

Secondary Compatibility Parameters:

On-State Resistance (Rds On): Lower or equivalent values preferred
Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Lower values improve switching speed
Gate Threshold Voltage (Vgs(th)): Within ±1V of main part for gate drive compatibility

Substitutes are grouped into two categories:

Category A - Direct Voltage/Current Match (600V, ≥24A): Parts meeting or exceeding both voltage and current ratings with minimal parameter deviation. These include IXTH30N60L2, IXTH30N60P, IXFH28N60P3, IXTH26N60P, and IRFP22N60KPBF.

Category B - Higher Voltage Rating (800V, ≥17A): Parts with elevated voltage rating (800V) and reduced current rating (17A). These provide overvoltage margin but require application verification. This category includes IPW80R280P7XKSA1.

Category C - Lower Voltage Rating (600V, <24A): Parts with matching voltage but reduced current rating (13.8A). These are suitable only for applications with lower current demands. This category includes IPW60R280P6FKSA1.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Ciss (pF)	Package
APT6025BLLG	Microchip Technology	600	24	250 @ 12A, 10V	5 @ 1mA	65 @ 10V	2910 @ 25V	TO-247-3
IXTH30N60L2	IXYS	600	30	240 @ 15A, 10V	4.5 @ 250µA	335 @ 10V	10700 @ 25V	TO-247-3
IXTH30N60P	IXYS	600	30	240 @ 15A, 10V	5 @ 250µA	82 @ 10V	5050 @ 25V	TO-247-3
IXFH28N60P3	IXYS	600	28	260 @ 14A, 10V	5 @ 2.5mA	50 @ 10V	3560 @ 25V	TO-247-3
IXTH26N60P	IXYS	600	26	270 @ 500mA, 10V	5 @ 250µA	72 @ 10V	4150 @ 25V	TO-247-3
IRFP22N60KPBF	Vishay Siliconix	600	22	280 @ 13A, 10V	5 @ 250µA	150 @ 10V	3570 @ 25V	TO-247-3
IPW60R280P6FKSA1	Infineon Technologies	600	13.8	280 @ 5.2A, 10V	4.5 @ 430µA	25.5 @ 10V	1190 @ 100V	TO-247-3
IPW80R280P7XKSA1	Infineon Technologies	800	17	280 @ 7.2A, 10V	3.5 @ 360µA	36 @ 10V	1200 @ 500V	TO-247-3

Engineering Selection Recommendations

Recommended Primary Substitutes (Direct Equivalents):

IXTH30N60L2 and IXTH30N60P are the closest functional equivalents to the APT6025BLLG. Both devices provide 30A continuous drain current at 600V, exceeding the 24A requirement of the main part. Both are ROHS3 compliant with MSL 1 (Unlimited) rating, matching the environmental and moisture specifications of the APT6025BLLG. The IXTH30N60L2 features lower gate charge (335 nC) compared to IXTH30N60P (82 nC), with the trade-off of higher input capacitance. Both operate across the same temperature range (-55°C to 150°C).

IXFH28N60P3 provides 28A continuous current with 600V rating and represents a high-performance alternative with the lowest gate charge (50 nC) among direct equivalents. This device is suitable for applications prioritizing switching speed and efficiency. ROHS3 compliance and MSL 1 rating are confirmed.

IXTH26N60P offers 26A continuous current at 600V with moderate gate charge (72 nC) and is ROHS3 compliant with MSL 1 rating. This part provides a balanced performance profile between current capacity and switching characteristics.

IRFP22N60KPBF provides 22A continuous current at 600V, slightly below the APT6025BLLG rating. This device is ROHS3 compliant with MSL 1 rating and is suitable for applications where the 24A requirement can be relaxed to 22A. Higher gate charge (150 nC) and input capacitance (3570 pF) should be considered in gate drive design.

Alternative Substitutes (Conditional Use):

IPW60R280P6FKSA1 (Infineon CoolMOS™ P6 series) provides 13.8A at 600V and is suitable only for applications with reduced current demands below 24A. This device features the lowest gate charge (25.5 nC) and input capacitance (1190 pF) among all listed parts, offering superior switching performance for lower-current designs. ROHS3 compliance is confirmed.

IPW80R280P7XKSA1 (Infineon CoolMOS™ series) provides 17A at 800V and is applicable only when overvoltage margin is required and current demand does not exceed 17A. This device is ROHS3 compliant. The elevated voltage rating (800V) requires verification that the application circuit can tolerate this higher rating without adverse effects on other components.

Selection Criteria Summary:

For direct replacement with current margin: Select IXTH30N60L2 or IXTH30N60P
For optimized switching performance: Select IXFH28N60P3
For balanced performance: Select IXTH26N60P
For lower current applications (≤22A): Select IRFP22N60KPBF or IPW60R280P6FKSA1
For overvoltage-rated applications (≤17A): Select IPW80R280P7XKSA1

All recommended substitutes maintain TO-247-3 through-hole packaging, ROHS3 compliance, and MSL 1 moisture sensitivity rating, ensuring mechanical and environmental compatibility with the APT6025BLLG.

Frequently Asked Questions (FAQ)

Q: Can IRFP22N60KPBF be used as a direct substitute for APT6025BLLG?

A: IRFP22N60KPBF provides 22A continuous current compared to the APT6025BLLG's 24A rating. This represents a 2A reduction in current capacity. Substitution is permissible only if the application circuit operates at or below 22A continuous current. Both devices share 600V voltage rating, TO-247-3 packaging, ROHS3 compliance, and MSL 1 rating. Gate charge and input capacitance differ, requiring verification of gate drive circuit compatibility.

Q: What is the difference between IXTH30N60L2 and IXTH30N60P?

A: Both devices provide identical 600V voltage rating and 30A continuous current. The primary differences are gate charge (335 nC for L2 versus 82 nC for P) and input capacitance (10700 pF for L2 versus 5050 pF for P). The IXTH30N60L2 is designated as Linear L2™ series, while IXTH30N60P is Polar series. The L2 variant exhibits higher capacitance but lower gate charge, affecting switching speed and gate drive requirements differently. Both are ROHS3 compliant with MSL 1 rating.

Q: Is IPW80R280P7XKSA1 suitable for direct replacement?

A: IPW80R280P7XKSA1 is not a direct replacement. This device provides 800V voltage rating (200V higher than APT6025BLLG) and 17A continuous current (7A lower than APT6025BLLG). Substitution requires application verification that the circuit can tolerate 800V rating without component stress and that current demand does not exceed 17A. The device is ROHS3 compliant and uses TO-247-3 packaging. Use this part only when overvoltage margin is a design requirement.

Q: Why does IPW60R280P6FKSA1 have lower gate charge than other substitutes?

A: IPW60R280P6FKSA1 is rated for 13.8A continuous current, significantly lower than the APT6025BLLG's 24A. Lower current rating permits reduced gate charge (25.5 nC) and input capacitance (1190 pF) through optimized die design. This device is suitable only for applications with current demands below 13.8A. The lower switching losses make it advantageous for low-current, high-frequency applications.

Q: Are all substitute parts available in the same TO-247-3 package?

A: All listed substitute parts use TO-247-3 through-hole packaging, ensuring mechanical compatibility with PCB layouts designed for the APT6025BLLG. Specific package designations vary by manufacturer (TO-247 [B], PG-TO247-3, TO-247AC, TO-247AD), but all conform to the standard TO-247-3 footprint and pin configuration.

Q: What compliance certifications are common across all substitutes?

A: All substitute parts listed are ROHS3 compliant, matching the APT6025BLLG environmental compliance status. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for all parts except IPW80R280P7XKSA1, which lists MSL as Not Applicable. All parts are classified as Active product status. REACH status is REACH Unaffected for all parts with this specification provided.

Q: How does gate charge affect circuit performance?

A: Gate charge (Qg) determines the total charge required to switch the MOSFET from off to on state. Lower gate charge reduces switching time and gate drive power dissipation. APT6025BLLG specifies 65 nC at 10V. Substitutes range from 25.5 nC (IPW60R280P6FKSA1) to 335 nC (IXTH30N60L2). Lower gate charge improves efficiency in high-frequency switching applications but may require gate drive circuit adjustment for optimal performance.

Q: Can input capacitance differences affect circuit operation?

A: Input capacitance (Ciss) affects gate drive circuit impedance and switching speed. APT6025BLLG specifies 2910 pF at 25V. Substitutes range from 1190 pF to 10700 pF. Higher input capacitance increases gate drive current requirements and may slow switching transitions. Lower input capacitance reduces gate drive stress and improves switching speed. Gate drive circuit design should account for these differences to maintain stable operation.

Q: What is the significance of Vgs(th) threshold voltage differences?

A: Gate threshold voltage (Vgs(th)) is the gate voltage at which the MOSFET begins to conduct. APT6025BLLG specifies 5V at 1mA. Substitutes range from 3.5V to 5V. Lower threshold voltage permits lower gate drive voltage but may increase susceptibility to false triggering from noise. Higher threshold voltage provides better noise immunity. Gate drive circuits should be verified to provide sufficient voltage margin above the threshold of the selected substitute part.

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