APT6021BFLLG Equivalent & Substitute Parts

Part Overview

The APT6021BFLLG is an N-Channel 600V 29A MOSFET manufactured by Microchip Technology in the POWER MOS 7® series. This through-hole TO-247 device is designed for high-voltage switching applications requiring continuous drain current capability at elevated temperatures. The part is currently in active production status with 915 units in stock.

Equivalent and substitute parts are necessary when the primary part becomes unavailable, when alternative sourcing is required for supply chain optimization, or when design flexibility permits selection from multiple qualified manufacturers offering comparable electrical and mechanical characteristics within the same package family.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	29	A
On-State Resistance (Rds On) @ 14.5A, 10V	210	mOhm
Gate Threshold Voltage (Vgs(th)) @ 1mA	5	V
Gate Charge (Qg) @ 10V	80	nC
Input Capacitance (Ciss) @ 25V	3470	pF
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Mounting Type	Through Hole	—
Package / Case	TO-247-3	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the APT6021BFLLG is determined by strict equivalence across the following critical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 600V (exact match required)
FET Type: N-Channel (exact match required)
Technology: MOSFET Metal Oxide (exact match required)
Package / Case: TO-247-3 (exact match required)
Mounting Type: Through Hole (exact match required)

Secondary Substitution Criteria:

Continuous Drain Current (Id) @ 25°C: 29A ±1A acceptable range
On-State Resistance (Rds On): 210mOhm baseline; lower values acceptable, higher values require application verification
Gate Charge (Qg): 80nC baseline; lower values acceptable
Input Capacitance (Ciss): 3470pF baseline; comparable values within ±20% acceptable

All substitute parts listed meet the primary criteria. Secondary parameters vary within acceptable engineering tolerances for direct substitution in applications designed for the APT6021BFLLG.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Ciss (pF)	Package	Status
APT6021BFLLG	Microchip Technology	600	29	210 @ 14.5A	5 @ 1mA	80 @ 10V	3470 @ 25V	TO-247-3	Active
STW34NM60N	STMicroelectronics	600	29	105 @ 14.5A	4 @ 250µA	80 @ 10V	2722 @ 100V	TO-247-3	Active
IXFH28N60P3	IXYS	600	28	260 @ 14A	5 @ 2.5mA	50 @ 10V	3560 @ 25V	TO-247-3	Active
IXTH30N60L2	IXYS	600	30	240 @ 15A	4.5 @ 250µA	335 @ 10V	10700 @ 25V	TO-247-3	Active
IXTH30N60P	IXYS	600	30	240 @ 15A	5 @ 250µA	82 @ 10V	5050 @ 25V	TO-247-3	Active
IXTH26N60P	IXYS	600	26	270 @ 500mA	5 @ 250µA	72 @ 10V	4150 @ 25V	TO-247-3	Active
FCH170N60	Fairchild Semiconductor	600	22	170 @ 11A	3.5 @ 250µA	55 @ 10V	2860 @ 380V	TO-247-3	Active
R6024KNZ1C9	Rohm Semiconductor	600	24	165 @ 11.3A	5 @ 1mA	45 @ 10V	2000 @ 25V	TO-247-3	Obsolete
STW20NM60	STMicroelectronics	600	20	290 @ 10A	5 @ 250µA	54 @ 10V	1500 @ 25V	TO-247-3	Active
STW24N60DM2	STMicroelectronics	600	18	200 @ 9A	5 @ 250µA	29 @ 10V	1055 @ 100V	TO-247-3	Active

Engineering Selection Recommendations

Primary Equivalent (Direct Substitution):

The STW34NM60N from STMicroelectronics is the primary equivalent for the APT6021BFLLG. Both devices share identical Vdss (600V), Id (29A), and Qg (80nC) specifications. The STW34NM60N features superior on-state resistance (105mOhm versus 210mOhm), resulting in lower power dissipation and improved thermal performance. Both parts are ROHS3 compliant, MSL 1, and in active production status with substantial inventory availability (4933 units).

Secondary Equivalents (Current-Matched Substitutes):

The IXTH30N60L2 and IXTH30N60P from IXYS provide 30A continuous drain current, exceeding the APT6021BFLLG specification by 1A. Both maintain 600V Vdss and TO-247-3 packaging. These devices are suitable for applications where the additional current margin provides design flexibility. Both are ROHS3 compliant and in active production.

Current-Reduced Alternatives:

The IXFH28N60P3 (28A), IXTH26N60P (26A), FCH170N60 (22A), STW20NM60 (20A), and STW24N60DM2 (18A) provide reduced continuous drain current ratings. These parts are applicable only in applications where the lower current specification meets circuit requirements. All are ROHS3 compliant and in active production except R6024KNZ1C9, which is obsolete.

Compliance Status:

All active substitute parts maintain ROHS3 compliance, MSL 1 moisture sensitivity level, and REACH unaffected status, matching the regulatory profile of the APT6021BFLLG.

Frequently Asked Questions (FAQ)

Q: Can the STW34NM60N replace the APT6021BFLLG in all applications?

A: The STW34NM60N is electrically equivalent with identical voltage and current ratings. The lower on-state resistance (105mOhm versus 210mOhm) reduces power dissipation, which is beneficial in thermal-constrained designs. Both devices are pin-compatible in TO-247-3 packaging. Substitution is valid for direct replacement.

Q: What is the difference between the IXTH30N60L2 and IXTH30N60P?

A: Both devices provide 30A continuous drain current at 600V with TO-247-3 packaging. The IXTH30N60L2 is part of the Linear L2™ series with higher gate charge (335nC) and input capacitance (10700pF). The IXTH30N60P is part of the Polar series with lower gate charge (82nC) and input capacitance (5050pF). Selection depends on gate drive circuit requirements and switching frequency considerations.

Q: Why is the R6024KNZ1C9 listed as obsolete?

A: The R6024KNZ1C9 from Rohm Semiconductor is marked as obsolete product status. While it meets the electrical and mechanical substitution criteria (600V, 24A, TO-247-3), new designs should not incorporate this part. Existing designs using this part may transition to active alternatives such as STW24N60DM2 or FCH170N60.

Q: Can I use a lower-current device such as the STW20NM60 (20A) in place of the APT6021BFLLG (29A)?

A: Substitution with lower-current devices is valid only if the application circuit operates below the reduced current rating. The STW20NM60 provides 20A continuous drain current, which is 9A below the APT6021BFLLG specification. Use of this device in applications requiring 29A operation will result in device failure or thermal shutdown.

Q: Are all substitute parts available in the same packaging?

A: All substitute parts listed are available in TO-247-3 through-hole packaging, matching the APT6021BFLLG package specification. Pin configuration and mechanical dimensions are identical across all listed devices, enabling direct socket substitution without PCB modification.

Q: What is the significance of gate charge (Qg) differences among substitute parts?

A: Gate charge affects gate drive circuit design and switching speed. The APT6021BFLLG specifies 80nC at 10V. Substitute parts range from 29nC (STW24N60DM2) to 335nC (IXTH30N60L2). Lower gate charge reduces gate drive power requirements and enables faster switching. Higher gate charge requires stronger gate drive capability. Selection should align with existing gate drive circuit specifications.

Q: Do all substitute parts meet the same compliance standards?

A: All active substitute parts are ROHS3 compliant, MSL 1, and REACH unaffected, matching the APT6021BFLLG regulatory profile. The obsolete R6024KNZ1C9 also meets these standards but should not be used in new designs due to discontinued production status.

Q: What is the advantage of the STW34NM60N over the APT6021BFLLG?

A: The STW34NM60N provides superior on-state resistance performance (105mOhm versus 210mOhm at equivalent test conditions), resulting in approximately 50% lower conduction losses. This translates to reduced heat generation and improved thermal efficiency in high-frequency switching applications. Electrical ratings and packaging are identical.

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