APT6011B2VRG Equivalent & Substitute Parts

Part Overview

The APT6011B2VRG is an N-Channel 600V 49A through-hole MOSFET manufactured by Microchip Technology in the POWER MOS V® series. This device is packaged in TO-247-3 (T-MAX™ [B2]) configuration and is currently in Active product status with 902 units in stock. The APT6011B2VRG serves as a high-current switching element in power conversion applications requiring 600V blocking capability and continuous drain current up to 49A at 25°C.

Equivalent and substitute parts are identified based on matching or exceeding critical electrical parameters: drain-to-source voltage (Vdss), continuous drain current (Id), on-state resistance (Rds On), and gate charge (Qg). Substitutes must maintain compatible through-hole mounting in TO-247-3 or equivalent package variants to ensure mechanical and thermal compatibility in existing circuit designs.

Key Parameters

Parameter	APT6011B2VRG	Unit
Manufacturer	Microchip Technology	—
Part Number	APT6011B2VRG	—
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain-to-Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	49	A (Tc)
Rds On (Max) @ Id, Vgs	110	mOhm @ 24.5A, 10V
Vgs(th) (Max) @ Id	4	V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs	450	nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	8900	pF @ 25V
Mounting Type	Through Hole	—
Package / Case	TO-247-3 Variant	—
Product Status	Active	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the APT6011B2VRG are selected based on the following critical electrical and mechanical parameters:

Primary Matching Criteria:

Drain-to-Source Voltage (Vdss): 600V or higher
Continuous Drain Current (Id): 49A or higher at 25°C
On-State Resistance (Rds On): Comparable or lower values at specified gate voltage
Gate Charge (Qg): Lower or equivalent values to maintain switching performance
Package Type: TO-247-3 or compatible through-hole variants
Technology: N-Channel MOSFET (Metal Oxide or SiCFET)

Substitution Logic: Devices meeting or exceeding the APT6011B2VRG current rating (49A) with matching or superior voltage blocking capability (600V minimum) are classified as direct substitutes. Devices with lower current ratings (31A to 42A) are classified as partial substitutes suitable for applications with reduced current requirements. Devices with higher voltage ratings (650V) are suitable for applications requiring enhanced voltage margin. All substitute parts maintain through-hole mounting compatibility and RoHS3 compliance.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Package	Product Status
APT6011B2VRG	Microchip Technology	600	49	110 @ 24.5A, 10V	450 @ 10V	TO-247-3	Active
IXFX48N60Q3	IXYS	600	48	140 @ 24A, 10V	140 @ 10V	TO-247-3 Variant	Active
IXFR64N60Q3	IXYS	600	42	104 @ 32A, 10V	190 @ 10V	TO-247-3	Active
IPW60R099CPAFKSA1	Infineon Technologies	600	31	105 @ 18A, 10V	80 @ 10V	TO-247-3	Active
IPW60R099CPFKSA1	Infineon Technologies	650	31	99 @ 18A, 10V	80 @ 10V	TO-247-3	Not For New Designs
IPW60R099C6FKSA1	Infineon Technologies	600	37.9	99 @ 18.1A, 10V	119 @ 10V	TO-247-3	Not For New Designs
IPW60R125C6FKSA1	Infineon Technologies	600	30	125 @ 14.5A, 10V	96 @ 10V	TO-247-3	Not For New Designs
IPW65R110CFDAFKSA1	Infineon Technologies	650	31.2	110 @ 12.7A, 10V	118 @ 10V	TO-247-3	Active
IXFH34N65X2	IXYS	650	34	105 @ 17A, 10V	56 @ 10V	TO-247-3	Active
IXKH35N60C5	IXYS	600	35	100 @ 18A, 10V	70 @ 10V	TO-247-3	Active
SCT3080ALGC11	Rohm Semiconductor	650	30	104 @ 10A, 18V	48 @ 18V	TO-247-3	Active

Engineering Selection Recommendations

Direct Substitutes (Equivalent Current Rating):

The IXFX48N60Q3 from IXYS is the closest direct substitute, offering 48A continuous drain current at 600V with Active product status. This device maintains near-equivalent current handling with lower gate charge (140 nC vs. 450 nC), resulting in improved switching speed. The PLUS247™-3 package variant is mechanically compatible with TO-247-3 footprints.

Partial Substitutes (Reduced Current Rating, Enhanced Voltage or Performance):

For applications tolerating reduced current capacity, the following Active-status devices provide superior performance characteristics:

IPW60R099CPAFKSA1 (Infineon, 31A, 600V): Automotive-qualified (AEC-Q101) with significantly lower gate charge (80 nC). Suitable for automotive power conversion applications.
IPW65R110CFDAFKSA1 (Infineon, 31.2A, 650V): Automotive-qualified with 650V blocking voltage and Active product status. Recommended for designs requiring enhanced voltage margin.
IXFH34N65X2 (IXYS, 34A, 650V): Active status with lowest gate charge (56 nC) among substitutes, enabling fastest switching transitions. 650V rating provides voltage headroom.
IXKH35N60C5 (IXYS, 35A, 600V): Active status with balanced performance and low gate charge (70 nC).

Technology Alternative:

The SCT3080ALGC11 (Rohm Semiconductor) is a SiCFET (Silicon Carbide) technology device offering 30A at 650V with significantly reduced gate charge (48 nC @ 18V) and lower on-state resistance. SiCFET technology provides superior switching efficiency and thermal performance but requires gate drive voltage adjustment (18V vs. 10V).

Devices Not Recommended for New Designs:

IPW60R099CPFKSA1, IPW60R099C6FKSA1, and IPW60R125C6FKSA1 carry "Not For New Designs" product status and should be used only for legacy system maintenance or replacement applications.

Frequently Asked Questions (FAQ)

Q: Can the IXFX48N60Q3 directly replace the APT6011B2VRG in existing designs?

A: The IXFX48N60Q3 is mechanically and electrically compatible as a direct substitute. Both devices operate at 600V with nearly equivalent continuous drain current (48A vs. 49A). The IXFX48N60Q3 features significantly lower gate charge (140 nC vs. 450 nC), which improves switching speed and reduces gate drive power dissipation. No circuit modifications are required for pin-compatible TO-247-3 mounting.

Q: What is the difference between TO-247-3 and TO-247-3 Variant packages?

A: Both designations refer to the same three-pin through-hole package footprint used for power MOSFETs. Variant nomenclature indicates minor physical or thermal interface differences between manufacturers (such as T-MAX™ [B2] vs. standard TO-247-3), but pin spacing and mounting hole locations remain identical. Mechanical compatibility is maintained across all TO-247-3 variants listed.

Q: Why do some substitutes have lower current ratings than the APT6011B2VRG?

A: Partial substitutes with lower current ratings (31A to 35A) are included because many applications do not require the full 49A capability of the APT6011B2VRG. These devices often provide superior performance in other parameters such as lower gate charge, lower on-state resistance, or higher voltage ratings. Selection depends on actual circuit current requirements and performance priorities.

Q: Are Infineon CoolMOS™ devices suitable replacements?

A: Infineon CoolMOS™ devices (IPW60R099 and IPW65R110 series) are suitable partial substitutes with current ratings between 30A and 37.9A. The IPW60R099CPAFKSA1 and IPW65R110CFDAFKSA1 carry Active product status and include automotive qualification (AEC-Q101). These devices feature lower gate charge and optimized on-state resistance for efficient switching. Current rating must be verified against application requirements.

Q: What is the significance of the "Not For New Designs" product status?

A: Devices marked "Not For New Designs" are in mature or end-of-life phases and may have limited future availability. These parts are suitable only for replacement in existing systems or legacy applications. For new circuit designs, Active-status substitutes such as IXFX48N60Q3, IPW60R099CPAFKSA1, or IXFH34N65X2 are recommended to ensure long-term supply continuity.

Q: How does SiCFET technology (SCT3080ALGC11) differ from traditional MOSFET substitutes?

A: The SCT3080ALGC11 uses Silicon Carbide (SiC) semiconductor technology instead of silicon, resulting in significantly lower gate charge (48 nC), lower on-state resistance, and superior thermal performance. SiCFET devices require gate drive voltage adjustment (18V vs. 10V for silicon MOSFETs) and may require circuit modifications for optimal performance. SiCFET substitution is recommended only when switching efficiency and thermal management are critical design priorities.

Q: Can I use a 650V-rated device in a 600V application?

A: Yes. Devices with higher voltage ratings (650V) are fully compatible in 600V applications. The higher voltage rating provides additional blocking voltage margin and does not affect circuit operation. Devices such as IPW60R099CPFKSA1, IPW65R110CFDAFKSA1, and IXFH34N65X2 offer this advantage while maintaining equivalent or superior performance in other parameters.

Q: What is the impact of gate charge (Qg) differences on circuit performance?

A: Gate charge directly affects switching speed and gate drive power dissipation. Lower gate charge (such as 56 nC in IXFH34N65X2 vs. 450 nC in APT6011B2VRG) enables faster switching transitions, reduced switching losses, and lower gate driver power consumption. Higher gate charge requires more gate drive current and energy but does not prevent substitution if the gate driver is capable of supplying the required charge.

Q: Are all listed substitutes RoHS3 compliant?

A: Yes. All substitute parts listed in this reference carry RoHS3 compliance certification and Moisture Sensitivity Level (MSL) 1 (Unlimited), matching the environmental and handling requirements of the APT6011B2VRG.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message