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APT58M80J Equivalent & Substitute Parts Reference
Part Overview
The APT58M80J (Microchip Technology) is an N-Channel MOSFET designed for high-power switching applications. It features an 800 V drain-to-source voltage, 60A continuous drain current, and a maximum power dissipation of 960W, provided in a SOT-227 chassis mount package. The product is currently active and compliant with ROHS3 and REACH standards. Identifying direct alternatives for APT58M80J may be necessary for reasons such as multi-source qualification, risk mitigation against supply disruptions, or existing inventory exhaustion.
Substiute Parts
Key Parameters
| Parameter | Description |
|---|---|
| Drain to Source Voltage (Vdss) | Maximum voltage sustained between drain and source |
| Current - Continuous Drain (Id) @ 25°C | Maximum continuous drain current at 25°C case temperature |
| Rds On (Max) @ Id, Vgs | Maximum drain-source on resistance at specified current and gate-source voltage |
| Vgs(th) (Max) @ Id | Maximum gate threshold voltage at specified drain current |
| Gate Charge (Qg) (Max) @ Vgs | Maximum total gate charge at specified gate voltage |
| Input Capacitance (Ciss) (Max) @ Vds | Maximum input capacitance at specified drain-source voltage |
| Power Dissipation (Max) | Maximum power dissipation at case temperature |
| Vgs (Max) | Maximum gate-source voltage tolerance |
| Operating Temperature | Permitted junction temperature range |
| Mounting Type | Chassis mount (SOT-227, SOT-227B) |
| RoHS Status | Regulatory compliance with ROHS3 |
| REACH Status | Regulatory compliance with REACH |
| Moisture Sensitivity Level (MSL) | Level 1 (Unlimited) |
| Package / Case | SOT-227-4, miniBLOC |
| Product Status | Active |
Substitute Part Grouping Explanation
Component substitution for the APT58M80J is strictly determined by the following parameters:
Drain-to-source voltage (Vdss), continuous drain current (Id) at 25°C, Rds(on) (max), gate threshold voltage (Vgs(th)), maximum gate charge (Qg), input capacitance (Ciss), maximum power dissipation, maximum Vgs, operating temperature range, mounting type, package/case style, RoHS and REACH compliance, and product status. Only parts matching or closely approximating the provided values for these characteristics and maintaining the same mechanical footprint are considered substitutes in the Transistors, FETs, MOSFETs category.
Parameter Comparison
| Parameter | APT58M80J (Microchip Tech) | IXFN62N80Q3 (IXYS) | IXFN48N60P (IXYS) |
|---|---|---|---|
| Drain to Source Voltage (Vdss) | 800 V | 800 V | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) | 49A (Tc) | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 43A, 10V | 140mOhm @ 31A, 10V | 140mOhm @ 4A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 5mA | 6.5V @ 8mA | 5.5V @ 8mA |
| Gate Charge (Qg) (Max) @ Vgs | 570 nC @ 10 V | 270 nC @ 10 V | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 17550 pF @ 25 V | 13600 pF @ 25 V | 8860 pF @ 25 V |
| Power Dissipation (Max) | 960W (Tc) | 960W (Tc) | 625W (Tc) |
| Vgs (Max) | ±30V | ±30V | ±30V |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount | Chassis Mount | Chassis Mount |
| Package / Case | SOT-227-4, miniBLOC | SOT-227-4, miniBLOC | SOT-227-4, miniBLOC |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| REACH Status | REACH Unaffected | REACH Unaffected | REACH Unaffected |
| MSL | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
| Product Status | Active | Active | Active |
Engineering Selection Recommendations
All compared MOSFET part numbers share an active lifecycle status. Each substitute, IXFN62N80Q3 and IXFN48N60P, is ROHS3 compliant, REACH unaffected, and classified as MSL 1 (unlimited shelf life). All are packaged in the SOT-227-4, miniBLOC form and support chassis mounting.
Selection must be based on required regulatory certifications, compliance standards, and product status, using only the explicitly listed technical and regulatory parameters.
Frequently Asked Questions (FAQ)
Q1: What determines if a MOSFET can be substituted in this category?
Strict substitution criteria include drain-source voltage, continuous drain current, Rds(on), gate threshold voltage, gate charge, power dissipation, mechanical form factor, regulatory compliance, and product status.
Q2: Are all substitutes compatible with the same PCB footprint and mechanical mounting?
All listed alternatives (APT58M80J, IXFN62N80Q3, IXFN48N60P) use the SOT-227-4, miniBLOC chassis mount package.
Q3: Do the substitutes provide the same maximum electrical and thermal parameters?
Values for Vdss, Id, Rds(on), and power dissipation differ between parts. Selection must align with the required parameter limits for the intended application.
Q4: Are there differences in RoHS, REACH, or MSL status?
All parts are ROHS3 compliant, REACH unaffected, and have a moisture sensitivity level of 1 (unlimited).
Q5: Is the operating temperature range consistent across all listed parts?
All compared parts specify an operating junction temperature of -55°C to 150°C.
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