APT58F50J N-Channel 500V 58A MOSFET Equivalent & Substitute Parts

Part Overview

The APT58F50J is an N-Channel MOSFET manufactured by Microchip Technology, rated for 500V drain-to-source voltage with 58A continuous drain current at 25°C. This device is housed in an ISOTOP® (SOT-227-4, miniBLOC) chassis mount package and is designed for high-voltage switching applications requiring robust thermal performance up to 540W at the case temperature. The part maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1).

Equivalent and substitute parts are identified when design requirements permit tolerance of variations in electrical performance characteristics while maintaining compatibility with the same voltage class, package family, and thermal management approach. Substitution becomes necessary due to inventory availability, supply chain considerations, or application-specific performance optimization.

Substiute Parts

APT58F50J

Microchip TechnologyIn Stock: 1061APT58F50J Datasheet

Current PartRFQ

IXFN100N50P

IXYSIn Stock: 3149IXFN100N50P Datasheet

SimilarRFQ

IXFN80N50Q3

IXYSIn Stock: 883IXFN80N50Q3 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the APT58F50J is determined by strict alignment with the following critical parameters:

Mandatory Matching Criteria:

• Drain-to-Source Voltage (Vdss): 500V (exact match required)
• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Package Family: SOT-227-4, miniBLOC (Chassis Mount)
• Operating Temperature Range: -55°C to 150°C (TJ)
• Compliance: RoHS3, REACH Unaffected, MSL 1

Allowable Variation Parameters:

• Continuous Drain Current (Id): Equal to or greater than 58A
• On-State Resistance (Rds On): Equal to or less than 65mOhm (lower resistance is acceptable)
• Power Dissipation: Equal to or greater than 540W (higher dissipation capability is acceptable)
• Gate Charge (Qg): Variation permitted within switching performance envelope
• Input Capacitance (Ciss): Variation permitted within circuit design tolerance

The identified substitute parts IXFN100N50P and IXFN80N50Q3 satisfy all mandatory matching criteria and provide equal or superior electrical performance in the allowable variation parameters.

Parameter Comparison

Engineering Selection Recommendations

IXFN100N50P Selection Criteria:

The IXFN100N50P provides the highest current rating (90A) and lowest on-state resistance (49mOhm) among available substitutes. This device is suitable for applications where the APT58F50J current capacity requires margin or where reduced conduction losses are beneficial. The increased power dissipation capability (1040W) accommodates higher thermal loads. Gate charge is reduced to 240nC, resulting in faster switching transitions. All compliance certifications (RoHS3, REACH Unaffected, MSL 1) and operating temperature range (-55°C to 150°C) are maintained. Active product status ensures continued supply availability.

IXFN80N50Q3 Selection Criteria:

The IXFN80N50Q3 provides a moderate current rating increase (63A) with on-state resistance matching the main part (65mOhm). This device represents a direct performance equivalent with marginal current headroom. Gate charge is reduced to 200nC, enabling improved switching performance. Power dissipation capability is increased to 780W. The Q3 Class designation indicates enhanced reliability classification. All compliance certifications and operating temperature range are maintained. Active product status ensures supply continuity.

Compliance and Regulatory Alignment:

All substitute parts maintain identical compliance status to the APT58F50J: RoHS3 Compliant, REACH Unaffected, and MSL 1 (Unlimited). No regulatory or environmental restrictions are introduced through substitution. ECCN and HTSUS classifications remain consistent across all parts.

Frequently Asked Questions (FAQ)

Q: Can the IXFN100N50P be used as a direct replacement for the APT58F50J?

A: Yes. The IXFN100N50P meets all mandatory substitution criteria: 500V Vdss rating, N-Channel MOSFET technology, SOT-227-4 miniBLOC package, -55°C to 150°C operating range, and identical compliance certifications. The higher current rating (90A vs. 58A) and lower on-state resistance (49mOhm vs. 65mOhm) represent performance improvements. Gate charge reduction (240nC vs. 340nC) improves switching speed.

Q: What is the difference between IXFN100N50P and IXFN80N50Q3?

A: Both devices are 500V N-Channel MOSFETs in SOT-227-4 packages. The IXFN100N50P provides higher current capacity (90A vs. 63A) and lower on-state resistance (49mOhm vs. 65mOhm), resulting in lower conduction losses and higher power dissipation capability (1040W vs. 780W). The IXFN80N50Q3 offers a more conservative performance increase with on-state resistance matching the APT58F50J. Gate charge is lower in both substitutes, with the IXFN80N50Q3 providing the lowest value (200nC).

Q: Are there package compatibility concerns when substituting these parts?

A: No. All three parts use the SOT-227-4 miniBLOC chassis mount package. Physical dimensions, pin configuration, and thermal interface characteristics are identical. PCB layout and heatsink mounting require no modification.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the energy required to switch the device. The APT58F50J requires 340nC at 10V gate voltage. The IXFN100N50P requires 240nC and the IXFN80N50Q3 requires 200nC. Lower gate charge reduces driver power dissipation and enables faster switching transitions. Existing gate driver circuits designed for the APT58F50J will operate with reduced switching losses when using substitute parts with lower gate charge.

Q: What is the significance of the Q3 Class designation on the IXFN80N50Q3?

A: Q3 Class indicates enhanced reliability and quality classification per IXYS product standards. This designation reflects additional screening and testing protocols. The electrical performance parameters remain within the specified ranges. Selection of Q3 Class devices is appropriate for applications requiring higher reliability assurance.

Q: Can these parts be used interchangeably in existing designs?

A: Yes, within the constraints of circuit design margins. All three parts share identical voltage ratings, package types, and operating temperature ranges. Designs must accommodate the parameter variations listed in the comparison table. Applications with tight current or thermal margins should verify that substitute part ratings provide adequate headroom. Gate charge differences may require driver circuit evaluation if switching frequency is critical.

Q: What inventory considerations apply to these substitutes?

A: The APT58F50J has 1012 pieces in stock. The IXFN100N50P has 3080 pieces available, and the IXFN80N50Q3 has 859 pieces available. Substitute selection may be influenced by delivery requirements and supply chain availability.

Q: Are all parts RoHS3 compliant?

A: Yes. The APT58F50J, IXFN100N50P, and IXFN80N50Q3 are all RoHS3 Compliant with REACH Unaffected status. No environmental or regulatory restrictions apply to substitution.