Equivalent & Substitute Parts Reference for APT56M60L

Part Overview

APT56M60L is an N-Channel MOSFET (Metal Oxide) from Microchip Technology, categorized under Transistors, FETs, MOSFETs. It features a maximum drain-to-source voltage of 600 V, a continuous drain current of 60A (Tc), and a TO-264 through-hole package. Product status is Active, ROHS3 compliant, REACH unaffected, with unrestricted moisture sensitivity (MSL 1).

Finding alternative models is necessary in case of supply limitations, procurement policy, or inventory requirements for equivalent electrical and mechanical performance within the same product category and certification status.

Key Parameters

Parameter	APT56M60L
Manufacturer	Microchip Technology
Category	Transistors, FETs, MOSFETs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	130mOhm @ 28A, 10V
Vgs(th) (Max) @ Id	5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs	280 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	11300 pF @ 25 V
Power Dissipation (Max)	1040W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99

Substitute Part Grouping Explanation

Substitute parts for APT56M60L are matched strictly based on the following parameters: part category (Transistors, FETs, MOSFETs), FET type (N-Channel), technology (MOSFET, Metal Oxide), drain-to-source voltage (Vdss), continuous drain current (Id), drive voltage, Rds On, gate charge (Qg), power dissipation (Tc), maximum gate-source voltage (Vgs), input capacitance (Ciss), operating temperature, mounting type, package/case, and compliance status (RoHS, REACH, ECCN, MSL).

Parameter Comparison

Parameter	APT56M60L	IPW60R099CPAFKSA1	IXFB60N80P	IXFK48N60Q3
Manufacturer	Microchip Technology	Infineon Technologies	IXYS	IXYS
Category	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V	600 V	800 V	600 V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)	31A (Tc)	60A (Tc)	48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	10V	10V	10V
Rds On (Max) @ Id, Vgs	130mOhm @ 28A, 10V	105mOhm @ 18A, 10V	140mOhm @ 30A, 10V	140mOhm @ 24A, 10V
Vgs(th) (Max) @ Id	5V @ 2.5mA	3.5V @ 1.2mA	5V @ 8mA	6.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	280 nC @ 10 V	80 nC @ 10 V	250 nC @ 10 V	140 nC @ 10 V
Vgs (Max)	±30V	±20V	±30V	±30V
Input Capacitance (Ciss) (Max) @ Vds	11300 pF @ 25 V	2800 pF @ 100 V	18000 pF @ 25 V	7020 pF @ 25 V
Power Dissipation (Max)	1040W (Tc)	255W (Tc)	1250W (Tc)	1000W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	-40°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-264-3, TO-264AA	TO-247-3	TO-264-3, TO-264AA	TO-264-3, TO-264AA
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected
ECCN	EAR99	EAR99	EAR99	EAR99

Engineering Selection Recommendations

All substitute MOSFETs listed (IPW60R099CPAFKSA1, IXFB60N80P, IXFK48N60Q3) have an active product status, are ROHS3 compliant, have REACH unaffected status, and are classified as ECCN EAR99 with a moisture sensitivity level of 1 (Unlimited). Only substitute MOSFETs within these compliance certificates and statuses should be selected for applications requiring equivalent electrical, mechanical, and compliance parameters.

Frequently Asked Questions (FAQ)

Q1: What technical parameters determine if these MOSFETs can substitute APT56M60L?
A1: Substitute parts must match the category (Transistors, FETs, MOSFETs), FET type (N-Channel), general technology, operating voltage, maximum current, drive voltage, Rds On, gate charge, power dissipation, Vgs, input capacitance, mounting type, operating temperature, and package/case. Compliance with RoHS, REACH, MSL, and ECCN must also align.

Q2: Are there packaging or mounting considerations when substituting?
A2: Substitute MOSFETs must use compatible through-hole mounting and package/case types. Only the specified formats in the provided parameters are allowable.

Q3: Is product status important for substitution?
A3: Only substitute MOSFETs with "Active" product status should be selected.

Q4: Can differences in voltage rating, current rating, or package result in incompatibility?
A4: Substitute selection is permitted only within the strict parameter limits provided for voltage, current, and package type using the specific part numbers listed.

Q5: Do compliance and certification parameters affect substitute choices?
A5: Substitute parts must match or exceed compliance requirements such as ROHS3, REACH unaffected status, MSL 1, and ECCN EAR99.

Q6: How are input capacitance, gate charge, and Rds On parameters evaluated?
A6: Only values explicitly listed in the comparison may be used for direct component substitution decisions. No extrapolation beyond given values is permitted.

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