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APT56M50L Equivalent & Substitute Parts Reference
Part Overview
The APT56M50L is an N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) from Microchip Technology, categorized under Transistors, FETs, MOSFETs. It features a drain-to-source voltage rating of 500V, continuous drain current up to 56A (Tc), and a maximum power dissipation of 780W (Tc). The device is supplied in a TO-264 package for through-hole mounting and is RoHS3 compliant. The product is active, with a standard operating temperature range of -55°C to 150°C (TJ).
Alternative models such as IXTK60N50L2 are considered to address design-for-availability concerns, dual sourcing needs, or supply interruptions while maintaining functional and mechanical compatibility.
Substiute Parts
Key Parameters
| Manufacturer Part Number | Category | Packaging | Description | Detailed Description | Series | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | ECCN |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| APT56M50L | Transistors, FETs, MOSFETs | Tube | MOSFET N-CH 500V 56A TO264 | N-Channel 500 V 56A (Tc) 780W (Tc) Through Hole TO-264 | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 56A (Tc) | 10V | 100mOhm @ 28A, 10V | 5V @ 2.5mA | 220 nC @ 10 V | ±30V | 8800 pF @ 25 V | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 | TO-264-3, TO-264AA | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 |
Substitute Part Grouping Explanation
Substitution is determined strictly by matching key electrical and mechanical parameters, including FET type, technology, drain-to-source voltage (Vdss), continuous drain current (Id), Rds On, gate threshold voltage (Vgs(th)), gate charge (Qg), Vgs (Max), input capacitance (Ciss), power dissipation, mounting type, and package/case. Compliance and product status are also matched. All listed substitutes conform to these parameters.
Parameter Comparison
| Parameter | APT56M50L | IXTK60N50L2 |
|---|---|---|
| Manufacturer | Microchip Technology | IXYS |
| Category | Transistors, FETs, MOSFETs | Transistors, FETs, MOSFETs |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 28A, 10V | 100mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA | 4.5V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 220 nC @ 10 V | 610 nC @ 10 V |
| Vgs (Max) | ±30V | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 8800 pF @ 25 V | 24000 pF @ 25 V |
| Power Dissipation (Max) | 780W (Tc) | 960W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | TO-264 | TO-264 (IXTK) |
| Package / Case | TO-264-3, TO-264AA | TO-264-3, TO-264AA |
| Product Status | Active | Active |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
| REACH Status | REACH Unaffected | REACH Unaffected |
| ECCN | EAR99 | EAR99 |
Engineering Selection Recommendations
Both APT56M50L and IXTK60N50L2 are classified as active products and are ROHS3 compliant. Both parts are REACH unaffected, have MSL 1 (Unlimited), and share the same ECCN (EAR99) classification. These compliance statuses indicate suitability for designs requiring RoHS conformity and unrestricted moisture sensitivity handling.
Frequently Asked Questions (FAQ)
Q: What electrical parameters must match when choosing a substitute for the APT56M50L?
A: FET type, technology, drain-to-source voltage (Vdss), continuous drain current (Id), Rds On, gate threshold voltage (Vgs(th)), gate charge (Qg), and input capacitance (Ciss) must align within compatible ranges.
Q: Are the packages and mounting types identical between APT56M50L and IXTK60N50L2?
A: Both devices utilize the TO-264-3, TO-264AA package and support through-hole mounting, ensuring physical compatibility for PCB designs.
Q: Is there any difference in compliance status between the main and substitute part?
A: Both APT56M50L and IXTK60N50L2 are ROHS3 compliant, REACH unaffected, classified as MSL 1 (Unlimited), and share the ECCN EAR99.
Q: Why is it necessary to verify input capacitance and gate charge when substituting MOSFETs?
A: Variations in input capacitance (Ciss) and gate charge (Qg) can affect gate driver requirements and switching performance in certain applications.
Q: Are both the main and substitute parts currently active in production status?
A: Yes, both the APT56M50L and IXTK60N50L2 are active products.
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