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APT56M50B2 Equivalent & Substitute Parts Reference
Part Overview
The Microchip Technology APT56M50B2 is an N-Channel MOSFET in the Transistors, FETs, MOSFETs category, designed for high-power applications requiring up to 500 V drain-source voltage and 56A continuous drain current. It is provided in a TO-247-3 variant (T-MAX™) through-hole package. The product is actively supported and available in new original stock. Finding alternative models ensures flexibility in sourcing and permits component interchangeability for designs requiring identical electrical and mechanical parameters, as determined by explicit datasheet values.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Manufacturer Part Number | APT56M50B2 |
| Manufacturer | Microchip Technology |
| Category | Transistors, FETs, MOSFETs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 28A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 220 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 8800 pF @ 25 V |
| Power Dissipation (Max) | 780W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | T-MAX™ |
| Package / Case | TO-247-3 Variant |
| RoHS Status | ROHS3 Compliant |
| MSL | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
Substitute Part Grouping Explanation
The substitute part group includes components whose electrical and mechanical parameters precisely match the main part number APT56M50B2. Substitution is allowed only when all the following key criteria are identical: FET type, technology, drain to source voltage (Vdss), continuous drain current (Id), maximum on-resistance (Rds On), gate threshold voltage (Vgs(th)), maximum gate charge (Qg), maximum gate-source voltage (Vgs), input capacitance (Ciss), power dissipation, operating temperature range, mounting type, device package, RoHS status, moisture sensitivity level (MSL), and REACH status.
Parameter Comparison
| Parameter | APT56M50B2 | APT56F50B2 |
|---|---|---|
| Manufacturer | Microchip Technology | Microchip Technology |
| Category | Transistors, FETs, MOSFETs | Transistors, FETs, MOSFETs |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) | 56A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 28A, 10V | 100mOhm @ 28A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA | 5V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 220 nC @ 10 V | 220 nC @ 10 V |
| Vgs (Max) | ±30V | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 8800 pF @ 25 V | 8800 pF @ 25 V |
| Power Dissipation (Max) | 780W (Tc) | 780W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | T-MAX™ | T-MAX™ [B2] |
| Package / Case | TO-247-3 Variant | TO-247-3 Variant |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
| MSL | 1 (Unlimited) | 1 (Unlimited) |
| REACH Status | REACH Unaffected | REACH Unaffected |
| ECCN | EAR99 | EAR99 |
| HTSUS | 8541.29.0095 | 8541.29.0095 |
Engineering Selection Recommendations
Both APT56M50B2 and substitute APT56F50B2 are active products, available in stock, ROHS3 compliant, and REACH unaffected. Their moisture sensitivity level is 1 (Unlimited), and they have matching ECCN and HTSUS codes. Selection may be based directly on supply chain requirements and compliance needs.
Frequently Asked Questions (FAQ)
Q1: What electrical parameters must match for a substitute in this category?
A1: Accepted substitutes must have identical drain to source voltage (Vdss), continuous drain current (Id), Rds On, Vgs(th), gate charge (Qg), Vgs(max), input capacitance (Ciss), and power dissipation.
Q2: Are mechanical and package parameters critical for MOSFET substitution?
A2: Yes. Package / case type (TO-247-3 Variant), mounting type (through hole), and device package (T-MAX™) must be the same for compatibility.
Q3: What compliance certifications are required for substitutes?
A3: Substitute components must be ROHS3 compliant, REACH unaffected, and have matching MSL, ECCN, and HTSUS designations.
Q4: Can APT56F50B2 be used directly as an equivalent for APT56M50B2?
A4: Yes, according to the provided parameters, APT56F50B2 meets all electrical, mechanical, and compliance criteria for equivalence.
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