Equivalent & Substitute Parts Reference: APT56F60L

Part Overview

Manufacturer Part Number APT56F60L is an active, ROHS3-compliant, through-hole N-channel MOSFET within the POWER MOS 8™ series from Microchip Technology. It features a 600V drain-to-source voltage, 60A continuous drain current at 25°C, and is supplied in a TO-264 [L] package suitable for high-power applications. This page provides electrical and mechanical equivalents and substitutes to assist engineers when direct replacement is necessary due to inventory availability, system design requirements, or compliance constraints.

Substiute Parts

APT56F60L

Microchip TechnologyIn Stock: 790APT56F60L Datasheet

Current PartRFQ

IPW60R099CPAFKSA1

Infineon TechnologiesIn Stock: 989IPW60R099CPAFKSA1 Datasheet

SimilarRFQ

IXFB60N80P

IXYSIn Stock: 32719IXFB60N80P Datasheet

SimilarRFQ

IXFK48N60Q3

IXYSIn Stock: 927IXFK48N60Q3 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute relationships for APT56F60L are determined using parameters essential to the MOSFET category: Drain to Source Voltage (Vdss), Continuous Drain Current (Id), Rds On at specified Id and Vgs, Gate Threshold Voltage (Vgs(th)), Gate Charge (Qg), Vgs (Max), Input Capacitance (Ciss), Power Dissipation, Operating Temperature, and package or case type. Only MOSFETs matching or closely aligning with these key features and with equal compliance and mounting style are considered valid substitutes. Substitute parts listed here share these essential electrical and mechanical characteristics.

Parameter Comparison

Engineering Selection Recommendations

All substitute MOSFETs listed for APT56F60L, including IPW60R099CPAFKSA1, IXFB60N80P, and IXFK48N60Q3, are active, ROHS3-compliant, and have unlimited moisture sensitivity level (MSL 1). They maintain REACH unaffected status and adhere to similar compliance requirements suitable for high-power through-hole MOSFET applications. Only certified and currently active devices with matching compliance criteria are considered. Packaging and mounting form factors must also match the original requirements as specified.

Frequently Asked Questions (FAQ)

Q1: Which key electrical parameters should be matched when selecting a substitute for APT56F60L?
A: Match Drain to Source Voltage (Vdss), Continuous Drain Current (Id), Rds On value, Gate Threshold Voltage (Vgs(th)), Gate Charge (Qg), Vgs (Max), and Input Capacitance (Ciss). Only these explicitly provided parameters should be considered.

Q2: How important is the package type for substituting a high-power MOSFET?
A: The package or case (e.g., TO-264-3, TO-264AA) directly influences mechanical compatibility and thermal performance. Select substitutes with the same or equivalent through-hole package as specified.

Q3: What compliance and inventory parameters must be verified?
A: Substitute devices must be ROHS3 compliant, have MSL 1 (Unlimited), REACH unaffected status, and active product status. Only substitute MOSFETs with matching compliance and inventory parameters listed are suitable.

Q4: Should device features not explicitly listed be considered?
A: Only parameters explicitly provided should guide substitution decisions. No assumptions or extrapolations beyond the documented input data are permitted.

Q5: Can a device with higher or lower continuous drain current be considered equivalent?
A: Only the specified values from the provided data should guide equivalency. Substitutes with corresponding continuous drain current values listed may be considered in accordance with all other matching parameters.