APT56F50L Equivalent & Substitute Parts

Part Overview

The APT56F50L is an N-Channel power MOSFET manufactured by Microchip Technology, rated for 500V drain-to-source voltage with 56A continuous drain current at 25°C. This device is packaged in a TO-264 through-hole configuration and is designed for high-power switching applications requiring robust thermal performance up to 780W at the case temperature. The part is currently in active production status and fully compliant with RoHS3 and REACH regulations.

Substitute parts become necessary when the primary device experiences extended lead times, inventory constraints, or when design flexibility permits operation within the electrical and mechanical parameters of alternative qualified components. The substitute devices listed maintain compatibility through matching voltage ratings, package types, and thermal operating ranges while accommodating variations in current ratings and on-resistance characteristics.

Substiute Parts

APT56F50L
Microchip TechnologyIn Stock: 864APT56F50L Datasheet
APT56F50L
Current Part
FQL40N50F
onsemiIn Stock: 18775FQL40N50F Datasheet
FQL40N50F
Similar
IXTK60N50L2
IXYSIn Stock: 2436IXTK60N50L2 Datasheet
IXTK60N50L2
Similar

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 500 V
Continuous Drain Current (Id) @ 25°C 56 A (Tc)
On-Resistance (Rds On Max) @ 28A, 10V 100 mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 2.5mA 5 V
Power Dissipation (Max) 780 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type TO-264-3 Through Hole
Gate Charge (Qg Max) @ 10V 220 nC
Input Capacitance (Ciss Max) @ 25V 8800 pF

Substitute Part Grouping Explanation

Substitution eligibility for the APT56F50L is determined by strict adherence to the following electrical and mechanical parameters:

Mandatory Matching Parameters:

  • Drain to Source Voltage (Vdss): 500V (exact match required)
  • Package Type: TO-264 through-hole configuration (mechanical compatibility)
  • Operating Temperature Range: -55°C to 150°C (thermal envelope)
  • FET Type: N-Channel (functional requirement)
  • Technology: MOSFET Metal Oxide (device class)

Allowable Variation Parameters:

  • Continuous Drain Current (Id): Substitute must equal or exceed 56A
  • On-Resistance (Rds On): Substitute must not exceed 100mOhm at rated conditions
  • Gate Charge (Qg): Variation permitted within thermal and switching performance constraints
  • Input Capacitance (Ciss): Variation permitted based on application switching frequency requirements
  • Power Dissipation: Substitute must support minimum 780W thermal capability

The substitute parts FQL40N50F and IXTK60N50L2 satisfy these criteria through matching voltage and package specifications while accommodating current and thermal performance variations within acceptable design margins.

Parameter Comparison

Parameter APT56F50L (Main) FQL40N50F (Substitute) IXTK60N50L2 (Substitute) Unit
Manufacturer Microchip Technology onsemi IXYS
Drain to Source Voltage (Vdss) 500 500 500 V
Continuous Drain Current (Id) @ 25°C 56 40 60 A (Tc)
On-Resistance (Rds On Max) 100 @ 28A, 10V 110 @ 20A, 10V 100 @ 30A, 10V mOhm
Gate Threshold Voltage (Vgs(th) Max) 5 @ 2.5mA 5 @ 250µA 4.5 @ 250µA V
Gate Charge (Qg Max) @ 10V 220 200 610 nC
Input Capacitance (Ciss Max) @ 25V 8800 7500 24000 pF
Power Dissipation (Max) 780 460 960 W (Tc)
Operating Temperature Range -55 to 150 -55 to 150 -55 to 150 °C (TJ)
Package Type TO-264-3 TO-264-3 TO-264 (IXTK) Through Hole
Product Status Active Obsolete Active
RoHS3 Compliance Compliant Compliant Compliant
REACH Status Unaffected Unaffected Unaffected

Engineering Selection Recommendations

APT56F50L (Primary Selection)

The APT56F50L remains the preferred component for new designs and production continuity. This device maintains active product status with Microchip Technology, ensuring long-term availability and supply chain stability. The part delivers balanced performance across all specified parameters with 56A continuous current capability and 780W power dissipation. Full RoHS3 and REACH compliance supports regulatory requirements across global markets. Current inventory of 816 pieces supports immediate procurement needs.

IXTK60N50L2 (Preferred Substitute)

The IXTK60N50L2 from IXYS is the primary substitute option when APT56F50L availability is constrained. This device exceeds the current rating specification at 60A continuous drain current and provides superior power dissipation capability at 960W, enabling operation in thermally demanding applications. The matching 500V voltage rating and TO-264 package ensure direct mechanical and electrical compatibility. Active product status and RoHS3 compliance maintain regulatory alignment. The higher gate charge of 610nC and input capacitance of 24000pF require gate driver evaluation for switching frequency applications above 50kHz. Inventory availability of 2400 pieces supports production requirements.

FQL40N50F (Secondary Substitute)

The FQL40N50F from onsemi is available as a secondary substitute option with significant inventory availability of 18700 pieces. This device operates at 40A continuous drain current, representing a 29% reduction from the APT56F50L specification. The 460W power dissipation rating limits thermal headroom in high-power applications. The obsolete product status indicates no further development or long-term support from the manufacturer. This substitute is suitable only for applications where the 40A current rating and 460W thermal budget satisfy design requirements and where extended lead times on primary devices justify the performance trade-off. The lower gate charge of 200nC and input capacitance of 7500pF provide switching performance advantages in high-frequency applications.

Frequently Asked Questions (FAQ)

Q: Can the FQL40N50F replace the APT56F50L in all applications?

A: No. The FQL40N50F is rated for 40A continuous drain current compared to the APT56F50L specification of 56A. Applications requiring sustained current above 40A will exceed this device's electrical rating. Additionally, the 460W power dissipation maximum is 40% lower than the APT56F50L, limiting thermal performance in high-power switching circuits. The obsolete product status also restricts long-term availability.

Q: Is the IXTK60N50L2 a direct pin-for-pin replacement?

A: Yes. The IXTK60N50L2 maintains identical TO-264 package pinout and electrical interface with the APT56F50L. Both devices feature three leads in the TO-264-3 configuration. Gate driver circuits require evaluation for the higher gate charge specification (610nC versus 220nC) to ensure adequate drive current at the intended switching frequency.

Q: What is the impact of higher gate charge on circuit performance?

A: Gate charge directly affects switching speed and gate driver power dissipation. The IXTK60N50L2 gate charge of 610nC is 2.77 times higher than the APT56F50L at 220nC. This requires proportionally higher gate drive current to achieve equivalent switching speeds. Applications operating above 50kHz switching frequency should evaluate gate driver capability to prevent thermal stress and switching losses. Lower switching frequencies below 10kHz experience minimal performance impact.

Q: Are all substitute parts RoHS3 and REACH compliant?

A: Yes. Both the FQL40N50F and IXTK60N50L2 maintain RoHS3 compliance and REACH unaffected status, matching the regulatory posture of the APT56F50L. All three devices are suitable for applications requiring environmental compliance across global markets.

Q: What is the significance of product status (Active versus Obsolete)?

A: Active product status indicates ongoing manufacturer support, continued production, and long-term availability. The APT56F50L and IXTK60N50L2 maintain active status, supporting design continuity and supply chain reliability. The FQL40N50F obsolete status indicates the manufacturer has discontinued development and production. Designs incorporating obsolete components face eventual supply termination and should transition to active alternatives during product lifecycle planning.

Q: Can the APT56F50L operate at the full 56A rating continuously at 150°C junction temperature?

A: The 56A continuous drain current specification applies at 25°C case temperature. At elevated junction temperatures approaching 150°C, thermal derating applies. Actual continuous current capability decreases as junction temperature increases due to increased on-resistance and thermal resistance limitations. Thermal analysis specific to the application's heat dissipation design is required to determine sustainable current at elevated temperatures.

Q: What packaging considerations apply to these through-hole devices?

A: All three devices utilize through-hole TO-264 package configurations suitable for wave soldering and manual assembly processes. The TO-264-3 designation indicates three leads: Gate, Drain, and Source. PCB layout must accommodate the larger footprint compared to surface-mount alternatives. Thermal management through copper area and via placement directly beneath the drain tab is critical for achieving rated power dissipation specifications.

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