APT50M80B2VRG N-Channel 500V 58A MOSFET Equivalent & Substitute Parts

Part Overview

The APT50M80B2VRG is an N-Channel 500V 58A (Tc) Through Hole MOSFET manufactured by Microsemi Corporation in the POWER MOS V® series. This device features a T-MAX™ [B2] package (TO-247-3 variant) and is classified as obsolete. Due to its obsolete product status, equivalent and substitute parts from active manufacturers are necessary to maintain design continuity and ensure ongoing component availability for new production and field replacements.

Substiute Parts

APT50M80B2VRG
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APT50M80B2VRG
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Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 500 V
Continuous Drain Current (Id) @ 25°C 58 A (Tc)
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ Id, Vgs 80 mOhm @ 29A, 10V
Vgs(th) (Max) @ Id 4 V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 423 nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 8797 pF @ 25V
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the APT50M80B2VRG is determined by strict alignment of the following electrical and mechanical parameters:

Critical Matching Parameters:

  • Drain to Source Voltage (Vdss): 500V (exact match required)
  • FET Type: N-Channel (exact match required)
  • Technology: MOSFET (Metal Oxide) (exact match required)
  • Mounting Type: Through Hole (exact match required)
  • Drive Voltage: 10V (exact match required)

Performance Parameters (allowable variation):

  • Continuous Drain Current (Id) @ 25°C: 58A or greater
  • Rds On (Max) @ Id, Vgs: 80mOhm or lower (lower is acceptable)
  • Gate Charge (Qg): 423nC or lower (lower is acceptable)
  • Input Capacitance (Ciss): 8797pF or lower (lower is acceptable)

Package Compatibility: The APT50M80B2VRG uses a TO-247-3 variant package. Substitute parts must use compatible through-hole packages: TO-247-3 variant, TO-264-3, TO-264AA, ISOPLUS247™, or PLUS247™-3.

All substitute parts listed are from IXYS Corporation, a manufacturer of active HiPerFET™ series MOSFETs with equivalent or superior electrical performance and full compliance certifications.

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On Max (mOhm) Qg Max (nC) Ciss Max (pF) Package Status
APT50M80B2VRG Microsemi 500 58 80 @ 29A, 10V 423 @ 10V 8797 @ 25V TO-247-3 Variant Obsolete
IXFK64N50Q3 IXYS 500 64 85 @ 32A, 10V 145 @ 10V 6950 @ 25V TO-264AA Active
IXFK78N50P3 IXYS 500 78 68 @ 500mA, 10V 147 @ 10V 9900 @ 25V TO-264AA Active
IXFR64N50P IXYS 500 35 95 @ 32A, 10V 150 @ 10V 8700 @ 25V TO-247-3 Active
IXFR64N50Q3 IXYS 500 45 95 @ 32A, 10V 145 @ 10V 6950 @ 25V TO-247-3 Active
IXFR80N50P IXYS 500 45 72 @ 40A, 10V 197 @ 10V 12700 @ 25V TO-247-3 Active
IXFR80N50Q3 IXYS 500 50 72 @ 40A, 10V 200 @ 10V 10000 @ 25V TO-247-3 Active
IXFX64N50P IXYS 500 64 85 @ 32A, 10V 150 @ 10V 8700 @ 25V TO-247-3 Variant Active
IXFX64N50Q3 IXYS 500 64 85 @ 32A, 10V 145 @ 10V 6950 @ 25V TO-247-3 Variant Active
IXFX78N50P3 IXYS 500 78 68 @ 500mA, 10V 147 @ 10V 9900 @ 25V TO-247-3 Variant Active

Engineering Selection Recommendations

Primary Substitutes (Highest Compatibility):

IXFX64N50P and IXFX64N50Q3 are the primary substitutes for the APT50M80B2VRG. Both devices use the PLUS247™-3 package, which is a TO-247-3 variant compatible with the original T-MAX™ [B2] footprint. These parts deliver 64A continuous drain current, exceeding the original 58A specification, with Rds On values of 85mOhm that remain within acceptable operating parameters. Both are active products with full RoHS3 compliance and REACH unaffected status.

IXFX78N50P3 provides the highest current capability at 78A with superior Rds On performance (68mOhm), also in a TO-247-3 variant package. This device is suitable for applications requiring enhanced thermal headroom or higher current margins.

Secondary Substitutes (Package Variant Consideration):

IXFR64N50Q3 and IXFR80N50Q3 use the ISOPLUS247™ package, a TO-247-3 variant with enhanced thermal characteristics. IXFR64N50Q3 delivers 45A at 95mOhm Rds On, while IXFR80N50Q3 provides 50A at 72mOhm Rds On. These devices are suitable for designs where thermal performance is prioritized.

IXFK64N50Q3 and IXFK78N50P3 use the TO-264AA package, a through-hole alternative with different pin configuration. These are suitable only if PCB layout can accommodate the TO-264AA footprint.

Compliance and Availability:

All substitute parts are manufactured by IXYS, an active supplier with established distribution channels. All parts carry RoHS3 compliance and REACH unaffected status, meeting current regulatory requirements. Inventory availability ranges from 657 to 6996 pieces across the substitute portfolio.

Frequently Asked Questions (FAQ)

Q: Can IXFX64N50P directly replace APT50M80B2VRG without PCB modification?

A: Yes. IXFX64N50P uses the PLUS247™-3 package, which is a TO-247-3 variant compatible with the original T-MAX™ [B2] footprint. No PCB layout changes are required.

Q: What is the difference between IXFX64N50P and IXFX64N50Q3?

A: Both devices are 64A MOSFETs in TO-247-3 variant packages with identical Rds On specifications (85mOhm @ 32A, 10V). The primary difference is gate charge: IXFX64N50P has 150nC while IXFX64N50Q3 has 145nC. IXFX64N50Q3 is classified as Q3 Class with lower input capacitance (6950pF vs 8700pF), providing faster switching characteristics.

Q: Why does IXFX78N50P3 have lower Rds On (68mOhm) than the original part (80mOhm)?

A: Lower Rds On is a performance improvement, not a limitation. This reduces conduction losses and heat generation, making IXFX78N50P3 suitable for the same applications with enhanced efficiency.

Q: Can I use IXFK64N50Q3 or IXFK78N50P3 as substitutes?

A: These parts meet all electrical specifications but use the TO-264AA package instead of TO-247-3. Substitution requires PCB redesign to accommodate the different pin configuration. Use only if layout modification is feasible.

Q: What is the significance of the "Polar3™" designation in IXFX78N50P3?

A: Polar3™ is an IXYS technology designation indicating optimized switching performance. This does not affect pin compatibility or electrical substitution criteria; it indicates enhanced switching characteristics within the HiPerFET™ series.

Q: Are all substitute parts RoHS compliant?

A: Yes. All IXYS substitute parts listed carry RoHS3 compliance certification and REACH unaffected status, meeting current environmental and regulatory requirements.

Q: What is the operating temperature range for substitute parts?

A: All IXYS substitute parts operate across the temperature range of -55°C to 150°C (TJ), providing thermal performance suitable for industrial and high-reliability applications.

Q: Can I use a lower current-rated substitute if my application only requires 50A?

A: IXFR64N50Q3 (45A) and IXFR80N50P (45A) are below the 50A threshold and not recommended. Use IXFR80N50Q3 (50A) or higher-rated devices such as IXFX64N50P/Q3 (64A) or IXFX78N50P3 (78A) to maintain design margin.

Q: What is the difference between ISOPLUS247™ and PLUS247™-3 packages?

A: Both are TO-247-3 variants with enhanced thermal performance compared to standard TO-247. ISOPLUS247™ (used in IXFR series) and PLUS247™-3 (used in IXFX series) are mechanically compatible with the original TO-247-3 footprint. Consult device datasheets for specific thermal and mechanical specifications.

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