Equivalent & Substitute Parts Reference for Microchip APT50M65LLLG

Part Overview

Microchip Technology's APT50M65LLLG is an N-Channel Power MOSFET under the POWER MOS 7® series, designed for high voltage and high current applications. This device features a Drain-Source Voltage (Vdss) of 500 V, continuous drain current of 67A (Tc), and is offered in a TO-264 package for through-hole mounting. The product status is listed as Active. Selecting alternative or equivalent models is frequently necessary when inventory levels change, supply constraints arise, or design requirements mandate alternate sourcing within defined electrical and mechanical parameters.

Key Parameters

Parameter	Value
Manufacturer	Microchip Technology
Manufacturer Part Number	APT50M65LLLG
Category	Transistors, FETs, MOSFETs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	67A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	65mOhm @ 33.5A, 10V
Vgs(th) (Max) @ Id	5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs	141 nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	7010 pF @ 25 V
Power Dissipation (Max)	694W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
RoHS Status	ROHS3 Compliant
REACH Status	REACH Unaffected

Substitute Part Grouping Explanation

Substitute parts listed for APT50M65LLLG have been grouped based on strict matching of essential electrical and mechanical characteristics, including FET type, technology, drain-source voltage (Vdss), continuous drain current (Id), drive voltage, Rds(on), gate charge (Qg), maximum Vgs, capacitance, power dissipation, operating temperature range, mounting method, and package/case. Only parts with equivalent or superior ratings across these key parameters are included for direct substitution.

Parameter Comparison

Parameter	APT50M65LLLG (Microchip)	FDL100N50F (onsemi)	IXFB100N50Q3 (IXYS)	IXFK78N50P3 (IXYS)	IXFK80N50P (IXYS)	IXFK80N50Q3 (IXYS)
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V	500 V	500 V	500 V	500 V	500 V
Current - Continuous Drain (Id) @ 25°C	67A (Tc)	100A (Tc)	100A (Tc)	78A (Tc)	80A (Tc)	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	10V	10V	10V	10V	10V
Rds On (Max) @ Id, Vgs	65mOhm @ 33.5A, 10V	55mOhm @ 50A, 10V	49mOhm @ 50A, 10V	68mOhm @ 500mA, 10V	65mOhm @ 40A, 10V	65mOhm @ 40A, 10V
Vgs(th) (Max) @ Id	5V @ 2.5mA	5V @ 250µA	6.5V @ 8mA	5V @ 4mA	5V @ 8mA	6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs	141 nC @ 10V	238 nC @ 10V	255 nC @ 10V	147 nC @ 10V	197 nC @ 10V	200 nC @ 10V
Vgs (Max)	±30V	±30V	±30V	±30V	±30V	±30V
Input Capacitance (Ciss) (Max) @ Vds	7010 pF @ 25V	12000 pF @ 25V	13800 pF @ 25V	9900 pF @ 25V	12700 pF @ 25V	10000 pF @ 25V
Power Dissipation (Max)	694W (Tc)	2500W (Tc)	1560W (Tc)	1130W (Tc)	1040W (Tc)	1250W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-264-3, TO-264AA	TO-264-3, TO-264AA	TO-264-3, TO-264AA	TO-264-3, TO-264AA	TO-264-3, TO-264AA	TO-264-3, TO-264AA
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

All listed substitute models maintain Active product status and comply with ROHS3 and REACH requirements, ensuring compatibility for regulated applications. Certification parameters such as RoHS status and REACH status are matched for each alternative. Substitute MOSFETs are supplied in equivalent package types (TO-264-3, TO-264AA) and mounting methods. Each substitute device strictly adheres to the provided compliance and certification information.

Frequently Asked Questions (FAQ)

Q: What are the primary parameters to consider when selecting a substitute for APT50M65LLLG?
A: The primary parameters are FET type, technology, Drain-Source Voltage (Vdss), continuous drain current (Id), Rds(on), drive voltage, gate charge (Qg), input capacitance, maximum Vgs, power dissipation, operating temperature range, mounting type, and package/case. Compliance statuses (RoHS, REACH) are also essential.

Q: Are all substitute parts provided in the same package type and suitable for through-hole mounting?
A: Yes, all listed substitutes are specified with TO-264-3 or TO-264AA packages and through-hole mounting.

Q: What are the certification and compliance considerations for substitute selection?
A: All substitutes are ROHS3 Compliant and REACH Unaffected.

Q: Is there any difference in product status or availability among the substitutes?
A: All listed substitutes are active and available new, original stock per provided inventory data.

Q: How do variations in continuous drain current or Rds(on) affect suitability?
A: Only substitutes with equivalent or superior continuous drain current (Id) and comparable Rds(on) values are listed, strictly adhering to allowed parameters.

Q: Can these substitutes be used in applications with the same environmental temperature range?
A: All parts support -55°C ~ 150°C (TJ) operating range.

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