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APT50M65LFLLG Equivalent & Substitute Parts Reference
Part Overview
The APT50M65LFLLG from Microchip Technology is an N-Channel Power MOSFET in the Transistors, FETs, MOSFETs category. It features a 500 V drain-source voltage rating, a continuous drain current of 67A at 25°C, 65mOhm maximum on-resistance, and is packaged in a TO-264 [L] through-hole case. The product is active and RoHS3 compliant.
Identifying alternative models for the APT50M65LFLLG is necessary to ensure continuity of supply, flexibility in sourcing, and to address situations of stock shortages, manufacturing interruptions, or supply chain constraints while maintaining compliance and fit in the intended design.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 67A (Tc) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 33.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 141 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 7010 pF @ 25 V |
| Power Dissipation (Max) | 694W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-264-3, TO-264AA |
| RoHS Status | ROHS3 Compliant |
| Product Status | Active |
Substitute Part Grouping Explanation
Substitutes are identified only using parameters available in the input data and are restricted to:
- FET Type
- Drain to Source Voltage (Vdss)
- Current - Continuous Drain (Id) @ 25°C
- Rds On (Max) @ Id, Vgs
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Vgs (Max)
- Input Capacitance (Ciss) (Max) @ Vds
- Power Dissipation (Max)
- Operating Temperature
- Mounting Type
- Package / Case
- RoHS Status
- Product Status
Only parts matching or exceeding required voltage, current, and power dissipation ratings, with compatible mounting and RoHS status, are considered substitutes.
Parameter Comparison
| Manufacturer Part Number | Manufacturer | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Operating Temperature | Mounting Type | Package / Case | RoHS Status | Product Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| APT50M65LFLLG | Microchip Technology | N-Channel | 500 V | 67A (Tc) | 65mOhm @ 33.5A, 10V | 5V @ 2.5mA | 141 nC @ 10 V | ±30V | 7010 pF @ 25 V | 694W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | ROHS3 Compliant | Active |
| FDL100N50F | onsemi | N-Channel | 500 V | 100A (Tc) | 55mOhm @ 50A, 10V | 5V @ 250µA | 238 nC @ 10 V | ±30V | 12000 pF @ 25 V | 2500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | ROHS3 Compliant | Active |
| IXFB100N50Q3 | IXYS | N-Channel | 500 V | 100A (Tc) | 49mOhm @ 50A, 10V | 6.5V @ 8mA | 255 nC @ 10 V | ±30V | 13800 pF @ 25 V | 1560W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | ROHS3 Compliant | Active |
| IXFK78N50P3 | IXYS | N-Channel | 500 V | 78A (Tc) | 68mOhm @ 500mA, 10V | 5V @ 4mA | 147 nC @ 10 V | ±30V | 9900 pF @ 25 V | 1130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | ROHS3 Compliant | Active |
| IXFK80N50P | IXYS | N-Channel | 500 V | 80A (Tc) | 65mOhm @ 40A, 10V | 5V @ 8mA | 197 nC @ 10 V | ±30V | 12700 pF @ 25 V | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | ROHS3 Compliant | Active |
| IXFK80N50Q3 | IXYS | N-Channel | 500 V | 80A (Tc) | 65mOhm @ 40A, 10V | 6.5V @ 8mA | 200 nC @ 10 V | ±30V | 10000 pF @ 25 V | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | ROHS3 Compliant | Active |
Engineering Selection Recommendations
All the listed substitute parts are active and ROHS3 compliant or have REACH Unaffected status where supplied, matching the APT50M65LFLLG for regulatory and supply-chain compliance requirements. Package compatibility is maintained with TO-264-3 or TO-264AA across all items.
Frequently Asked Questions (FAQ)
Q1: What are the main parameters for qualifying a substitute for APT50M65LFLLG?
All substitute MOSFETs must match or exceed the Drain-Source Voltage (Vdss), Current - Continuous Drain (Id), Power Dissipation, and be in an equivalent through-hole TO-264 package. Additional parameters such as Rds On, Vgs(th), and input capacitance should also be considered for electrical compatibility.
Q2: Are package and footprint compatible among substitutes?
All substitutes utilize the TO-264 or equivalent package, supporting through-hole mounting, ensuring compatibility with the mechanical footprint of the APT50M65LFLLG.
Q3: Is RoHS3 compliance guaranteed across substitutes?
Each listed substitute is RoHS3 compliant according to the provided data, ensuring suitability for applications requiring lead-free or environmentally restricted components.
Q4: Do all substitutes have an active product status?
Yes, all listed equivalent MOSFETs are currently active according to the provided information.
Q5: Can the input capacitance or gate charge differences affect substitution?
Any effect of gate charge or capacitance is quantifiable based strictly on values given. All presented substitutes list data for these parameters, aiding direct selection based on allowed design limits.
Q6: Are the voltage and current ratings higher or equal on substitutes?
Each substitute matches or exceeds the APT50M65LFLLG in voltage and current rating as documented in the comparison table.
Q7: Is the method of mounting consistent for all listed parts?
All parts specified are through-hole types, matching the APT50M65LFLLG requirement.
Q8: Are all the compared substitute parts in the same product category as APT50M65LFLLG?
All listed parts are in the Transistors, FETs, MOSFETs category.
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