APT50M65LFLLG Equivalent & Substitute Parts Reference

Part Overview

The APT50M65LFLLG from Microchip Technology is an N-Channel Power MOSFET in the Transistors, FETs, MOSFETs category. It features a 500 V drain-source voltage rating, a continuous drain current of 67A at 25°C, 65mOhm maximum on-resistance, and is packaged in a TO-264 [L] through-hole case. The product is active and RoHS3 compliant.

Identifying alternative models for the APT50M65LFLLG is necessary to ensure continuity of supply, flexibility in sourcing, and to address situations of stock shortages, manufacturing interruptions, or supply chain constraints while maintaining compliance and fit in the intended design.

Substiute Parts

APT50M65LFLLG
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Key Parameters

ParameterValue
FET TypeN-Channel
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C67A (Tc)
Rds On (Max) @ Id, Vgs65mOhm @ 33.5A, 10V
Vgs(th) (Max) @ Id5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs141 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds7010 pF @ 25 V
Power Dissipation (Max)694W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-264-3, TO-264AA
RoHS StatusROHS3 Compliant
Product StatusActive

Substitute Part Grouping Explanation

Substitutes are identified only using parameters available in the input data and are restricted to:

  • FET Type
  • Drain to Source Voltage (Vdss)
  • Current - Continuous Drain (Id) @ 25°C
  • Rds On (Max) @ Id, Vgs
  • Vgs(th) (Max) @ Id
  • Gate Charge (Qg) (Max) @ Vgs
  • Vgs (Max)
  • Input Capacitance (Ciss) (Max) @ Vds
  • Power Dissipation (Max)
  • Operating Temperature
  • Mounting Type
  • Package / Case
  • RoHS Status
  • Product Status

Only parts matching or exceeding required voltage, current, and power dissipation ratings, with compatible mounting and RoHS status, are considered substitutes.

Parameter Comparison

Manufacturer Part Number Manufacturer FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Operating Temperature Mounting Type Package / Case RoHS Status Product Status
APT50M65LFLLG Microchip Technology N-Channel 500 V 67A (Tc) 65mOhm @ 33.5A, 10V 5V @ 2.5mA 141 nC @ 10 V ±30V 7010 pF @ 25 V 694W (Tc) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA ROHS3 Compliant Active
FDL100N50F onsemi N-Channel 500 V 100A (Tc) 55mOhm @ 50A, 10V 5V @ 250µA 238 nC @ 10 V ±30V 12000 pF @ 25 V 2500W (Tc) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA ROHS3 Compliant Active
IXFB100N50Q3 IXYS N-Channel 500 V 100A (Tc) 49mOhm @ 50A, 10V 6.5V @ 8mA 255 nC @ 10 V ±30V 13800 pF @ 25 V 1560W (Tc) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA ROHS3 Compliant Active
IXFK78N50P3 IXYS N-Channel 500 V 78A (Tc) 68mOhm @ 500mA, 10V 5V @ 4mA 147 nC @ 10 V ±30V 9900 pF @ 25 V 1130W (Tc) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA ROHS3 Compliant Active
IXFK80N50P IXYS N-Channel 500 V 80A (Tc) 65mOhm @ 40A, 10V 5V @ 8mA 197 nC @ 10 V ±30V 12700 pF @ 25 V 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA ROHS3 Compliant Active
IXFK80N50Q3 IXYS N-Channel 500 V 80A (Tc) 65mOhm @ 40A, 10V 6.5V @ 8mA 200 nC @ 10 V ±30V 10000 pF @ 25 V 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA ROHS3 Compliant Active

Engineering Selection Recommendations

All the listed substitute parts are active and ROHS3 compliant or have REACH Unaffected status where supplied, matching the APT50M65LFLLG for regulatory and supply-chain compliance requirements. Package compatibility is maintained with TO-264-3 or TO-264AA across all items.

Frequently Asked Questions (FAQ)

Q1: What are the main parameters for qualifying a substitute for APT50M65LFLLG?
All substitute MOSFETs must match or exceed the Drain-Source Voltage (Vdss), Current - Continuous Drain (Id), Power Dissipation, and be in an equivalent through-hole TO-264 package. Additional parameters such as Rds On, Vgs(th), and input capacitance should also be considered for electrical compatibility.

Q2: Are package and footprint compatible among substitutes?
All substitutes utilize the TO-264 or equivalent package, supporting through-hole mounting, ensuring compatibility with the mechanical footprint of the APT50M65LFLLG.

Q3: Is RoHS3 compliance guaranteed across substitutes?
Each listed substitute is RoHS3 compliant according to the provided data, ensuring suitability for applications requiring lead-free or environmentally restricted components.

Q4: Do all substitutes have an active product status?
Yes, all listed equivalent MOSFETs are currently active according to the provided information.

Q5: Can the input capacitance or gate charge differences affect substitution?
Any effect of gate charge or capacitance is quantifiable based strictly on values given. All presented substitutes list data for these parameters, aiding direct selection based on allowed design limits.

Q6: Are the voltage and current ratings higher or equal on substitutes?
Each substitute matches or exceeds the APT50M65LFLLG in voltage and current rating as documented in the comparison table.

Q7: Is the method of mounting consistent for all listed parts?
All parts specified are through-hole types, matching the APT50M65LFLLG requirement.

Q8: Are all the compared substitute parts in the same product category as APT50M65LFLLG?
All listed parts are in the Transistors, FETs, MOSFETs category.

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