Equivalent & Substitute Parts for Microchip APT50M50L2LLG

Part Overview

The Microchip Technology APT50M50L2LLG is an N-Channel MOSFET in the POWER MOS 7® series, featuring a Drain to Source Voltage (Vdss) of 500 V and a continuous drain current (Id) of 89A (Tc). The device is specified for through hole mounting and is packaged in the TO-264-3, TO-264AA case. The product status is “Active,” and it is RoHS3 compliant with unlimited moisture sensitivity (MSL 1). Alternative and substitute models are required for scenarios involving inventory constraints, cost optimization, or mechanical interchangeability within the same application space.

Key Parameters

Parameter	Value
Manufacturer Part Number	APT50M50L2LLG
Manufacturer	Microchip Technology
Category	Transistors, FETs, MOSFETs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	89A (Tc)
Rds On (Max) @ Id, Vgs	50mOhm @ 44.5A, 10V
Vgs(th) (Max) @ Id	5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs	200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	10550 pF @ 25 V
Mounting Type	Through Hole
Supplier Device Package	264 MAX™ [L2]
Package / Case	TO-264-3, TO-264AA
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected

Substitute Part Grouping Explanation

Substitute parts are selected strictly based on parameters specified in the input for high-power, N-Channel MOSFETs suitable for through hole mounting in TO-264-3, TO-264AA packages. Qualification is based on the following key parameters:

Device category: Transistors, FETs, MOSFETs
FET type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Continuous Drain Current (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
RoHS/REACH/Compliance: Explicitly listed

Parameter Comparison

Parameter	APT50M50L2LLG	IXFB100N50Q3	IXFK78N50P3	IXFK80N50P	IXFK80N50Q3
Manufacturer	Microchip Technology	IXYS	IXYS	IXYS	IXYS
Category	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V	500 V	500 V	500 V	500 V
Current - Continuous Drain (Id) @ 25°C	89A (Tc)	100A (Tc)	78A (Tc)	80A (Tc)	80A (Tc)
Rds On (Max) @ Id, Vgs	50mOhm @ 44.5A, 10V	49mOhm @ 50A, 10V	68mOhm @ 500mA, 10V	65mOhm @ 40A, 10V	65mOhm @ 40A, 10V
Vgs(th) (Max) @ Id	5V @ 5mA	6.5V @ 8mA	5V @ 4mA	5V @ 8mA	6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs	200 nC @ 10 V	255 nC @ 10 V	147 nC @ 10 V	197 nC @ 10 V	200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	10550 pF @ 25 V	13800 pF @ 25 V	9900 pF @ 25 V	12700 pF @ 25 V	10000 pF @ 25 V
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-264-3, TO-264AA	TO-264-3, TO-264AA	TO-264-3, TO-264AA	TO-264-3, TO-264AA	TO-264-3, TO-264AA
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

All substitute MOSFETs are classified as “Active,” conform to ROHS3 requirements, exhibit unlimited moisture sensitivity levels (MSL 1), and are REACH unaffected. All alternatives are available in through-hole, TO-264-3, TO-264AA packages and belong to the N-Channel MOSFET category. Each substitute meets the provided compliance and regulatory requirements.

Frequently Asked Questions (FAQ)

Q1: Which key parameters must match for substituting a MOSFET in this category?
A1: Substitution requires matching FET type (N-Channel), technology (MOSFET Metal Oxide), drain to source voltage (500 V), continuous drain current rating, package/case (TO-264-3, TO-264AA), mounting type (through hole), and regulatory compliance information.

Q2: Are substitute models required to be ROHS3 compliant and REACH unaffected?
A2: Yes. All substitutes must have equal compliance status for RoHS3 and REACH to ensure regulatory compatibility.

Q3: Is the TO-264-3, TO-264AA package essential for substitution?
A3: Yes. The package determines mechanical fit and interchangeability in existing layouts. Only substitutes in TO-264-3, TO-264AA packages are listed.

Q4: Can substitutes with differing continuous drain current (Id) be used?
A4: Substitutes must have a continuous drain current specified close to, or exceeding, the original device to maintain functional compatibility within the intended design parameters.

Q5: How is Rds On (Max) @ Id, Vgs factored into selection?
A5: Only MOSFETs with clearly defined maximum Rds On values comparable to the main part are listed, as this parameter impacts conduction losses and device efficiency.

Q6: Is mounting type considered for substitution?
A6: Yes, only through hole mounting types matching the original are included, ensuring direct replacement capability on the same PCB footprint.

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