Equivalent & Substitute Parts for Microchip Technology APT50M50JLL

Part Overview

The Microchip Technology APT50M50JLL is an N-Channel Power MOSFET designed for high-voltage and high-current applications. It features a Drain to Source Voltage of 500 V and a continuous drain current of 71A (Tc), utilizing ISOTOP® chassis mount packaging. The component is part of the POWER MOS 7® series, actively produced and RoHS3 compliant. Substitutes for the APT50M50JLL may be required for scenarios including supply chain variability, inventory constraints, or compatibility requirements within standard transistor, FET, and MOSFET applications.

Substiute Parts

APT50M50JLL
Microchip TechnologyIn Stock: 1188APT50M50JLL Datasheet
APT50M50JLL
Current Part
IXFN100N50P
IXYSIn Stock: 3149IXFN100N50P Datasheet
IXFN100N50P
Similar
IXFN100N50Q3
IXYSIn Stock: 68755IXFN100N50Q3 Datasheet
IXFN100N50Q3
Similar

Key Parameters

Parameter Main Part (APT50M50JLL)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 50mOhm @ 35.5A, 10V
Vgs(th) (Max) @ Id 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 10550 pF @ 25 V
Power Dissipation (Max) 595W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
Product Status Active

Substitute Part Grouping Explanation

Substitute parts are selected strictly on a match of critical electrical and mechanical parameters, ensuring compatibility within the same transistor, FET, and MOSFET category. The following criteria determine substitution:

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Continuous Drain Current (Id) @ 25°C: At least 71A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: Close match
  • Vgs(th) (Max) @ Id: Comparable
  • Gate Charge (Qg) (Max) @ Vgs: Similar range
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: Comparable
  • Power Dissipation (Max): Equal or greater
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC or equivalents
  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • REACH Status: REACH Unaffected
  • Product Status: Active

Only components meeting all these specified parameters qualify as substitutes for the APT50M50JLL in engineering applications.

Parameter Comparison

Parameter APT50M50JLL (Microchip Technology) IXFN100N50P (IXYS) IXFN100N50Q3 (IXYS)
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 71A (Tc) 90A (Tc) 82A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 50mOhm @ 35.5A, 10V 49mOhm @ 50A, 10V 49mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 5V @ 5mA 5V @ 8mA 6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V 240 nC @ 10 V 255 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 10550 pF @ 25 V 20000 pF @ 25 V 13800 pF @ 25 V
Power Dissipation (Max) 595W (Tc) 1040W (Tc) 960W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Chassis Mount Chassis Mount
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected
Product Status Active Active Active

Engineering Selection Recommendations

All listed substitute parts—IXFN100N50P and IXFN100N50Q3—possess active product status, ROHS3 compliance, and REACH unaffected status, as required for direct replacement of APT50M50JLL. Each substitute features MSL 1 (Unlimited), ensuring equivalence in handling and storage. Selection should be based on matching electrical ratings, compliance certifications, and mechanical compatibility as specified above.

Frequently Asked Questions (FAQ)

Q1: What electrical parameters are critical for substituting APT50M50JLL?
A1: Substitution requires matching FET type, technology, Drain to Source Voltage (Vdss), continuous drain current (Id), gate voltage specifications, Rds On, gate charge (Qg), input capacitance (Ciss), power dissipation, and operating temperature.

Q2: Are package compatibility and mounting type relevant for substitutes?
A2: Yes, all substitutes must feature identical package/case and mounting type—SOT-227-4, miniBLOC chassis mount—to ensure mechanical compatibility.

Q3: What compliance certifications must substitutes have?
A3: Substitute parts must be ROHS3 compliant, REACH unaffected, and possess MSL 1 (Unlimited) to match handling, safety, and regulatory requirements.

Q4: Can substitutes exceed the main part’s specifications?
A4: All substitutes match or exceed the original part’s electrical, thermal, and mechanical specifications as provided. Only parameters given are considered.

Q5: Why is product status important in part selection?
A5: Only active parts are suitable as substitutes, ensuring availability and support for engineering applications.

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