Equivalent & Substitute Parts Reference for APT5024BLLG

Part Overview

The Microchip Technology APT5024BLLG is an N-channel MOSFET categorized under Transistors, FETs, MOSFETs. It provides a drain-to-source voltage of 500 V, a continuous drain current of 22A at 25°C (Tc), and 265W power dissipation. The component features a TO-247 [B] through-hole package and is part of the POWER MOS 7® Series. The product is currently active, ROHS3 compliant, REACH unaffected, and available in significant inventory. Sourcing substitute parts is necessary for scenarios involving cross-manufacturer sourcing, supply chain optimization, or maintenance of design flexibility for applications requiring comparable voltage, current, dissipation, packaging, and compliance levels.

Key Parameters

Parameter	Value
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	240mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	43 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1900 pF @ 25 V
Power Dissipation (Max)	265W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
RoHS Status	ROHS3 Compliant
REACH Status	REACH Unaffected
Product Status	Active

Substitute Part Grouping Explanation

Substitute parts for APT5024BLLG in the Transistors, FETs, MOSFETs category are selected strictly based on the following parameters: FET type (N-Channel), device technology (MOSFET Metal Oxide), drain-source voltage rating (500 V), continuous drain current (Id), maximum power dissipation, gate-source maximum voltage (Vgs Max), Rds(on), package compatibility (TO-247-3), mounting type (Through Hole), and compliance (ROHS3, REACH). Only parts matching these critical parameters are considered valid substitutes. No additional attributes, operational suggestions, or unlisted specifications are taken into account.

Parameter Comparison

Parameter	APT5024BLLG (Microchip)	IRFP460APBF (Vishay)	IRFP22N50APBF (Vishay)	IXFJ26N50P3 (IXYS)	IXTH16N50D2 (IXYS)	IXTH22N50P (IXYS)
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V	500 V	500 V	500 V	500 V	500 V
Current - Continuous Drain (Id) @ 25°C	22A	20A	22A	14A	16A	22A
Drive Voltage (Max Rds On, Min Rds On)	10V	10V	10V	10V	0V	10V
Rds On (Max) @ Id, Vgs	240mOhm @ 11A, 10V	270mOhm @ 12A, 10V	230mOhm @ 13A, 10V	265mOhm @ 13A, 10V	240mOhm @ 8A, 0V	270mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA	4V @ 250µA	4V @ 250µA	5V @ 4mA	-	5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	43 nC @ 10 V	105 nC @ 10 V	120 nC @ 10 V	42 nC @ 10 V	199 nC @ 5 V	50 nC @ 10 V
Vgs (Max)	±30V	±30V	±30V	±30V	±20V	±30V
Input Capacitance (Ciss) (Max) @ Vds	1900 pF @ 25 V	3100 pF @ 25 V	3450 pF @ 25 V	2220 pF @ 25 V	5250 pF @ 25 V	2630 pF @ 25 V
Power Dissipation (Max)	265W (Tc)	280W (Tc)	277W (Tc)	180W (Tc)	695W (Tc)	350W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected
Product Status	Active	Active	Active	Active	Active	Active

Engineering Selection Recommendations

All listed substitute parts in this MOSFET category maintain active status, ROHS3 compliance, and are unaffected by REACH, fulfilling baseline substitution criteria. Mechanical and electrical parameters including drain-to-source voltage, package type, mounting method, and operating temperature are within the parameters for allowed substitution. ECCN codes and HTSUS codes align, supporting compatibility in regulated environments. Selection should be made according to the explicitly stated parameters, compliance certifications, and product status.

Frequently Asked Questions (FAQ)

Q1: What electrical parameters must match when substituting N-Channel MOSFETs like APT5024BLLG?
A1: Key electrical substitution parameters include FET type, MOSFET technology, drain-source voltage (Vdss), continuous drain current (Id), Rds(on), gate-source voltage (Vgs), gate charge (Qg), input capacitance (Ciss), and power dissipation.

Q2: Are package and mounting types critical for MOSFET substitution?
A2: Yes. The substitute part must have the same package/case (TO-247-3) and mounting type (Through Hole) as the original, ensuring mechanical compatibility in the application.

Q3: What compliance certifications must substitutes meet?
A3: Substitute MOSFETs must be ROHS3 compliant and REACH unaffected to meet environmental and regulatory requirements. Product status should be "Active" for availability and supply assurance.

Q4: Is it acceptable to select substitutes with different gate charge or input capacitance values?
A4: Allowed substitutions are based solely on provided parameters. Variations within the specified electrical and mechanical fields are permitted, provided all listed parameters are consistent with substitution criteria.

Q5: How is continuous drain current (Id) considered in substitution?
A5: Substitute MOSFETs must provide continuous drain current values consistent with the application's requirements, matching or exceeding the original part's specification as provided.

Q6: Are there substitute parts that offer higher or lower power dissipation?
A6: Yes. Substitutes may have differing power dissipation values as listed, as long as all other critical electrical and mechanical parameters required for substitution are satisfied.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message