APT5017SVRG N-Channel 500V 30A MOSFET Equivalent & Substitute Parts

Part Overview

The APT5017SVRG is an N-Channel 500V 30A surface mount MOSFET manufactured by Microchip Technology in the POWER MOS V® series. This device is classified as Active product status and is designed for high-voltage switching applications requiring 500V drain-to-source voltage capability with 30A continuous drain current at 25°C. The part is packaged in D3PAK (TO-268-3) surface mount configuration. Equivalent and substitute parts are identified based on matching or exceeding the core electrical specifications and maintaining compatible packaging standards for direct circuit board replacement.

Substiute Parts

APT5017SVRG

Microchip TechnologyIn Stock: 907APT5017SVRG Datasheet

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IXFT30N50Q3

IXYSIn Stock: 868IXFT30N50Q3 Datasheet

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IXTT30N50L2

IXYSIn Stock: 1203IXTT30N50L2 Datasheet

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IXTT36N50P

IXYSIn Stock: 980IXTT36N50P Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the APT5017SVRG are qualified based on the following core electrical and mechanical parameters:

Primary Matching Criteria:

• Drain to Source Voltage (Vdss): 500V (exact match required)
• FET Type: N-Channel (exact match required)
• Mounting Type: Surface Mount (exact match required)
• Package / Case: TO-268-3, D³Pak, TO-268AA (exact match required)
• Continuous Drain Current (Id) @ 25°C: 30A or greater
• Technology: MOSFET (Metal Oxide) (exact match required)

Secondary Compatibility Parameters:

• Rds On (Max) @ Id, Vgs: Equal to or lower than 200mOhm
• Vgs(th) (Max) @ Id: Within ±2V of main part specification
• Gate Charge (Qg) (Max) @ Vgs: Acceptable range for switching applications
• Input Capacitance (Ciss) (Max) @ Vds: Acceptable for circuit design

All substitute parts listed maintain Active product status, ROHS3 compliance, and MSL 1 rating, ensuring regulatory and environmental compatibility with the original APT5017SVRG.

Parameter Comparison

Engineering Selection Recommendations

IXFT30N50Q3 (IXYS HiPerFET™ Q3 Class)

This substitute maintains 500V Vdss and 30A continuous drain current specifications. The IXFT30N50Q3 features lower gate charge (62 nC) and reduced input capacitance (3200 pF) compared to the APT5017SVRG, resulting in faster switching characteristics. Rds On specification is 200mOhm at 15A, 10V, which is acceptable for equivalent applications. Product status is Active with ROHS3 compliance and MSL 1 rating. This part is suitable for applications where reduced switching losses are beneficial.

IXTT30N50L2 (IXYS Linear L2™)

This substitute maintains 500V Vdss and 30A continuous drain current specifications. The IXTT30N50L2 features gate charge of 240 nC and input capacitance of 8100 pF, providing characteristics closer to the original APT5017SVRG. Rds On specification is 200mOhm at 15A, 10V. Product status is Active with ROHS3 compliance and MSL 1 rating. This part is suitable for applications requiring linear switching characteristics.

IXTT36N50P (IXYS Polar)

This substitute exceeds the continuous drain current specification at 36A (Tc) while maintaining 500V Vdss. The IXTT36N50P features Rds On of 170mOhm at 500mA, 10V, matching the original APT5017SVRG specification. Gate charge is 85 nC and input capacitance is 5500 pF. Product status is Active with ROHS3 compliance and MSL 1 rating. This part provides higher current capability for applications requiring increased thermal headroom or higher current margins.

All substitute parts are packaged in TO-268-3 D³Pak surface mount configuration, enabling direct circuit board replacement without layout modifications.

Frequently Asked Questions (FAQ)

Q: Can the IXFT30N50Q3 be used as a direct replacement for the APT5017SVRG?

A: The IXFT30N50Q3 is electrically compatible as a substitute. Both devices share 500V Vdss, 30A continuous drain current, and identical TO-268-3 D³Pak packaging. The IXFT30N50Q3 exhibits lower gate charge and input capacitance, which may improve switching performance in certain circuit topologies. Verification of gate drive circuit compatibility is necessary due to the higher Vgs(th) specification (6.5V vs. 4V).

Q: What are the key differences between the three substitute parts?

A: The IXFT30N50Q3 offers the lowest gate charge (62 nC) and input capacitance (3200 pF), optimizing for fast switching applications. The IXTT30N50L2 provides intermediate characteristics with 240 nC gate charge and 8100 pF input capacitance, suitable for linear switching. The IXTT36N50P delivers higher current capability (36A) with gate charge of 85 nC and Rds On matching the original part at 170mOhm.

Q: Are all substitute parts RoHS compliant?

A: All substitute parts listed are ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity level, matching the environmental and regulatory status of the APT5017SVRG.

Q: Can the IXTT36N50P be used in applications designed for 30A operation?

A: The IXTT36N50P is rated for 36A continuous drain current and is electrically compatible with circuits designed for 30A operation. The higher current rating provides additional thermal margin and operational headroom. No circuit modifications are required for direct substitution.

Q: What packaging considerations apply to these substitute parts?

A: All substitute parts use TO-268-3 D³Pak (2 Leads + Tab) surface mount packaging, identical to the APT5017SVRG. Direct circuit board replacement is possible without PCB layout modifications. Thermal management characteristics may vary due to differences in power dissipation ratings; thermal interface design should be verified for high-power applications.

Q: How do gate charge differences affect circuit design?

A: Gate charge variations (62 nC to 300 nC) impact gate drive circuit requirements and switching speed. Lower gate charge (IXFT30N50Q3 at 62 nC) enables faster switching with reduced gate drive power. Higher gate charge (APT5017SVRG at 300 nC) requires more robust gate drive capability. Gate drive circuit compatibility must be confirmed before substitution.