APT5016BLLG N-Channel 500V 30A MOSFET Equivalent & Substitute Parts

Part Overview

The APT5016BLLG is an N-Channel 500V 30A power MOSFET manufactured by Microchip Technology in the POWER MOS 7® series. This device is housed in a TO-247 [B] through-hole package and is rated for continuous drain current of 30A at 25°C with a maximum power dissipation of 329W. The part is currently in Active product status with 714 units in stock.

Equivalent and substitute parts are identified based on matching electrical characteristics including drain-source voltage (Vdss), continuous drain current (Id), gate charge (Qg), on-state resistance (Rds On), and compatible through-hole packaging. Substitutes enable design flexibility, address supply chain availability, and provide alternative sourcing options while maintaining circuit performance within specified operating parameters.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	30	A (Tc)
On-State Resistance (Rds On) @ 15A, 10V	160	mOhm
Gate Charge (Qg) @ 10V	72	nC
Gate Threshold Voltage (Vgs(th)) @ 1mA	5	V
Maximum Gate Voltage (Vgs)	±30	V
Input Capacitance (Ciss) @ 25V	2833	pF
Power Dissipation (Max)	329	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-247-3	Through Hole
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level	1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the APT5016BLLG are selected based on the following critical electrical and mechanical parameters:

Primary Matching Criteria:

Drain-Source Voltage (Vdss): 500V (exact match required)
Continuous Drain Current (Id): 30A or higher
Package Type: TO-247 or TO-247 variant (through-hole compatible)
FET Type: N-Channel MOSFET
Technology: Metal Oxide Semiconductor
Operating Temperature Range: -55°C to 150°C minimum
RoHS3 Compliance: Required

Secondary Compatibility Parameters:

On-State Resistance (Rds On): 160mOhm or lower (lower values indicate improved performance)
Gate Charge (Qg): 72nC or lower (lower values reduce switching losses)
Gate Threshold Voltage (Vgs(th)): 5V to 6.5V range (compatible gate drive requirements)
Maximum Gate Voltage (Vgs): ±20V or ±30V (±30V preferred for design margin)
Input Capacitance (Ciss): Comparable to 2833pF (affects gate drive circuit design)

All substitute parts listed maintain the 500V Vdss rating and support continuous drain currents at or above 30A. Package variants within the TO-247 family (TO-247 [B], TO-247AC, TO-247AD, ISOPLUS247™, PLUS247™-3) are mechanically compatible with standard TO-247 footprints. All listed substitutes are RoHS3 compliant with MSL rating of 1 (Unlimited).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Vgs(th) (V)	Vgs Max (V)	Ciss (pF)	Pd Max (W)	Package	Status
APT5016BLLG	Microchip	500	30	160 @ 15A	72 @ 10V	5 @ 1mA	±30	2833 @ 25V	329	TO-247 [B]	Active
IRFP32N50KPBF	Vishay Siliconix	500	32	160 @ 32A	190 @ 10V	5 @ 250µA	±30	5280 @ 25V	460	TO-247AC	Active
IXFH30N50Q3	IXYS	500	30	200 @ 15A	62 @ 10V	6.5 @ 4mA	±20	3200 @ 25V	690	TO-247AD	Active
IXFH34N50P3	IXYS	500	34	170 @ 17A	60 @ 10V	5 @ 4mA	±30	3260 @ 25V	695	TO-247AD	Active
IXFH36N50P	IXYS	500	36	170 @ 500mA	93 @ 10V	5 @ 4mA	±30	5500 @ 25V	540	TO-247AD	Active
IXFH42N50P2	IXYS	500	42	145 @ 500mA	92 @ 10V	4.5 @ 4mA	±30	5300 @ 25V	830	TO-247AD	Last Time Buy
IXFR44N50Q3	IXYS	500	25	154 @ 22A	93 @ 10V	6.5 @ 4mA	±30	4800 @ 25V	300	ISOPLUS247™	Active
IXTH30N50P	IXYS	500	30	200 @ 15A	70 @ 10V	5 @ 250µA	±30	4150 @ 25V	460	TO-247	Active
IXTX46N50L	IXYS	500	46	160 @ 500mA	260 @ 15V	6 @ 250µA	±30	7000 @ 25V	700	PLUS247™-3	Active

Engineering Selection Recommendations

Direct Equivalents (Recommended for Drop-In Replacement):

IXTH30N50P and IXFH30N50Q3 are the closest functional equivalents to the APT5016BLLG. Both devices maintain the 500V Vdss rating and 30A continuous drain current specification. IXTH30N50P uses standard TO-247 packaging identical to the APT5016BLLG footprint. Both parts are Active status with RoHS3 compliance and MSL 1 rating. IXTH30N50P exhibits slightly higher Rds On (200mOhm vs. 160mOhm) and gate charge (70nC vs. 72nC), representing negligible performance variance. IXFH30N50Q3 offers lower gate charge (62nC) but operates with ±20V maximum gate voltage versus the ±30V specification of the APT5016BLLG.

Higher Current Alternatives (For Increased Current Margin):

IXFH34N50P3, IXFH36N50P, and IRFP32N50KPBF provide continuous drain currents of 34A, 36A, and 32A respectively, offering design margin above the 30A requirement. IXFH34N50P3 and IXFH36N50P maintain ±30V gate voltage rating and are Active status. IRFP32N50KPBF (Vishay Siliconix) is Active status with 32A rating and identical 160mOhm Rds On specification. All three parts are RoHS3 compliant with MSL 1 rating.

High-Performance Alternative:

IXFH42N50P2 provides the lowest on-state resistance (145mOhm) among substitutes, reducing conduction losses. This part carries Last Time Buy status, indicating limited future availability. The 42A continuous drain current provides substantial design margin. RoHS3 compliance and MSL 1 rating are maintained.

Lower Current Alternative:

IXFR44N50Q3 operates at 25A continuous drain current, below the 30A specification of the APT5016BLLG. This part uses ISOPLUS247™ packaging, a TO-247 variant. Selection of this part requires verification that circuit design does not exceed 25A continuous operation. Active status with RoHS3 compliance and MSL 1 rating are confirmed.

High Current, Specialized Package:

IXTX46N50L provides 46A continuous drain current in PLUS247™-3 packaging. This variant package requires footprint verification for mechanical compatibility. Gate charge is elevated at 260nC (measured at 15V), indicating higher switching losses. Active status with RoHS3 compliance and MSL 1 rating are maintained.

All recommended substitutes maintain the -55°C to 150°C operating temperature range and are RoHS3 compliant with unlimited moisture sensitivity level (MSL 1).

Frequently Asked Questions (FAQ)

Q: Can IXFR44N50Q3 be used as a direct substitute for APT5016BLLG?

A: IXFR44N50Q3 is electrically compatible at 500V Vdss and shares the same gate threshold voltage range. However, the continuous drain current rating is 25A, which is below the 30A specification of the APT5016BLLG. This part is suitable only if circuit design ensures continuous drain current does not exceed 25A. ISOPLUS247™ packaging is mechanically compatible with standard TO-247 footprints.

Q: What is the difference between TO-247 [B], TO-247AC, and TO-247AD packages?

A: All three are TO-247 family variants with identical pin configurations and mechanical footprints suitable for standard TO-247 PCB layouts. TO-247 [B] is the Microchip designation, TO-247AC is the Vishay designation, and TO-247AD is the IXYS designation. These variants are mechanically interchangeable on standard TO-247 footprints. ISOPLUS247™ and PLUS247™-3 are specialized variants requiring footprint verification.

Q: Why does IXFH42N50P2 show Last Time Buy status?

A: Last Time Buy status indicates the manufacturer has announced end-of-life for this product. While currently available with 5580 units in stock, future availability is not guaranteed. For new designs, Active status parts such as IXFH34N50P3, IXFH36N50P, or IXTH30N50P are recommended for long-term supply assurance.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the total charge required to switch the MOSFET from off to on state. Lower gate charge reduces switching losses and allows faster switching speeds with lower gate drive current requirements. APT5016BLLG specifies 72nC at 10V. IXFH30N50Q3 offers lower gate charge at 62nC, while IXFH36N50P and IXFH42N50P2 specify 93nC and 92nC respectively. Gate drive circuit design must accommodate the specified gate charge of the selected part.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed in this reference maintain RoHS3 compliance and MSL 1 (Unlimited) moisture sensitivity level, matching the environmental and regulatory status of the APT5016BLLG.

Q: What is the significance of Rds On (on-state resistance) differences?

A: On-state resistance directly affects conduction losses and heat dissipation. Lower Rds On values reduce power loss during conduction. APT5016BLLG specifies 160mOhm at 15A and 10V. IXFH42N50P2 offers the lowest Rds On at 145mOhm, while IXFH30N50Q3 and IXTH30N50P specify 200mOhm. For high-current applications, lower Rds On values reduce thermal management requirements.

Q: Can IXTX46N50L be used in applications requiring 30A continuous current?

A: Yes. IXTX46N50L is rated for 46A continuous drain current, providing substantial margin above 30A. However, PLUS247™-3 packaging requires verification of mechanical compatibility with the PCB footprint. The elevated gate charge (260nC at 15V) may require gate drive circuit adjustment compared to the APT5016BLLG (72nC at 10V).

Q: What is the maximum gate voltage rating, and why does it matter?

A: Maximum gate voltage (Vgs Max) specifies the safe operating range for gate-source voltage. APT5016BLLG and most substitutes specify ±30V. IXFH30N50Q3 specifies ±20V, requiring gate drive circuits to limit voltage to this lower threshold. Exceeding maximum gate voltage can cause gate oxide damage and device failure.

Q: Are there any REACH compliance differences among substitute parts?

A: APT5016BLLG and most IXYS substitutes show REACH Unaffected status. IRFP32N50KPBF (Vishay Siliconix) shows REACH Affected status, indicating potential substance of concern declarations. For applications with strict REACH compliance requirements, IXYS parts with REACH Unaffected status are preferred.

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