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APT5014BFLLG Equivalent & Substitute Parts
Part Overview
The APT5014BFLLG is an N-Channel 500V 35A MOSFET manufactured by Microchip Technology in the POWER MOS 7® series. This through-hole TO-247 device is designed for high-voltage switching applications requiring continuous drain current capability at elevated temperatures. The part is currently in active production status with 2300 units in stock inventory.
Substitute parts are necessary when the original APT5014BFLLG becomes unavailable, when alternative sourcing is required for supply chain optimization, or when design flexibility permits selection from qualified equivalent devices that meet the same electrical and mechanical specifications.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | N-Channel | — |
| Drain to Source Voltage (Vdss) | 500 | V |
| Continuous Drain Current (Id) @ 25°C | 35 | A |
| On-State Resistance (Rds On Max) | 140 | mOhm |
| Gate Threshold Voltage (Vgs(th) Max) | 5 | V |
| Gate Charge (Qg Max) | 72 | nC |
| Input Capacitance (Ciss Max) | 3261 | pF |
| Mounting Type | Through Hole | — |
| Package / Case | TO-247-3 | — |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitution of the APT5014BFLLG is determined by strict equivalence across the following critical parameters:
Mandatory Equivalence Criteria:
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 500V
- Package / Case: TO-247-3
- Mounting Type: Through Hole
- RoHS Status: ROHS3 Compliant
Performance Compatibility Criteria:
- Continuous Drain Current (Id) @ 25°C: Equal to or greater than 35A
- On-State Resistance (Rds On Max): Equal to or less than 140 mOhm
- Gate Threshold Voltage (Vgs(th) Max): Within specified range
- Gate Charge (Qg Max): Acceptable for switching frequency requirements
- Input Capacitance (Ciss Max): Acceptable for gate drive circuit design
All substitute parts listed meet the mandatory equivalence criteria and maintain electrical performance within acceptable operating parameters for direct replacement applications.
Parameter Comparison
| Parameter | APT5014BFLLG (Main) | IXFR44N50Q3 | IXFH40N50Q | IXFH50N50P3 | IXFH52N50P2 |
|---|---|---|---|---|---|
| Manufacturer | Microchip Technology | IXYS | IXYS | IXYS | IXYS |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Vdss | 500V | 500V | 500V | 500V | 500V |
| Id @ 25°C (Tc) | 35A | 25A | 40A | 50A | 52A |
| Rds On (Max) @ Id, Vgs | 140 mOhm @ 17.5A, 10V | 154 mOhm @ 22A, 10V | 140 mOhm @ 500mA, 10V | 120 mOhm @ 25A, 10V | 120 mOhm @ 26A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 1mA | 6.5V @ 4mA | 4.5V @ 4mA | 5V @ 4mA | 4.5V @ 4mA |
| Qg (Max) @ Vgs | 72 nC @ 10V | 93 nC @ 10V | 130 nC @ 10V | 85 nC @ 10V | 113 nC @ 10V |
| Ciss (Max) @ Vds | 3261 pF @ 25V | 4800 pF @ 25V | 3800 pF @ 25V | 4335 pF @ 25V | 6800 pF @ 25V |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| Product Status | Active | Active | Active | Active | Active |
| Inventory (Pcs) | 2300 | 1047 | 933 | 19877 | 688200 |
Engineering Selection Recommendations
All listed substitute parts are active production devices with ROHS3 compliance and REACH unaffected status, meeting regulatory requirements equivalent to the APT5014BFLLG.
IXFH50N50P3 provides the highest inventory availability (19,877 units) with improved electrical performance characteristics. The 50A continuous drain current rating exceeds the 35A requirement, and the 120 mOhm on-state resistance matches the APT5014BFLLG specification. This part is suitable for applications where higher current capacity and lower conduction losses are beneficial.
IXFH52N50P2 offers the largest inventory stock (688,200 units) with 52A continuous drain current and 120 mOhm on-state resistance. The higher input capacitance (6800 pF) requires gate drive circuit evaluation but provides superior current handling capability.
IXFH40N50Q maintains 140 mOhm on-state resistance matching the APT5014BFLLG specification with 40A continuous drain current. This part provides direct electrical equivalence with moderate inventory availability (933 units).
IXFR44N50Q3 operates in the ISOPLUS247™ package variant with 25A continuous drain current. This part is suitable only for applications where the 35A current requirement can be reduced or where the lower current rating is acceptable for the specific circuit design.
Frequently Asked Questions (FAQ)
Q: Can IXFH50N50P3 directly replace APT5014BFLLG in existing circuit designs?
A: Yes. Both devices share identical Vdss (500V), package (TO-247-3), and mounting type (through hole). The IXFH50N50P3 provides 50A continuous drain current versus the APT5014BFLLG's 35A, and both specify 120 mOhm on-state resistance at comparable test conditions. The higher current rating does not prevent direct substitution in circuits designed for 35A operation.
Q: What is the significance of the on-state resistance (Rds On) specification?
A: On-state resistance directly determines conduction losses and heat dissipation during normal operation. The APT5014BFLLG specifies 140 mOhm maximum at 17.5A and 10V gate voltage. Substitute parts with equal or lower Rds On values maintain or improve thermal performance. IXFH50N50P3 and IXFH52N50P2 both specify 120 mOhm, reducing power dissipation compared to the original part.
Q: Are all substitute parts available in the same TO-247-3 package?
A: Yes. All listed substitute parts use TO-247-3 package configuration, ensuring mechanical and thermal interface compatibility with existing PCB layouts and heatsink assemblies. IXFR44N50Q3 uses the ISOPLUS247™ variant, which maintains TO-247-3 pin compatibility.
Q: How does gate charge (Qg) affect circuit performance?
A: Gate charge determines the energy required to switch the MOSFET on and off. The APT5014BFLLG specifies 72 nC at 10V. Substitute parts with higher gate charge values (IXFH40N50Q at 130 nC, IXFH52N50P2 at 113 nC) require proportionally more gate drive current but do not prevent substitution. Gate drive circuit design must accommodate the specified gate charge value.
Q: What does ROHS3 compliance indicate?
A: ROHS3 compliance certifies that the device meets Restriction of Hazardous Substances Directive requirements, restricting lead, cadmium, mercury, and other hazardous materials. All listed substitute parts maintain ROHS3 compliance, ensuring regulatory equivalence with the APT5014BFLLG.
Q: Can IXFR44N50Q3 be used in applications requiring 35A continuous current?
A: No. IXFR44N50Q3 specifies 25A continuous drain current, which is below the 35A requirement of the APT5014BFLLG. This part is suitable only for circuit designs where the current requirement does not exceed 25A.
Q: How do input capacitance differences affect gate drive design?
A: Input capacitance (Ciss) affects the gate drive circuit's switching speed and power requirements. The APT5014BFLLG specifies 3261 pF at 25V. Substitute parts with higher Ciss values (IXFH52N50P2 at 6800 pF) require higher gate drive current to achieve equivalent switching speeds. Circuit evaluation is necessary to confirm gate drive capability.
Q: Are all substitute parts in active production status?
A: Yes. All listed substitute parts maintain active production status, ensuring long-term availability and supply chain stability equivalent to the APT5014BFLLG.
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