Equivalent & Substitute Parts Reference: APT5010LVRG

Part Overview

The APT5010LVRG by Microchip Technology is an N-Channel Power MOSFET, designed for high-voltage, high-current switching applications within the Transistors, FETs, MOSFETs category. With an active product status and compliance with relevant standards (ROHS3, REACH), this device is available in TO-264 [L] through-hole packaging. When sourcing, identifying equivalent or substitute parts is necessary for supply chain continuity, multi-source qualification, or component standardization, strictly within the electrical and mechanical constraints provided.

Substiute Parts

APT5010LVRG
Microchip TechnologyIn Stock: 1358APT5010LVRG Datasheet
APT5010LVRG
Current Part
IXTK60N50L2
IXYSIn Stock: 2436IXTK60N50L2 Datasheet
IXTK60N50L2
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Key Parameters

Parameter APT5010LVRG IXTK60N50L2
Manufacturer Microchip Technology IXYS
Category Transistors, FETs, MOSFETs Transistors, FETs, MOSFETs
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 47A (Tc) 60A (Tc)
Rds On (Max) @ Id, Vgs 100mOhm @ 500mA, 10V 100mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 2.5mA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 470 nC @ 10 V 610 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 8900 pF @ 25 V 24000 pF @ 25 V
Mounting Type Through Hole Through Hole
Supplier Device Package TO-264 [L] TO-264 (IXTK)
Package / Case TO-264-3, TO-264AA TO-264-3, TO-264AA
RoHS Status ROHS3 Compliant ROHS3 Compliant
MSL 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected
ECCN EAR99 EAR99
Inventory 1294 Pcs 2400 Pcs

Substitute Part Grouping Explanation

Substitute parts for the APT5010LVRG are selected based strictly on the following parameters: FET type (N-Channel), technology (MOSFET), drain to source voltage (500 V), continuous drain current, Rds On at equivalent gate and drain conditions, gate threshold voltage, package compatibility (TO-264-3, TO-264AA, through-hole mounting), and compliance standards (RoHS3, REACH, ECCN). Only parts matching these characteristics are included as substitutes.

Parameter Comparison

Parameter APT5010LVRG IXTK60N50L2
FET Type N-Channel N-Channel
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 47A (Tc) 60A (Tc)
Rds On (Max) @ Id, Vgs 100mOhm @ 500mA, 10V 100mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 2.5mA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 470 nC @ 10 V 610 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 8900 pF @ 25 V 24000 pF @ 25 V
Mounting Type Through Hole Through Hole
Package / Case TO-264-3, TO-264AA TO-264-3, TO-264AA
RoHS Status ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected
ECCN EAR99 EAR99

Engineering Selection Recommendations

Both APT5010LVRG and IXTK60N50L2 are active status products, compliant with ROHS3 and REACH, and are classified under ECCN EAR99. Inventory status for both parts indicates availability in new original condition. Package compatibility conforms to TO-264-3, TO-264AA with through-hole mounting, supporting direct mechanical interchange.

Frequently Asked Questions (FAQ)

Q1: What determines if IXTK60N50L2 can substitute APT5010LVRG?
A1: Substitute selection is based strictly on N-Channel MOSFET type, 500 V drain to source voltage, equivalent package (TO-264-3, TO-264AA), and regulatory compliance (ROHS3, REACH, ECCN EAR99).

Q2: Do both parts share the same mounting and package form?
A2: Yes. Both APT5010LVRG and IXTK60N50L2 utilize through-hole mounting and TO-264-3, TO-264AA packages.

Q3: Are the substitute parts RoHS and REACH compliant?
A3: Yes. Both parts are ROHS3 compliant and REACH unaffected.

Q4: Is the continuous drain current (Id) higher for the substitute part?
A4: Yes. IXTK60N50L2 provides 60A (Tc) compared to 47A (Tc) for APT5010LVRG under the defined conditions.

Q5: Can both parts be used in the same mechanical socket or PCB footprint?
A5: Yes. The identical package and mounting type allow direct interchange within the allowed constraints.

Q6: What electrical parameters must match for substitution?
A6: N-Channel FET type, MOSFET technology, drain to source voltage rating, Rds On at defined conditions, gate threshold voltage, gate charge, input capacitance, and package compatibility are the relevant parameters.

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