APT5010JVR Equivalent & Substitute Parts

Part Overview

The APT5010JVR is an N-Channel MOSFET manufactured by Microchip Technology, rated for 500V drain-to-source voltage with 44A continuous drain current at 25°C. This device is housed in an ISOTOP® chassis mount package and is classified as Active product status with full RoHS3 compliance. The APT5010JVR belongs to the POWER MOS V® series and is suitable for high-voltage switching applications requiring robust thermal management through chassis mounting.

Equivalent and substitute parts are identified based on matching or exceeding the critical electrical parameters: drain-to-source voltage rating, continuous drain current capability, on-state resistance characteristics, and compatible packaging form factors. Substitutes must maintain compatibility with the ISOTOP® or equivalent miniBLOC package footprint and thermal performance requirements.

Substiute Parts

APT5010JVR

Microchip TechnologyIn Stock: 942APT5010JVR Datasheet

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IXTN60N50L2

IXYSIn Stock: 68739IXTN60N50L2 Datasheet

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STE53NC50

STMicroelectronicsIn Stock: 3551STE53NC50 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the APT5010JVR are qualified based on the following critical parameters:

Voltage Rating Compatibility: All substitute parts must maintain a minimum drain-to-source voltage (Vdss) rating of 500V to ensure safe operation in the intended application circuit.

Current Capability: Substitute parts must provide continuous drain current (Id) at 25°C equal to or greater than 44A (Tc) to support the same or higher load requirements without thermal derating.

On-State Resistance (Rds On): The maximum on-state resistance must not exceed the specified value at the rated gate-source voltage (10V) to maintain acceptable power dissipation and thermal performance.

Package Compatibility: Substitute parts must use ISOTOP® or equivalent miniBLOC chassis mount packages (SOT-227-4) to ensure mechanical and thermal interface compatibility with existing PCB designs and heat sink assemblies.

Compliance and Status: All substitute parts must maintain Active product status and RoHS3 compliance to ensure long-term availability and regulatory conformance.

The following parts meet these substitution criteria:

IXTN60N50L2 (IXYS): 500V, 53A continuous drain current, 100 mOhm Rds On, SOT-227B package STE53NC50 (STMicroelectronics): 500V, 53A continuous drain current, 80 mOhm Rds On, ISOTOP® package

Parameter Comparison

Engineering Selection Recommendations

APT5010JVR (Primary Part): This Microchip Technology MOSFET is the original specification component. It provides 44A continuous drain current with 100 mOhm on-state resistance in an ISOTOP® package. The part is Active status with full RoHS3 compliance and unlimited moisture sensitivity level (MSL 1). Current inventory availability is 881 pieces.

IXTN60N50L2 (Substitute - Higher Current Capability): The IXYS Linear L2™ series device offers 53A continuous drain current, representing a 20% increase over the APT5010JVR. This part maintains the same 500V voltage rating and 100 mOhm on-state resistance specification. The SOT-227B package is mechanically and thermally compatible with ISOTOP® miniBLOC footprints. Gate charge is higher at 610 nC, and input capacitance is significantly higher at 24000 pF, which may affect switching speed in gate-drive-limited applications. Product status is Active with RoHS3 compliance. Inventory availability is 68656 pieces.

STE53NC50 (Substitute - Optimized Performance): The STMicroelectronics PowerMESH™ II device provides 53A continuous drain current with superior on-state resistance of 80 mOhm at 27A, representing a 20% improvement over the APT5010JVR specification. This part maintains 500V voltage rating and ISOTOP® package compatibility. Gate charge is lower at 434 nC, and input capacitance is 11200 pF, offering faster switching characteristics than the IXTN60N50L2. Product status is Active with RoHS3 compliance. Inventory availability is 3500 pieces.

All three parts are suitable for direct substitution in 500V applications requiring 44A or greater continuous drain current with chassis mount thermal management. Selection between substitutes depends on specific application requirements for switching speed, gate drive capability, and thermal performance.

Frequently Asked Questions (FAQ)

Q: Can the IXTN60N50L2 be used as a direct replacement for the APT5010JVR?

A: The IXTN60N50L2 is electrically compatible as a substitute. Both devices share the same 500V voltage rating, 100 mOhm on-state resistance specification, and chassis mount package form factor. The IXTN60N50L2 provides higher continuous drain current (53A vs. 44A). However, the higher gate charge (610 nC vs. 470 nC) and input capacitance (24000 pF vs. 8900 pF) may require gate driver adjustment in applications with limited drive capability.

Q: What is the difference between the STE53NC50 and IXTN60N50L2?

A: Both devices provide 53A continuous drain current at 500V. The STE53NC50 offers lower on-state resistance (80 mOhm vs. 100 mOhm), lower gate charge (434 nC vs. 610 nC), and lower input capacitance (11200 pF vs. 24000 pF). The STE53NC50 uses an ISOTOP® package identical to the APT5010JVR, while the IXTN60N50L2 uses SOT-227B. The STE53NC50 provides faster switching performance and lower gate drive requirements.

Q: Are the ISOTOP® and SOT-227B packages mechanically interchangeable?

A: Both ISOTOP® and SOT-227B are miniBLOC chassis mount packages with identical pin configurations and thermal interface requirements. They are mechanically and thermally interchangeable on standard PCB layouts and heat sink assemblies designed for SOT-227-4 packages.

Q: What is the impact of higher gate charge on circuit performance?

A: Gate charge (Qg) determines the total charge required to switch the MOSFET from off to on state. Higher gate charge requires longer switching time or higher gate drive current. The IXTN60N50L2 (610 nC) requires approximately 30% more gate charge than the APT5010JVR (470 nC). Applications with current-limited gate drivers may experience slower switching transitions, potentially increasing switching losses.

Q: Which substitute part offers the best thermal performance?

A: The STE53NC50 provides the lowest on-state resistance (80 mOhm) at the specified gate voltage, resulting in lower conduction losses and reduced thermal dissipation compared to both the APT5010JVR (100 mOhm) and IXTN60N50L2 (100 mOhm). Lower on-state resistance directly reduces power dissipation in high-current applications.

Q: Are all three parts RoHS3 compliant?

A: Yes. The APT5010JVR, IXTN60N50L2, and STE53NC50 are all RoHS3 compliant with REACH Unaffected status. All parts carry unlimited moisture sensitivity level (MSL 1) and are classified as Active products with full manufacturing support.

Q: What is the minimum continuous drain current requirement for substitution?

A: Substitute parts must provide continuous drain current (Id) at 25°C equal to or greater than 44A (Tc) to support the same load requirements. Both the IXTN60N50L2 and STE53NC50 exceed this requirement at 53A, providing additional design margin.